Modeling, Design, Fabrication, and Characterization of the Insulated Gate Bipolar Transistor (IGBT) with Integrated Current Sensors PDF Download

Author: Cheng Shen
Publisher:
ISBN:
Category :
Languages : en
Pages : 138

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Author: Lin Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 45

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Author: B. Jayant Baliga
Publisher: William Andrew
ISBN: 1455731536
Category : Technology & Engineering
Languages : en
Pages : 733

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Book Description
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.

Author: Vinod Kumar Khanna
Publisher: John Wiley & Sons
ISBN: 047166099X
Category : Technology & Engineering
Languages : en
Pages : 648

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A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Author: B. Jayant Baliga
Publisher: Elsevier
ISBN: 0323917143
Category : Technology & Engineering
Languages : en
Pages : 802

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Book Description
The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor, Second Edition provides the essential information needed by applications engineers to design new products using the device in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The IGBT device has proven to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasoline powered motor vehicles and energy-saving compact fluorescent light bulbs. The book presents recent applications in plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage, but it is also used in all renewable energy generation systems, including solar and wind power. This book is the first available on the applications of the IGBT. It will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical and design engineers, as well as an important publication for semiconductor specialists. - Presents essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors - Teaches the methodology for the design of IGBT chips, including edge terminations, cell topologies, gate layouts, and integrated current sensors - Covers applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion - Written by the inventor of the device, this is the first book to highlight the key role of the IGBT in enabling electric vehicles and renewable energy systems with global impacts on climate change

Author: Farah P. Vandrevala
Publisher:
ISBN:
Category :
Languages : en
Pages :

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The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up in which, changes in the threshold voltage and the on-state voltage of the device may ultimately lead to loss of switching control. Since IGBTs are typically operated at high voltages and currents, the datasheets do not provide information on the static characteristics of the device for voltages close to the threshold, which is a useful region for understanding the underlying device physics. In this thesis a simplified IGBT model is presented that attempts to provide a magnified view of the static characteristics close to the threshold voltage. The model is developed based on the device structure and is optimized to fit the measured characteristics in the near-threshold voltage range.

Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 800

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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1572

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Author: Sibaprasad Chakrabarti
Publisher:
ISBN:
Category :
Languages : en
Pages : 284

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Author: Allen Ray Hefner
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 336

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