Author: Muhammad Abdul KhaliqPublisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 368
Book Description
Memory Quality Silicon Nitride Deposited by Plasma-enhanced Chemical Vapor Deposition
Author: Muhammad Abdul KhaliqPublisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 368
Book Description
Characteristics of Silicon Nitride Deposited by VHF (162 MHz)-plasma Enhanced Chemical Vapor Deposition Using a Multi-tile Push–pull Plasma Source
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Abstract: To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push–pull plasma source, SiN x layers were deposited with a gas mixture of NH3 /SiH4 with/without N2 and the characteristics of the plasma and the deposited SiN x film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push–pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N2 dissociation for an N2 plasma. When a SiN x layer was deposited with a mixture of NH3 /SiH4 with N2 at a low temperature of 100 °C, a stoichiometric amorphous Si3 N4 layer with very low Si–H bonding could be deposited. The 300 nm thick SiN x film exhibited a low water vapor transmission rate of 1.18 × 10 −4 g (m 2 · d) −1, in addition to an optical transmittance of higher than 90%.
Plasma-enhanced Chemical Vapor Deposition of Silicon Nitride from 1,1,3,3,5,5,-hexamethylcyclotrisilazane
Author: Todd Alan BrooksSynthesis and Characterization of Silicon Nitride Films Deposited by Plasma Enhanced Chemical Vapor Deposition Using Diethylsilane
Author: Yanyao YuPublisher:
ISBN:
Category : Diethysilane
Languages : en
Pages : 116
Book Description
Structural, Optical, and Mechanical Properties of Silicon Nitride Films Deposited by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition
Author: Ezgi AbacıoğluPlasma Enhanced Chemical Vapor Depostion of Fluorinated Silicon Nitride
Author: Rhett Eugene LivengoodPublisher:
ISBN:
Category :
Languages : en
Pages : 304
Book Description
Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Author: Vikram J. KapoorPublisher:
ISBN:
Category : Electric and insulation
Languages : en
Pages : 570
Book Description
Thermal and Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride Films
Author: Sui-Yuan LynnPublisher:
ISBN:
Category : Silicon nitride
Languages : en
Pages : 212
Book Description
Synthesis and Characterization of Silicon Nitride Film Deposited by Plasma Enhanced Chemical Vapor Deposition from Ditertiary-butyl Silane
Author: Kei-Turng ShihPublisher:
ISBN:
Category : Ditertiary-butyl silane
Languages : en
Pages : 158
Book Description
Modeling of Plasma-enhanced Chemical Vapor Deposited Silicon Nitride Thin Films Into Confined Geometries
Author: Ronald James SpencePublisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 460
Book Description