Author: Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 910
Book Description
Physics Briefs
Author: Bulletin of the Atomic Scientists
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 88
Book Description
The Bulletin of the Atomic Scientists is the premier public resource on scientific and technological developments that impact global security. Founded by Manhattan Project Scientists, the Bulletin's iconic "Doomsday Clock" stimulates solutions for a safer world.
Applied Mechanics Reviews
Author: Scientific and Technical Aerospace Reports
Author: Government Reports Announcements & Index
Author: Energy Research Abstracts
Author: An Overview of Heat Transfer Phenomena
Author: Salim Newaz KaziPublisher: IntechOpen
ISBN: 9789535108276
Category : Technology & Engineering
Languages : en
Pages : 540
Book Description
In the wake of energy crisis due to rapid growth of industries, urbanization, transportation, and human habit, the efficient transfer of heat could play a vital role in energy saving. Industries, household requirements, offices, transportation are all dependent on heat exchanging equipment. Considering these, the present book has incorporated different sections related to general aspects of heat transfer phenomena, convective heat transfer mode, boiling and condensation, heat transfer to two phase flow and heat transfer augmentation by different means.
Nuclear Science Abstracts
Author: International Aerospace Abstracts
Author: Semiconductor Material and Device Characterization
Author: Dieter K. SchroderPublisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.