Memories That Shaped an Industry PDF Download

Author: Emerson W. Pugh
Publisher: MIT Press (MA)
ISBN: 9780262661676
Category : Computers
Languages : en
Pages : 336

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Author: Alice Mah
Publisher: University of Toronto Press
ISBN: 1442662905
Category : Social Science
Languages : en
Pages : 249

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Book Description
Abandoned factories, shipyards, warehouses, and refineries are features of many industrialized cities around the world. But despite their state of decline, these derelict sites remain vitally connected with the urban landscapes that surround them. In this enlightening new book, Alice Mah explores the experiences of urban decline and post-industrial change in three different community contexts: Niagara Falls, Canada/USA; Newcastle-upon-Tyne, UK; and Ivanovo, Russia. Employing a unique methodological approach that combines ethnographic, spatial, and documentary methods, Mah draws on international comparisons of the landscapes and legacies of industrial ruination over the past forty years. Through this, she foregrounds the complex challenges of living with prolonged uncertainty and deprivation amidst socioeconomic change. This rich comparative study makes an essential contribution to far-reaching debates about the decline of manufacturing, regeneration, and identity, and will have important implications for urban theory and policy.

Author: Nancy S. Dorfman
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 286

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Author: Emerson W. Pugh
Publisher:
ISBN:
Category : Computer industry
Languages : en
Pages :

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Author: Davide Nadali
Publisher: Bloomsbury Publishing
ISBN: 1474223982
Category : History
Languages : en
Pages : 202

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Book Description
Memory is a constructed system of references, in equilibrium, of feeling and rationality. Comparing ancient and contemporary mechanisms for the preservation of memories and the building of a common cultural, political and social memory, this volume aims to reveal the nature of memory, and explores the attitudes of ancient societies towards the creation of a memory to be handed down in words, pictures, and mental constructs. Since the multiple natures of memory involve every human activity, physical and intellectual, this volume promotes analyses and considerations about memory by focusing on various different cultural activities and productions of ancient Near Eastern societies, from artistic and visual documents to epigraphic evidence, and by considering archaeological data. The chapters of this volume analyse the value and function of memory within the ancient Near Eastern and Egyptian societies, combining archaeological, textual and iconographical evidence following a progression from the analysis of the creation and preservation of both single and multiple memories, to the material culture (things and objects) that shed light on the impact of memory on individuals and community.

Author: National Air and Space Museum
Publisher:
ISBN:
Category : Aeronautical museums
Languages : en
Pages : 264

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Author: Paulo Cappelletti
Publisher: Springer Science & Business Media
ISBN: 1461550157
Category : Technology & Engineering
Languages : en
Pages : 544

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A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].

Author: Jun Jing
Publisher: Stanford University Press
ISBN: 0804764921
Category : History
Languages : en
Pages : 242

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Book Description
This study focuses on the politics of memory in the village of Dachuan in northwest China, in which 85 percent of the villagers are surnamed Kong and believe themselves to be descendants of Confucius. It recounts both how this proud community was subjected to intense suffering during the Maoist era, culminating in its forcible resettlement in December 1960 to make way for the construction of a major hydroelectric dam, and how the village eventually sought recovery through the commemoration of that suffering and the revival of a redefined religion. Before 1949, the Kongs had dominated their area because of their political influence, wealth, and, above all, their identification with Confucius, whose precepts underlay so much of the Chinese ethical and political tradition. After the Communists came to power in 1949, these people, as a literal embodiment of the Confucian heritage, became prime targets for Maoist political campaigns attacking the traditional order, from land reform to the “Criticize Confucius” movement. Many villagers were arrested, three were beheaded, and others died in labor camps. When the villagers were forced to hastily abandon their homes and the village temple, they had time to disinter only the bones of their closest family members; the tombs of earlier generations were destroyed by construction workers for the dam.

Author: Anthony Bebbington
Publisher: Oxford University Press
ISBN: 0198820933
Category : Business & Economics
Languages : en
Pages : 291

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Book Description
This book synthesizes findings regarding the political drivers of institutional change in extractive industry governance. It analyses resource governance from the late nineteenth century to the present in Bolivia, Ghana, Peru, and Zambia, focusing on the ways in which resource governance and national political settlements interact.

Author: Rino Micheloni
Publisher: Springer
ISBN: 9401775125
Category : Computers
Languages : en
Pages : 391

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Book Description
This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.