Microstructures and Electrical Properties of SrRuO[sub 3] Thin Films on LaAlO[sub 3] Substrates PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Conductive SrRuO[sub 3] thin films have been deposited using pulsed laser deposition. Structure and microstructure of this system were studied using XRD, SEM, and scanning tunneling microscopy. Electrical properties of these films were measured. The film deposited at 250[degree]C is amorphous-like, showing semiconductor-like temperature dependence of electric conductivity. Film deposited at 425[degree]C is crystalline with very fine grain size (100 [approximately] 200[angstrom]), showing both metallic and semiconductor-like temperature dependence of the electrical conductivity. Film deposited at 775[degree]C shows reisistivity of 280 [mu][Omega][center-dot]cm at RT and resisdual resistivity ratio of 8.4. Optimized deposition conditions were determined. Possible engineering applications of SrRuO[sub 3] thin films are discussed. Bulk and surface electronic structures of SrRuO[sub 3] are calculated using a semi-empirical valence electron linear combination of atomic orbitals, and they are used to understand the electrical properties of the films.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Conductive SrRuO[sub 3] thin films have been deposited using pulsed laser deposition. Structure and microstructure of this system were studied using XRD, SEM, and scanning tunneling microscopy. Electrical properties of these films were measured. The film deposited at 250[degree]C is amorphous-like, showing semiconductor-like temperature dependence of electric conductivity. Film deposited at 425[degree]C is crystalline with very fine grain size (100 [approximately] 200[angstrom]), showing both metallic and semiconductor-like temperature dependence of the electrical conductivity. Film deposited at 775[degree]C shows reisistivity of 280 [mu][Omega][center-dot]cm at RT and resisdual resistivity ratio of 8.4. Optimized deposition conditions were determined. Possible engineering applications of SrRuO[sub 3] thin films are discussed. Bulk and surface electronic structures of SrRuO[sub 3] are calculated using a semi-empirical valence electron linear combination of atomic orbitals, and they are used to understand the electrical properties of the films.
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