Microwave Plasma CVD of Silicon Nanocrystalline and Amorphous Silicon as a Function of Deposition Conditions PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Microwave Plasma CVD of Silicon Nanocrystalline and Amorphous Silicon as a Function of Deposition Conditions PDF full book. Access full book title Microwave Plasma CVD of Silicon Nanocrystalline and Amorphous Silicon as a Function of Deposition Conditions by J. H. Jeung. Download full books in PDF and EPUB format.
Author: J. H. Jeung Publisher: ISBN: Category : Languages : en Pages : 6
Book Description
Using ECR-CVD (electron cyclotron resonance-chemical vapor deposition), we can make amorphous-silicon (a-Si) and nanocrystalline (nc-Si) thin films. We are looking forward to improve the photo/dark conductivity ratio (sigma(sub p)/sigma(sub d)) by measuring the photo and dark current-voltage (I-V). In the ECR deposition, there are several factors which we can control and adjust for improved results, such as the amounts of silane and argon, the vacuum, and the temperature of the substrate. These become the critical factors for ECR deposition in order to make better films. Input gases consist of Ar, 2%SiH4 in He and H2. In the process, SiH4 is decomposed into SiH(x). A residual gas analyzer (RGA) gives composition in the plasma. Because Ar possibly etches the substrate and Si is to be deposited, the best RGA signal is obtained with low Ar content. This work serves to correlate process conditions, RGA signals and electrical data. The best RGA signal occurs for 5 mTorr Ar, 60 mTorr SiH4:He, and power of 600 W. Best value of dark conductivity (Q sub d)) was 1.53 x 10(exp -9) S/cm and 1.58 x 10(exp 5) S/cm for photo conductivity (sigma (sub p)) High value of sigma(sub p) and low value of sigma(sub d) indicate material with fewer defects. Adding extra H2. improves the photo-conductivity (sigma(sub p)) Applications of these films are heterojunction solar cells and thin film transistors. The heterojunction solar cell had a structure of metal grid/500 deg. A of a Si:H/p-Si wafer/Ohmic contact. These cells gave an open circuit voltage (V) = 0.51(V) and short circuit current density (J(sub sc)) = 5.5 mA/sq cm under 50 mW/sq cm tungsten halogen lamp. Thin film transistors using nc-Si, with gate length/width (L/W) = 450/65 gave field effect mobility of 18 sq cm/V-s, and Ion/Ioff of 1.25 x 10(exp 5).
Author: J. H. Jeung Publisher: ISBN: Category : Languages : en Pages : 6
Book Description
Using ECR-CVD (electron cyclotron resonance-chemical vapor deposition), we can make amorphous-silicon (a-Si) and nanocrystalline (nc-Si) thin films. We are looking forward to improve the photo/dark conductivity ratio (sigma(sub p)/sigma(sub d)) by measuring the photo and dark current-voltage (I-V). In the ECR deposition, there are several factors which we can control and adjust for improved results, such as the amounts of silane and argon, the vacuum, and the temperature of the substrate. These become the critical factors for ECR deposition in order to make better films. Input gases consist of Ar, 2%SiH4 in He and H2. In the process, SiH4 is decomposed into SiH(x). A residual gas analyzer (RGA) gives composition in the plasma. Because Ar possibly etches the substrate and Si is to be deposited, the best RGA signal is obtained with low Ar content. This work serves to correlate process conditions, RGA signals and electrical data. The best RGA signal occurs for 5 mTorr Ar, 60 mTorr SiH4:He, and power of 600 W. Best value of dark conductivity (Q sub d)) was 1.53 x 10(exp -9) S/cm and 1.58 x 10(exp 5) S/cm for photo conductivity (sigma (sub p)) High value of sigma(sub p) and low value of sigma(sub d) indicate material with fewer defects. Adding extra H2. improves the photo-conductivity (sigma(sub p)) Applications of these films are heterojunction solar cells and thin film transistors. The heterojunction solar cell had a structure of metal grid/500 deg. A of a Si:H/p-Si wafer/Ohmic contact. These cells gave an open circuit voltage (V) = 0.51(V) and short circuit current density (J(sub sc)) = 5.5 mA/sq cm under 50 mW/sq cm tungsten halogen lamp. Thin film transistors using nc-Si, with gate length/width (L/W) = 450/65 gave field effect mobility of 18 sq cm/V-s, and Ion/Ioff of 1.25 x 10(exp 5).
Author: Pio Capezzuto Publisher: Elsevier ISBN: 0080539106 Category : Science Languages : en Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. - Focuses on the plasma chemistry of amorphous silicon-based materials - Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced - Features an international group of contributors - Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Author: Materials Research Society. Meeting Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 776
Book Description
This book celebrates 20 years of MRS symposia on the topic of amorphous silicon. Contributors showed that the simplified theories developed to explain the limited experimental information available in the early eighties have spurred more sophisticated experimentation - either refining the early understanding or making it irrelevant. The differences of opinion that continue to exist and emerge are probably the hallmark of the amazing vitality of this field. Applications range from 'mature' thin-film transistors, solar cells and image sensors, to the 'emerging' possibility of erbium-doped nanocrystalline silicon-based materials for lasers and amorphous silicon quantum dots for luminescent devices. The book discusses material characterization, growth processes and devices. Each chapter is further subdivided into sections that group papers around common themes. Topics include: nanomaterials; electronic structure; metastable effects; understanding of growth processes; laser-induced crystallization; metal-induced crystallization; other growth techniques; newer devices; solar cells and thin-film transistors.
Author: Giovanni Bruno Publisher: ISBN: 9780121379407 Category : Science Languages : en Pages : 324
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Author: Mayur S. Valipa Publisher: ISBN: 9780542484230 Category : Languages : en Pages : 662
Book Description
Hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) thin films grown by plasma-enhanced chemical vapor deposition from silane-containing discharges are widely used in electronic devices such as solar cells and flat-panel displays. The reactivities and mobilities of reactive species from the plasma, which impinge on the growth surface during film deposition or on the surface of the deposited film during its post-deposition treatment, determine the film properties such as crystallinity and surface roughness. These film properties, in turn, are crucial in determining the performance of the resulting optoelectronic or photovoltaic devices. Specifically, smooth, device-quality a-Si:H films are deposited under conditions where the dominant deposition precursor is the SiH3 radical. Furthermore, the exposure of a-Si:H films to H atoms from an H2 plasma leads to the deposition of nc-Si:H thin films.
Author: Materials Research Society. Meeting Publisher: ISBN: Category : Science Languages : en Pages : 824
Book Description
Amorphous silicon technology has been the subject of symposia every year since 1984. This remarkable longevity is due to the continuous emergence of new scientific questions and new technological challenges for silicon thin films. Earlier there was a strong emphasis on methods to achieve high deposition rates using plasma or hot-wire chemical vapor deposition, and on the properties and applications of nanocrystalline silicon films, which for example have been incorporated into stacked a-Si:H/nc-Si:H solar cells. The papers appearing in this book are sorted under six chapter headings on the basis of subject matter. Chapter I is concerned with amorphous network structures, electronic metastability, defects, and photoluminescence. Chapter II focuses on thin-film transistors and imager arrays. Chapter III covers solar cells. Chapter IV addresses growth mechanisms, hot-filament CVD, and nc-Si:H growth. Chapter V contains all remaining topics in film growth, especially those related to devices. Finally, Chapter VI focuses on crystallized film.
Author: J. H. Jeung
Author: J. H. Jeung
Author: Pio Capezzuto
Author: Basanth Jagannathan
Author: 
Author: Materials Research Society. Meeting
Author: Giovanni Bruno
Author: Mayur S. Valipa
Author: Sridhar Komarneni
Author: Materials Research Society. Meeting
Author: Thomas Zimmermann