Low-temperature Solid-state Phase Transformations in 2H Silicon Carbide PDF Download
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Author: Herbert A. Will Publisher: ISBN: Category : Crystals at low temperatures Languages : en Pages : 44
Book Description
Single crystals of 2H SiC were observed to undergo phase transformations at temperatures as low as 400 C. Some 2H crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent and is greatly enhanced by dislocations. Observations indicate that the transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid state transformation above 1400 C.
Author: Herbert A. Will Publisher: ISBN: Category : Crystals at low temperatures Languages : en Pages : 44
Book Description
Single crystals of 2H SiC were observed to undergo phase transformations at temperatures as low as 400 C. Some 2H crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent and is greatly enhanced by dislocations. Observations indicate that the transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid state transformation above 1400 C.
Author: United States. Superintendent of Documents Publisher: ISBN: Category : Government publications Languages : en Pages : 1194
Book Description
February issue includes Appendix entitled Directory of United States Government periodicals and subscription publications; September issue includes List of depository libraries; June and December issues include semiannual index.
Author: Mahmud M. Rahman Publisher: Springer Science & Business Media ISBN: 3642750486 Category : Science Languages : en Pages : 238
Book Description
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Author: Herbert A. Will
Author: Herbert A. Will
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Author: United States. Superintendent of Documents
Author: 
Author: United States. Superintendent of Documents
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Author: 
Author: Herbert A. Will
Author: Mahmud M. Rahman
Author: Gregory Eugene Hilmas