Author: Thomas Robert OmsteadPublisher:
ISBN:
Category :
Languages : en
Pages : 358
Book Description
Metalorganic Chemical Vapor Deposition (MOCVD) of GaAs Using Organometallic Arsenic Precursors
Author: Thomas Robert OmsteadPublisher:
ISBN:
Category :
Languages : en
Pages : 358
Book Description
Low-pressure Metalorganic Chemical Vapor Deposition of GaAs on GaAs Substrate Using Triethylgallium and Solid Arsenic as Precursors
Author: Chao-Chi TongPublisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 182
Book Description
Gallium-arsenide Metalorganic Chemical Vapor Deposition with Alkyl Arsenic Sources
Author: Dietrich W. VookChemistry for Electronic Materials
Author: K.F. JensenPublisher: Elsevier
ISBN: 0444596909
Category : Science
Languages : en
Pages : 215
Book Description
The chemical aspects of materials processing used for electronic applications, e.g. Si, III-V compounds, superconductors, metallization materials, are covered in this volume. Significant recent advances have occurred in the development of new volatile precursors for the fabrication of III-V semiconductor and metal [Cu, W] films by OMCVD. Some fundamentally new and wide-ranging applications have been introduced in recent times. Experimental and modeling studies regarding deposition kinetics, operating conditions and transport as well as properties of films produced by PVD, CVD and PECVD are discussed. The thirty papers in this volume report on many other significant topics also. Research workers involved in these aspects of materials technology may find here some new perspectives with which to augment their projects.
Compound Semiconductors 1994, Proceedings of the Twenty-First INT Symposium on Compound Semiconductors held in San Diego, California, 18-22 September 1994
Author: Herb GoronkinPublisher: CRC Press
ISBN: 9780750302265
Category : Technology & Engineering
Languages : en
Pages : 946
Book Description
Compound Semiconductors 1994 provides a comprehensive overview of research and applications of gallium arsenide, indium phosphide, silicon carbide, and other compound semiconducting materials. Contributed by leading experts, the book discusses growth, characterization, processing techniques, device applications, high-power, high-temperature semiconductor devices, visible emitters and optoelectronic integrated circuits (OEICs), heterojunction transistors, nanoelectronics, and nanophotonics, and simulation and modeling. The book is an essential reference for researchers working on the fabrication of semiconductors, characterization of materials, and their applications for devices, such as lasers, photodiodes, sensors, and transistors, particularly in the high-speed telecommunications industries.
Organometallic Chemical Vapor Deposition of GaAs
Author: Peter Wai-Man LeeProceedings of the ... European Conference on Chemical Vapor Deposition
Author: Handbook of Crystal Growth
Author: Tom KuechPublisher: Elsevier
ISBN: 0444633057
Category : Science
Languages : en
Pages : 1384
Book Description
Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Scientific and Technical Aerospace Reports
Author: Dissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 796
Book Description