New Deposition Processes for the Growth of Oxide and Nitride Thin Films PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download New Deposition Processes for the Growth of Oxide and Nitride Thin Films PDF full book. Access full book title New Deposition Processes for the Growth of Oxide and Nitride Thin Films by . Download full books in PDF and EPUB format.
Author: Publisher: ISBN: Category : Languages : en Pages : 12
Book Description
This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of this effort is to study the use of homoleptic metal amido compounds as precursors for chemical vapor deposition (CVD). The amides offer potential for the deposition of a variety of important materials at low temperatures. The establishment of these precursor compounds will enhance the ability to exploit the properties of advanced materials in numerous coatings applications. Experiments were performed to study the reactivity of Sn[NMe2]4 with oxygen. The data demonstrated that gas-phase insertion of oxygen into the Sn-N bond, leading to a reactive intermediate, plays an important role in tin oxide deposition. Several CVD processes for technologically important materials were developed using the amido precursor complexes. These included the plasma enhanced CVD of TiN and Zr3N4, and the thermal CVD of GaN and Al N. Quality films were obtained in each case, demonstrating the potential of the amido compounds as CVD precursors.
Author: Publisher: ISBN: Category : Languages : en Pages : 12
Book Description
This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of this effort is to study the use of homoleptic metal amido compounds as precursors for chemical vapor deposition (CVD). The amides offer potential for the deposition of a variety of important materials at low temperatures. The establishment of these precursor compounds will enhance the ability to exploit the properties of advanced materials in numerous coatings applications. Experiments were performed to study the reactivity of Sn[NMe2]4 with oxygen. The data demonstrated that gas-phase insertion of oxygen into the Sn-N bond, leading to a reactive intermediate, plays an important role in tin oxide deposition. Several CVD processes for technologically important materials were developed using the amido precursor complexes. These included the plasma enhanced CVD of TiN and Zr3N4, and the thermal CVD of GaN and Al N. Quality films were obtained in each case, demonstrating the potential of the amido compounds as CVD precursors.
Author: Werner Kern Publisher: Elsevier ISBN: 0080524214 Category : Technology & Engineering Languages : en Pages : 881
Book Description
This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. - Provides an all-new sequel to the 1978 classic, Thin Film Processes - Introduces new topics, and several key topics presented in the original volume are updated - Emphasizes practical applications of major thin film deposition and etching processes - Helps readers find the appropriate technology for a particular application
Author: Peter M. Martin Publisher: William Andrew ISBN: 0815520328 Category : Technology & Engineering Languages : en Pages : 932
Book Description
This 3e, edited by Peter M. Martin, PNNL 2005 Inventor of the Year, is an extensive update of the many improvements in deposition technologies, mechanisms, and applications. This long-awaited revision includes updated and new chapters on atomic layer deposition, cathodic arc deposition, sculpted thin films, polymer thin films and emerging technologies. Extensive material was added throughout the book, especially in the areas concerned with plasma-assisted vapor deposition processes and metallurgical coating applications.
Author: Tommi Kääriäinen Publisher: John Wiley & Sons ISBN: 1118062779 Category : Technology & Engineering Languages : en Pages : 274
Book Description
Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.
Author: Joy George Publisher: CRC Press ISBN: 9780849306518 Category : Technology & Engineering Languages : en Pages : 394
Book Description
"Preparation of Thin Films provides a comprehensive account of various deposition techniques for the preparation of thin films of elements, compounds, alloys, ceramics, and semiconductors - emphasizing inorganic compound thin films and discussing high vacuum and chemical deposition methods used for preparing high temperature superconducting oxide thin films. "
Author: Krishna Seshan Publisher: William Andrew ISBN: 0128123125 Category : Technology & Engineering Languages : en Pages : 472
Book Description
Handbook of Thin Film Deposition, Fourth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, materials for memory applications and methods for thin film optical processes. The book is broken up into three sections: scaling, equipment and processing, and applications. In this newly revised edition, the handbook will also explore the limits of thin film applications, most notably as they relate to applications in manufacturing, materials, design and reliability. - Offers a practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance, applications and the limitations faced by those processes - Covers core processes and applications in the semiconductor industry and new developments within the photovoltaic and optical thin film industries - Features a new chapter discussing Gates Dielectrics
Author: Rointan Framroze Bunshah Publisher: Cambridge University Press ISBN: 9780815513377 Category : Science Languages : en Pages : 894
Book Description
This second edition, edited by the world-renowned Dr. Rointain Bunshah, is an extensive update of the many improvements in deposition technologies, mechanisms, and applications. Considerably more material was added in Plasma Assisted Vapor Deposition processes, as well as Metallurgical Coating Applications.
Author: Krishna Seshan Publisher: CRC Press ISBN: 1482269686 Category : Science Languages : en Pages : 72
Book Description
The Handbook of Thin Film Deposition Techniques: Principles, Methods, Equipment and Applications, Second Edition explores the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition tec
Author: Ludvig Landälv Publisher: Linköping University Electronic Press ISBN: 9176850889 Category : Languages : en Pages : 42
Book Description
The state-of-the-art tools for machining metals are primarily based on a metal-ceramic composite (WC-Co) coated with different combinations of carbide, nitride, and oxide coatings. Combinations of these coating materials are optimized to withstand specific wear conditions. Oxide coatings, mainly α-Al2O3, are especially desired because of their high hot-hardness, chemical inertness with respect to the workpiece, and their low friction. The search for possible alloy elements, which may facilitate the deposition of such oxides by means of physical vapor deposition (PVD) techniques, has been the goal of this thesis. The sought alloy should form thermodynamically stable or metastable compounds, compatible with the temperature of use in metal cutting application. This thesis deals with process development and coating characterization of such new oxide alloy thin films, focusing on the Al-V-O, Al-Cr-Si-O, and Cr-Zr-O systems. Alloying aluminum oxide with iso-valent vanadium is a candidate for forming the desired alloys. Therefore, coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited with reactive sputter deposition. X-ray diffraction showed three different crystal structures depending on V-metal fraction in the coating: α-V2O3 rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, (63 - 42 at.% V), and a gamma-alumina-like solid solution at lower V-content, (18 and 7 at.%), were observed, the later was shifted to larger d-spacing compared to the pure γ-Al2O3 sample obtained if deposited with only Al-target. Annealing the Al-rich coatings in air resulted in formation of V2O5 crystals on the surface of the coating after annealing to 500 °C for 42 at.% V and 700 °C for 18 at.% V metal fraction respectively. The highest thermal stability was shown for pure γ-Al2O3-coating which transformed to α-Al2O3 after annealing to 1100° C. Highest hardness was observed for the Al-rich oxides, ~24 GPa. The hardness then decreases with increasing V-content, larger than 7 at.% V metal fraction. Doping the Al2O3 coating with 7 at.% V resulted in a significant surface smoothening compared to the binary oxide. The measured hardness after annealing in air decreased in conjunction with the onset of further oxidation of the coatings. This work increases the understanding of this complicated material system with respect to possible phases formed with pulsed DC magnetron sputtering deposition as well as their response to annealing in air. The inherent difficulties of depositing insulating oxide films with PVD, requiring a closed electrical circuit, makes the investigation of process stability an important part of this research. In this context, I investigated the influence of adding small amount of Si in Al-Cr cathode on the coating properties in a pulsed DC industrial cathodic arc system and the plasma characteristics, process parameters, and coating properties in a lab DC cathodic arc system. Si was chosen here due to a previous study showing improved erosion behavior of Al-Cr-Si over pure Al-Cr cathode without Si incorporation in the coating. The effect of Si in the Al-Cr cathode in the industrial cathodic arc system showed slight improvements on the cathode erosion but Si was found in all coatings where Si was added in the cathode. The Si addition promoted the formation of the B1-like metastable cubic oxide phase and the incorporation led to reduced or equal hardness values compared to the corresponding Si-free processes. The DC-arc plasma study on the same material system showed only small improvements in the cathode erosion and process stability (lower pressure and cathode voltage) when introducing 5 at.% Si in the Al70Cr30-cathode. The presence of volatile SiO species could be confirmed through plasma analysis, but the loss of Si through these species was negligible, since the coating composition matched the cathode composition also under these conditions. The positive effect of added Si on the process stability at the cathode surface, should be weighed against Si incorporation in the coating. This incorporation seems to lead to a reduction in mechanical properties in the as-deposited coatings and promote the formation of a B1-like cubic metastable oxide structure for the (Al,Cr)2O3 oxide. This formation may or may not be beneficial for the final application since literature indicates a slight stabilization of the metastable phase upon Si-incorporation, contrary to the effect of Cr, which stabilizes the α-phase. The thermal stability of alloys for metal cutting application is crucial for their use. Previous studies on another alloy system, Cr-Zr-O, had shown solid solution, for Cr-rich compositions in that material system, in the sought corundum structure. The thermal stability of α-Cr0.28Zr0.10O0.61 coating deposited by reactive radio frequency (RF)-magnetron sputtering at 500 °C was therefore investigated here after annealing in vacuum up to 870 °C. The annealed samples showed transformation of α-(Cr,Zr)2O3 and amorphous ZrOx-rich areas into tetragonal ZrO2 and bcc-Cr. The instability of the α-(Cr,Zr)2O3 is surprising and possibly related to the annealing being done under vacuum, facilitating the loss of oxygen. Further in situ synchrotron XRD annealing studies on the α-Cr0.28Zr0.10O0.61 coating in air and in vacuum showed increased stability for the air annealed sample up to at least 975 °C, accompanied with a slight increase in ex-situ measured nanohardness. The onset temperature for formation of tetragonal ZrO2 was similar to that for isothermally vacuum annealing. The synchrotron-vacuum annealed coating again decomposed into bcc-Cr and t-ZrO2, with an addition of monoclinic–ZrO2 due to grain growth. The stabilization of the room temperature metastable tetragonal ZrO2 phase, due to surface energy effects present with small grains sizes, may prove to be useful for metal cutting applications. The observed phase segregation of α-(Cr,Zr)2O3 and formation of tetragonal ZrO2 with corresponding increase in hardness for this pseudobinary oxide system also opens up design routes for pseudobinary oxides with tunable microstructural and mechanical properties.
Author: Klaus K. Schuegraf Publisher: William Andrew ISBN: Category : Technology & Engineering Languages : en Pages : 440
Book Description
The most recent developments and techniques in thin film deposition for high technology applications are described by 23 authorities in the field.
Author: 
Author: 
Author: Werner Kern
Author: Peter M. Martin
Author: Tommi Kääriäinen
Author: Joy George
Author: Krishna Seshan
Author: Rointan Framroze Bunshah
Author: Krishna Seshan
Author: Ludvig Landälv
Author: Klaus K. Schuegraf