Author: Kenneth P. Rodbell
Publisher: Cambridge University Press
ISBN: 9781107409484
Category : Technology & Engineering
Languages : en
Pages : 514
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Materials Reliability in Microelectronics III:
Author: Kenneth P. Rodbell
Publisher: Cambridge University Press
ISBN: 9781107409484
Category : Technology & Engineering
Languages : en
Pages : 514
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher: Cambridge University Press
ISBN: 9781107409484
Category : Technology & Engineering
Languages : en
Pages : 514
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Materials Reliability in Microelectronics III: Volume 309
Author: Kenneth P. Rodbell
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 520
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 520
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Materials Reliability in Microelectronics
Materials Reliability in Microelectronics V: Volume 391
Author: Anthony S. Oates
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
Materials Reliability in Microelectronics VI: Volume 428
Author: William F. Filter
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 616
Book Description
MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 616
Book Description
MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.
Materials Aspects of X-Ray Lithography: Volume 306
Author: George K. Celler
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 320
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 320
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Electromigration in Metals
Author: Paul S. Ho
Publisher: Cambridge University Press
ISBN: 1107032385
Category : Science
Languages : en
Pages : 433
Book Description
Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
Publisher: Cambridge University Press
ISBN: 1107032385
Category : Science
Languages : en
Pages : 433
Book Description
Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
Materials Reliability in Microelectronics IX: Volume 563
Author: Cynthia A. Volkert
Publisher: Cambridge University Press
ISBN: 9781558994706
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
The continual evolution of integrated circuit architecture places ever-increasing demands on the metal and dielectric thin films used in fabricating these circuits. Not only must these materials meet performance and manufacturability requirements, they must also be highly reliable for many years under operating conditions. A thorough understanding of the failure mechanisms and the effect of processing conditions and material properties on reliability is required to achieve this, particularly if it is to be done while minimizing cost and maximizing performance. This book brings together researchers from academia and industry to discuss fundamental mechanisms and phenomena in the reliability field. Topics include: solder and barrier-layer reliability; electromigration modeling; electromigration in interconnects; advanced measurement techniques; mechanical behavior of back-end materials and adhesion and fracture.
Publisher: Cambridge University Press
ISBN: 9781558994706
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
The continual evolution of integrated circuit architecture places ever-increasing demands on the metal and dielectric thin films used in fabricating these circuits. Not only must these materials meet performance and manufacturability requirements, they must also be highly reliable for many years under operating conditions. A thorough understanding of the failure mechanisms and the effect of processing conditions and material properties on reliability is required to achieve this, particularly if it is to be done while minimizing cost and maximizing performance. This book brings together researchers from academia and industry to discuss fundamental mechanisms and phenomena in the reliability field. Topics include: solder and barrier-layer reliability; electromigration modeling; electromigration in interconnects; advanced measurement techniques; mechanical behavior of back-end materials and adhesion and fracture.
Materials Reliability in Microelectronics II:
Author: C. V. Thompson
Publisher: Cambridge University Press
ISBN: 9781107409682
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher: Cambridge University Press
ISBN: 9781107409682
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Diagnostic Techniques for Semiconductor Materials Processing: Volume 324
Author: O. J. Glembocki
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 536
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 536
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.