Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
This document reports on the progress towards the growth of rare earth dope Si by low temperature plasma enhanced chemical vapor deposition (PECVD). The goal of this investigation is to develop a commercially compatible technique to deposit thick, high concentration, precipitation free, rare earth doped Si films. The low temperature growth technique used is plasma enhanced chemical vapor deposition with an electron cyclotron resonance(ECR) source. Low temperature processing is needed to avoid the formation of ErSi2 precipitates which are known to be optically inactive. Epitaxial Si films doped with varying concentrations of Er have been grown in this investigation at low substrate temperatures (
Low Temperature Epitaxial Growth of Rare Earth Doped Silicon and Silicon Germanium Alloys
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
This document reports on the progress towards the growth of rare earth dope Si by low temperature plasma enhanced chemical vapor deposition (PECVD). The goal of this investigation is to develop a commercially compatible technique to deposit thick, high concentration, precipitation free, rare earth doped Si films. The low temperature growth technique used is plasma enhanced chemical vapor deposition with an electron cyclotron resonance(ECR) source. Low temperature processing is needed to avoid the formation of ErSi2 precipitates which are known to be optically inactive. Epitaxial Si films doped with varying concentrations of Er have been grown in this investigation at low substrate temperatures (
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
This document reports on the progress towards the growth of rare earth dope Si by low temperature plasma enhanced chemical vapor deposition (PECVD). The goal of this investigation is to develop a commercially compatible technique to deposit thick, high concentration, precipitation free, rare earth doped Si films. The low temperature growth technique used is plasma enhanced chemical vapor deposition with an electron cyclotron resonance(ECR) source. Low temperature processing is needed to avoid the formation of ErSi2 precipitates which are known to be optically inactive. Epitaxial Si films doped with varying concentrations of Er have been grown in this investigation at low substrate temperatures (
Low Temperature Epitaxial Growth of Rare Earth Doped Si
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 22
Book Description
Epitaxial Si films doped with high concentrations (10(exp 19)/cu cm) of the rare earth element Er have been deposited. The deposition technique used was low temperature plasma enhanced chemical vapor deposition with an electron cyclotron resonance source. The deposition temperatures were below 500 deg C to avoid formation of erbium silicide which is optically inactive. The growth process for undoped samples was developed to the point that good quality epitaxial material could be obtained on demand. Some work was done investigating the concept of limited epitaxial thickness. Four different metal organic Er precursors were tried and the greatest success was found determine (bis trimethyl silyl amido) Er (III). A designed experiment was performed to the most important process conditions required to maximize the photoluminescence emission. Reasonably intense photoluminescence emission has been obtained, comparable to the level obtained by other groups, yet no absolute intensity calibration is currently available. Chemical analysis of the films was performed with both SIMS and RBS. The films do contain some carbon contamination, but the current thinking that this acts to reduce the lattice constant in the vicinity of the optical center and reduces the creation of crystalline defects.
Publisher:
ISBN:
Category :
Languages : en
Pages : 22
Book Description
Epitaxial Si films doped with high concentrations (10(exp 19)/cu cm) of the rare earth element Er have been deposited. The deposition technique used was low temperature plasma enhanced chemical vapor deposition with an electron cyclotron resonance source. The deposition temperatures were below 500 deg C to avoid formation of erbium silicide which is optically inactive. The growth process for undoped samples was developed to the point that good quality epitaxial material could be obtained on demand. Some work was done investigating the concept of limited epitaxial thickness. Four different metal organic Er precursors were tried and the greatest success was found determine (bis trimethyl silyl amido) Er (III). A designed experiment was performed to the most important process conditions required to maximize the photoluminescence emission. Reasonably intense photoluminescence emission has been obtained, comparable to the level obtained by other groups, yet no absolute intensity calibration is currently available. Chemical analysis of the films was performed with both SIMS and RBS. The films do contain some carbon contamination, but the current thinking that this acts to reduce the lattice constant in the vicinity of the optical center and reduces the creation of crystalline defects.
Low Temperature Epitaxial Growth of Semiconductors
Author: Takashi Hariu
Publisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356
Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Publisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356
Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Rare-Earth Doped Semiconductors II: Volume 422
Author: S. Coffa
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 392
Book Description
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 392
Book Description
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Scientific and Technical Aerospace Reports
Rare-Earth Doped Semiconductors: Volume 301
Author: Gernot S. Pomrenke
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Low Temperature Epitaxial Growth of Ge-C and Ge-Si-C Alloy Thin Films
Epitaxial Silicon Technology
Author: B Baliga
Publisher: Elsevier
ISBN: 0323155456
Category : Technology & Engineering
Languages : en
Pages : 337
Book Description
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Publisher: Elsevier
ISBN: 0323155456
Category : Technology & Engineering
Languages : en
Pages : 337
Book Description
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Low Temperature Silicon Selective Epitaxial Growth (SEG) and Phosphorous Doping in a Reduced-pressure Pancake Reactor
Author: Weichung Wang
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 96
Book Description
Since average ideality factors, leakage currents, breakdown voltages, and current gains extracted from 970C̊-40T SEG devices were similar to those of substrate devices, the material quality of the SEG deposited at 970C̊ and 40 torr was indicated to be as good as the bulk silicon."
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 96
Book Description
Since average ideality factors, leakage currents, breakdown voltages, and current gains extracted from 970C̊-40T SEG devices were similar to those of substrate devices, the material quality of the SEG deposited at 970C̊ and 40 torr was indicated to be as good as the bulk silicon."
Crystal Growth Bibliography
Author:
Publisher: Springer Nature
ISBN: 1461596181
Category :
Languages : en
Pages : 270
Book Description
Publisher: Springer Nature
ISBN: 1461596181
Category :
Languages : en
Pages : 270
Book Description