Author: Gordon Orvis MunnsPublisher:
ISBN:
Category :
Languages : en
Pages : 148
Book Description
Molecular Beam Epitaxial Growth of Gallium Arsenide on Silicon
Author: Gordon Orvis MunnsThe Molecular Beam Epitaxial Growth and Characterization of Gallium Arsenide on Silicon
Author: David Andrew WoolfThe Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates
Author: David Ian WestwoodStudies of the Nucleation and Growth of Gallium Arsenide on Silicon by Molecular Beam Epitaxy
Author: Stephanie Maxine KochPublisher:
ISBN:
Category :
Languages : en
Pages : 192
Book Description
Molecular Beam Epitaxy of Gallium Arsenide on Silicon
Author: Jukka VarrioPublisher:
ISBN: 9789517216746
Category :
Languages : en
Pages : 36
Book Description
Silicon Molecular Beam Epitaxy
Author: E. KasperPublisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Molecular Beam Epitaxial (MBE) Growth of Gallium Arsenide and Gallium Aluminum Arsenide
Author: Helmut KanterPublisher:
ISBN:
Category :
Languages : en
Pages : 27
Book Description
The construction and operation of a molecular beam epitaxial (MBE) system for promoting the epitaxial growth of gallium arsenide (GaAs) and gallium aluminum arsenide (FaAlAs) materials is described. These materials are studied in support of development of GaAs-based microwave and millimeter-wave devices as well as fast integrated digital circuits.
Demand Bibliography
Author: Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 44
Book Description
The Molecular Beam Epitaxial Growth of High Quality GaAs-A1GaAs Heterostructures for Microwave Device Applications
Author: Paul A. MakiPublisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 626
Book Description
Author: Sam-Dong Kim