Author: Sunil Bhaskar PhatakPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 270
Book Description
Morphology and Purity of Epitaxial Indium Phosphide Grown by Liquid Phase Epitaxy
Author: Sunil Bhaskar PhatakPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 270
Book Description
Iron Doped High Purity Liquid Phase Epitaxial Indium Phosphide
Author: R. J. MalikPublisher:
ISBN:
Category : Indium phosphide
Languages : en
Pages : 214
Book Description
Investigation of Solution Epitaxial Growth and High-Field Electronic Properties of Indium Phosphide
Author: Lester F. EastmanPublisher:
ISBN:
Category :
Languages : en
Pages : 8
Book Description
This investigation covers an effort directed at the problem of obtaining Indium phosphide, by liquid phase epitaxy, for use in high-electric-field applications such as in microwave electron devices. It covers the area of determining the growth rate, the area of obtaining high purity, the area of alloyed contacts, and the determination of high-field properties. It is concluded that multiple-layer InP can be grown predictably and repeatably by liquid phase epitaxy using a multiple-well boat with the substrate on the bottom of the melt. It is also concluded that the density of total ionized impurities is the major remaining problem preventing the use of liquid phase epitaxial InP in microwave device applications. It also appears that carbon, as well as silicon, may contribute substantially to this impurity density.
Scientific and Technical Aerospace Reports
Author: Development of a Liquid Phase Epitaxial Growth System for Fabrication of Indium Phosphide Based Devices
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 50
Book Description
We have developed a liquid phase epitaxy system for growth of thin- film, III-V materials. We have focused primarily on InP, InGaAs, and InGaAsP growth for fabricating electro-optical devices. We have developed a standard approach for each type of growth and diagnostic techniques for characterization purposes.
Liquid Phase Epitaxy of Indium Phosphide
Author: Varley Lawson WrickPublisher:
ISBN:
Category : Phosphides
Languages : en
Pages : 276
Book Description
Research in Progress
Author: High Purity InP Grown by the Vapor Phase Epitaxy - Hydride Method
Author: Thomas E. ErstfeldPublisher:
ISBN:
Category :
Languages : en
Pages : 22
Book Description
A procedure was devised for the growing of high purity InP by the vapor phase epitaxy (VPE)-hydride method. A continuous in situ each with HCl of the InP substrate and the epitaxial layer under growth was developed in the VPE-hydride reactor. A study of the effect of the continuous in situ etch of HCl on the growth rates and properties of epitaxial layers prepared by the vapor phase epitaxy-hydride technique is reported. Growth rates were determined as a function of the following variables. HCl flow rates in the mixing and source zones, PH3 flow rates, and mixing zone temperatures. Epitaxial InP structures with good morphology were obtained when the continuous HCl etch was varied between 0.8 and 1.5 cc/min. The average values (77 K) of the carrier concentrations and mobilities were 1.3 x 10 to the 15th powre/cc and 23,000 sq cm/V/sec, respectively. The study indicates that the continuous in situ HCl etch improves the quality of the epitaxial InP layers.
Epitaxial Crystal Growth
Author: E. LendvayPublisher: Trans Tech Publications Ltd
ISBN: 3035739757
Category : Technology & Engineering
Languages : en
Pages : 979
Book Description
Proceedings of the 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1990
Crystal Growth Bibliography
Author: Publisher: Springer Nature
ISBN: 1461596181
Category :
Languages : en
Pages : 270
Book Description