Author: Jukka VarrioPublisher:
ISBN: 9789517216746
Category :
Languages : en
Pages : 36
Book Description
Molecular Beam Epitaxy of Gallium Arsenide on Silicon
Author: Jukka VarrioPublisher:
ISBN: 9789517216746
Category :
Languages : en
Pages : 36
Book Description
Molecular Beam Epitaxial Growth of Gallium Arsenide on Silicon
Author: Gordon Orvis MunnsStudies of the Nucleation and Growth of Gallium Arsenide on Silicon by Molecular Beam Epitaxy
Author: Stephanie Maxine KochPublisher:
ISBN:
Category :
Languages : en
Pages : 192
Book Description
The Molecular Beam Epitaxial Growth and Characterization of Gallium Arsenide on Silicon
Author: David Andrew WoolfStudies of the Structural Defects in Gallium Arsenide on Silicon Grown by Molecular Beam Epitaxy
Author: Sam-Dong KimThe Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates
Author: David Ian WestwoodSilicon-Molecular Beam Epitaxy
Author: E. KasperPublisher: CRC Press
ISBN: 1351085069
Category : Technology & Engineering
Languages : en
Pages : 260
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Gallium Arsenide and Aluminum Gallium Arsenide on Germanium and Silicon Substrates Grown by Molecular Beam Epitaxy for Device Applications
Author: Timothy Scott HendersonPublisher:
ISBN:
Category :
Languages : en
Pages : 90
Book Description
Demand Bibliography
Author: Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 44
Book Description
Molecular Beam Epitaxy
Author: Mohamed HeniniPublisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community