Author: L. B. Rothman
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 288
Book Description
Proceedings of the Symposium on Multilevel Metallization, Interconnection, and Contact Technologies
Author: L. B. Rothman
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 288
Book Description
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 288
Book Description
Proceedings of the Symposia on Reliability of Semiconductor Devices and Interconnection and Multilevel Metallization, Interconnection, and Contact Technologies
Author: Harzara S. Rathore
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 516
Book Description
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 516
Book Description
Handbook of Semiconductor Interconnection Technology
Author: Geraldine Cogin Shwartz
Publisher: CRC Press
ISBN: 1420017659
Category : Technology & Engineering
Languages : en
Pages : 533
Book Description
First introduced about a decade ago, the first edition of the Handbook of Semiconductor Interconnection Technology became widely popular for its thorough, integrated treatment of interconnect technologies and its forward-looking perspective. The field has grown tremendously in the interim and many of the "likely directions" outlined in the first ed
Publisher: CRC Press
ISBN: 1420017659
Category : Technology & Engineering
Languages : en
Pages : 533
Book Description
First introduced about a decade ago, the first edition of the Handbook of Semiconductor Interconnection Technology became widely popular for its thorough, integrated treatment of interconnect technologies and its forward-looking perspective. The field has grown tremendously in the interim and many of the "likely directions" outlined in the first ed
ULSI Science and Technology/1987
Author: S. Broydo
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 874
Book Description
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 874
Book Description
Guidebook for Managing Silicon Chip Reliability
Author: Michael Pecht
Publisher: CRC Press
ISBN: 1351443577
Category : Technology & Engineering
Languages : en
Pages : 224
Book Description
Achieving cost-effective performance over time requires an organized, disciplined, and time-phased approach to product design, development, qualification, manufacture, and in-service management. Guidebook for Managing Silicon Chip Reliability examines the principal failure mechanisms associated with modern integrated circuits and describes common practices used to resolve them. This quick reference on semiconductor reliability addresses the key question: How will the understanding of failure mechanisms affect the future? Chapters discuss: failure sites, operational loads, and failure mechanism intrinsic device sensitivities electromigration hot carrier aging time dependent dielectric breakdown mechanical stress induced migration alpha particle sensitivity electrostatic discharge (ESD) and electrical overstress latch-up qualification screening guidelines for designing reliability Guidebook for Managing Silicon Chip Reliability focuses on device failure and causes throughout - providing a thorough framework on how to model the mechanism, test for defects, and avoid and manage damage. It will serve as an exceptional resource for electrical engineers as well as mechanical engineers working in the field of electronic packaging.
Publisher: CRC Press
ISBN: 1351443577
Category : Technology & Engineering
Languages : en
Pages : 224
Book Description
Achieving cost-effective performance over time requires an organized, disciplined, and time-phased approach to product design, development, qualification, manufacture, and in-service management. Guidebook for Managing Silicon Chip Reliability examines the principal failure mechanisms associated with modern integrated circuits and describes common practices used to resolve them. This quick reference on semiconductor reliability addresses the key question: How will the understanding of failure mechanisms affect the future? Chapters discuss: failure sites, operational loads, and failure mechanism intrinsic device sensitivities electromigration hot carrier aging time dependent dielectric breakdown mechanical stress induced migration alpha particle sensitivity electrostatic discharge (ESD) and electrical overstress latch-up qualification screening guidelines for designing reliability Guidebook for Managing Silicon Chip Reliability focuses on device failure and causes throughout - providing a thorough framework on how to model the mechanism, test for defects, and avoid and manage damage. It will serve as an exceptional resource for electrical engineers as well as mechanical engineers working in the field of electronic packaging.
Corrosion Mechanisms in Theory and Practice, Third Edition
Author: Philippe Marcus
Publisher: CRC Press
ISBN: 1420094629
Category : Mathematics
Languages : en
Pages : 944
Book Description
Updated to include recent results from intensive worldwide research efforts in materials science, surface science, and corrosion science, Corrosion Mechanisms in Theory and Practice, Third Edition explores the latest advances in corrosion and protection mechanisms. It presents a detailed account of the chemical and electrochemical surface reactions that govern corrosion as well as the link between microscopic forces and macroscopic behavior. Revised and expanded, this edition includes four new chapters on corrosion fundamentals, the passivity of metals, high temperature corrosion, and the corrosion of aluminum alloys. The first half of the book covers basic aspects of corrosion, such as entry of hydrogen into metals, anodic dissolution, localized corrosion, stress corrosion cracking, and corrosion fatigue. Connecting the theoretical aspects of corrosion mechanisms to practical applications in industry, the second half of the text discusses corrosion inhibition, atmospheric corrosion, microbially induced corrosion, corrosion in nuclear systems, corrosion of microelectronic and magnetic data-storage devices, and organic coatings. With contributions from leading academic and industrial researchers, this bestselling book continues to provide a thorough understanding of corrosion mechanisms—helping you solve existing corrosion challenges and prevent future problems.
Publisher: CRC Press
ISBN: 1420094629
Category : Mathematics
Languages : en
Pages : 944
Book Description
Updated to include recent results from intensive worldwide research efforts in materials science, surface science, and corrosion science, Corrosion Mechanisms in Theory and Practice, Third Edition explores the latest advances in corrosion and protection mechanisms. It presents a detailed account of the chemical and electrochemical surface reactions that govern corrosion as well as the link between microscopic forces and macroscopic behavior. Revised and expanded, this edition includes four new chapters on corrosion fundamentals, the passivity of metals, high temperature corrosion, and the corrosion of aluminum alloys. The first half of the book covers basic aspects of corrosion, such as entry of hydrogen into metals, anodic dissolution, localized corrosion, stress corrosion cracking, and corrosion fatigue. Connecting the theoretical aspects of corrosion mechanisms to practical applications in industry, the second half of the text discusses corrosion inhibition, atmospheric corrosion, microbially induced corrosion, corrosion in nuclear systems, corrosion of microelectronic and magnetic data-storage devices, and organic coatings. With contributions from leading academic and industrial researchers, this bestselling book continues to provide a thorough understanding of corrosion mechanisms—helping you solve existing corrosion challenges and prevent future problems.
Proceedings of the Symposia on Reliability of Semiconductor Devices/interconnections and Dielectric Breakdown, and Laser Process for Microelectronic Applications
Author: Electrochemical Society. Dielectric Science and Technology Division
Publisher: The Electrochemical Society
ISBN: 9781566770033
Category : Technology & Engineering
Languages : en
Pages : 346
Book Description
Papers in this volume are from the 180th ECS Meeting, held in held in Phoenix, Arizona, Fall 1991. This symposium addresses all aspects of reliability of semiconductor devices, multilevel interconnection and dielectric breakdown in VLSI and ULSI technologies. The symposium establishes reliability from design through manufacturing. The second part of the symposium addresses laser ablation/etching, laser planarization laser/UV. CVD of metal end dielectric films, laser/UV enhanced etching and deposition processesing liquid phase, and photomodification of surfaces.
Publisher: The Electrochemical Society
ISBN: 9781566770033
Category : Technology & Engineering
Languages : en
Pages : 346
Book Description
Papers in this volume are from the 180th ECS Meeting, held in held in Phoenix, Arizona, Fall 1991. This symposium addresses all aspects of reliability of semiconductor devices, multilevel interconnection and dielectric breakdown in VLSI and ULSI technologies. The symposium establishes reliability from design through manufacturing. The second part of the symposium addresses laser ablation/etching, laser planarization laser/UV. CVD of metal end dielectric films, laser/UV enhanced etching and deposition processesing liquid phase, and photomodification of surfaces.
Reduced Thermal Processing for ULSI
Author: R.A. Levy
Publisher: Springer Science & Business Media
ISBN: 1461305411
Category : Science
Languages : en
Pages : 444
Book Description
As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.
Publisher: Springer Science & Business Media
ISBN: 1461305411
Category : Science
Languages : en
Pages : 444
Book Description
As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.
Multilevel Interconnect Technology
Author: Gopal K. Rao
Publisher: McGraw-Hill Companies
ISBN:
Category : Computers
Languages : en
Pages : 250
Book Description
The first book on a key topic in IC technology. Table of Contents: Multilevel Interconnection Design; Multilevel Interconnect Processing; Manufacturing; Reliability; Index. 100 illustrations.
Publisher: McGraw-Hill Companies
ISBN:
Category : Computers
Languages : en
Pages : 250
Book Description
The first book on a key topic in IC technology. Table of Contents: Multilevel Interconnection Design; Multilevel Interconnect Processing; Manufacturing; Reliability; Index. 100 illustrations.
Rapid Thermal Processing
Author: Richard B. Fair
Publisher: Academic Press
ISBN: 0323139809
Category : Technology & Engineering
Languages : en
Pages : 441
Book Description
This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other processing approaches also make this book useful for supplemental information on silicon processing, VLSI processing, and integrated circuit engineering.
Publisher: Academic Press
ISBN: 0323139809
Category : Technology & Engineering
Languages : en
Pages : 441
Book Description
This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other processing approaches also make this book useful for supplemental information on silicon processing, VLSI processing, and integrated circuit engineering.