Author: Scott Dwight Habermehl
Publisher:
ISBN:
Category :
Languages : en
Pages : 306
Book Description
Low Temperature Silicon Epitaxy by Remote, Plasma-enhanced Chemical Vapor Deposition
Author: Scott Dwight Habermehl
Publisher:
ISBN:
Category :
Languages : en
Pages : 306
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 306
Book Description
Low-temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition
Author: T. J. Donahue
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 22
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 22
Book Description
Low-temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition
Author: T. J. Donahue
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 17
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 17
Book Description
Demonstration of very low temperature (150C̊-400C̊) silicon homoepitaxy by remote plasma-enhanced chemical vapor deposition
Author: Louis Herbert Breaux
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 406
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 406
Book Description
Characterization of Low-temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition
Author: T. J. Donahue
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 29
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 29
Book Description
Low Temperature and Low Pressure Silicon Epitaxy by Plasma-Enhanced CVD
Author: R. Reif
Publisher:
ISBN:
Category : Autodoping
Languages : en
Pages : 3
Book Description
This paper reviews the most recent results obtained using a very low pressure, plasma enhanced chemical vapor deposition technique for low temperature (650-800°C) silicon epitaxy. Initial results on autodoping studies and on p-n junctions and MOS transistors fabricated in these films are briefly discussed.
Publisher:
ISBN:
Category : Autodoping
Languages : en
Pages : 3
Book Description
This paper reviews the most recent results obtained using a very low pressure, plasma enhanced chemical vapor deposition technique for low temperature (650-800°C) silicon epitaxy. Initial results on autodoping studies and on p-n junctions and MOS transistors fabricated in these films are briefly discussed.
Low temperature in situ clean and Si and Si[subscript 1-x] and Ge[subscript x] epitaxy by remote plasma-enhanced chemical vapor deposition
Author: Ting-Chen Hsu
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages : 258
Book Description
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages : 258
Book Description
Low Temperature Epitaxial Deposition of Silicon by Plasma Enhanced CVD (Chemical Vapor Deposition).
Author: L. R. Reif
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
A reactor system has been developed to deposit specular epitaxial silicon films at temperatures as low as 620 C using a low pressure chemical vapor deposition process both with and without plasma enhancement. This represents the lowest silicon epitaxial deposition temperature ever reported for a thermally driven chemical vapor deposition process. Experiments performed at 775 C indicate that the predeposition in-situ cleaning of the substrate surface is the critical step in determining whether epitaxial deposition will occur. Surface cleaning in these experiments was done by sputtering in an argon plasma ambient at the deposition temperature while applying a dc bias to the susceptor. This is the lowest pre-epitaxial cleaning temperature ever reported for a thermally driven chemical vapor deposition. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
A reactor system has been developed to deposit specular epitaxial silicon films at temperatures as low as 620 C using a low pressure chemical vapor deposition process both with and without plasma enhancement. This represents the lowest silicon epitaxial deposition temperature ever reported for a thermally driven chemical vapor deposition process. Experiments performed at 775 C indicate that the predeposition in-situ cleaning of the substrate surface is the critical step in determining whether epitaxial deposition will occur. Surface cleaning in these experiments was done by sputtering in an argon plasma ambient at the deposition temperature while applying a dc bias to the susceptor. This is the lowest pre-epitaxial cleaning temperature ever reported for a thermally driven chemical vapor deposition. (Author).
Characterization of Silicon Epitaxy Deposited by Plasma-enhanced Chemical Vapor Deposition at Low Temperatures and Very Low Pressures
Author: Linda Mason Garverick
Publisher:
ISBN:
Category :
Languages : en
Pages : 374
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 374
Book Description