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Author: Eric Silkowski Publisher: ISBN: 9781423576570 Category : Gallium nitride Languages : en Pages : 330
Book Description
Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 10(exp 13) to 1 x 10 (exp 15)/sq cm. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature of 1000 deg C for 90 min. Annealing temperature was found to be the determining factor in implantation damage recovery. It was discovered that surface degradation occurred for annealing in an NH3 environment at temperatures above 1000 deg C. An optimal annealing temperature of 1000 deg C and an optimal annealing gas environment of NH3 were found for the optical activation of Zn, Mg, Er, and Nd. Several new luminescence features were observed for the various dopants. Zn- implanted GaN was found to have a strong luminescence peak in the blue at 2.86 eV. The energetic location and width of this luminescence peak was insensitive to temperature changes and excitation intensity changes. These properties suggested that an internal Zn center transition was responsible.
Author: Eric Silkowski Publisher: ISBN: 9781423576570 Category : Gallium nitride Languages : en Pages : 330
Book Description
Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 10(exp 13) to 1 x 10 (exp 15)/sq cm. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature of 1000 deg C for 90 min. Annealing temperature was found to be the determining factor in implantation damage recovery. It was discovered that surface degradation occurred for annealing in an NH3 environment at temperatures above 1000 deg C. An optimal annealing temperature of 1000 deg C and an optimal annealing gas environment of NH3 were found for the optical activation of Zn, Mg, Er, and Nd. Several new luminescence features were observed for the various dopants. Zn- implanted GaN was found to have a strong luminescence peak in the blue at 2.86 eV. The energetic location and width of this luminescence peak was insensitive to temperature changes and excitation intensity changes. These properties suggested that an internal Zn center transition was responsible.
Author: F. A. Ponce Publisher: ISBN: Category : Science Languages : en Pages : 1008
Book Description
This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
Author: Publisher: Academic Press ISBN: 0080864554 Category : Science Languages : en Pages : 509
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Author: N.S. Gajbhiye Publisher: Springer Science & Business Media ISBN: 354078697X Category : Science Languages : en Pages : 1282
Book Description
Disordered nature of structural arrangement in amorphous and nanocrystalline alloys gives rise to advantageous soft magnetic properties in particular from a practical application viewpoint [1]. Especially nanocrystalline alloys attract a lot of scienti?c interest because, contrary to their amorphous counterparts, their magnetic parameters do not substantially deteriorate at elevated temperatures during the process of their practical exploitation. To bene?t from their unique magnetic pr- erties, the mechanism of crystallization should be known. Here, we present the study of structural transformation of NANOPERM-type alloys by the help of Mössbauer spectrometry, conventional X-ray diffraction (XRD), and by an advanced diffraction of synchrotron radiation. 2 Experimental Alloys of the composition Fe Mo Cu B for x = 12, 15, 17, 20 prepared by 91?x 8 1 x 57 rapid quenching on a rotating wheel were analyzed in the as-cast state by Fe transmission Mössbauer spectrometry (TMS) and by conversion electron Mössbauer spectrometry (CEMS). The obtained as-quenched ribbons were about 10 mm wide and 20 ?m thick. The nanocrystalline state was achieved by annealing about 2 cm ? long samples for 1 h at temperatures up to 650 C in a vacuum. Conventional XRD was performed with Cu-K radiation in Bragg-Brentano con?guration with graphite ? monochromator in the diffracted beam. Monochromatic synchrotron radiation of 7keV(? = 0. 178 nm) provided at the KMC-2 beamline at BESSY Berlin was used for in situ examinations of structural transformations during continuous heat treatment.
Author: Eric Silkowski
Author: Eric Silkowski
Author: Walter M. Gibson
Author: F. A. Ponce
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Author: John Snyder Colton
Author: N.S. Gajbhiye
Author: H. Q. Hou
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