Author: Bi-Ke YangPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Low Temperature Epitaxial Growth of Ge-C and Ge-Si-C Alloy Thin Films
Author: Bi-Ke YangSilicon-Germanium Carbon Alloys
Author: S. PantellidesPublisher: CRC Press
ISBN: 9781560329633
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Lateral Epitaxial Growth of Ge Films on Si Via a Vapor-liquid-solid Mechanism
Author: Weizhen WangPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
"In recent years, there has been an increasing interest in developing alternative semiconductor materials since traditional Si-based devices have approached their physical limits. Given that Si has many advantages over other materials as substrate, the use of Si wafer is expected to continue. It is therefore important to grow high-quality semiconductor materials, e.g., thin films or nanowires, epitaxially on Si. The past thirty years have seen rapid advances in the field of heteroepitaxial Ge growth on Si because Ge-based devices can add functionality to Si chips and may be the key to enable next-generation computer systems or solar cells. The direct growth of Ge on Si, however, suffers from high-density threading dislocations that are formed during the growth process; these defects act as scattering and recombination centers that degrade the device performance. In this thesis, a novel growth approach, metal-catalyzed, lateral epitaxial growth, is demonstrated to grow Ge films on Si with reduced threading dislocation density (TDD). In contrast to the traditional blanketed film growth on Si, this technique starts with a small crystal nucleation at a specific position on Si followed by a Ge lateral growth in the horizontal direction. It has been hypothesized that during the lateral growth process the lattice mismatch between Si and Ge can be accommodated by the extension of the preexisting misfit dislocations from the initial growth region or the nucleation of dislocations from the film sidewalls instead of generating additional threading dislocations from the film surface. In this thesis, SEM and TEM were two primary characterization techniques to study the film morphologies, the growth process, and the relaxation mechanisms. One important finding was that the first nucleation areas of the films often have a higher Si concentration or may be thinner compared to the lateral overgrowth areas. This is important because such differences made it possible to figure out where the first growth occurred in electron microscopy. From here we could compare the dislocation morphologies in different areas. In plan-view and cross-sectional TEM micrographs, high-density threading dislocations were found to be present in the initial growth areas while the lateral overgrowth areas demonstrated substantially reduced TDD or even defect-free areas. Moreover, the XRD results showed that the Ge films were almost fully relaxed with little Si incorporation. Given that the growth occurred at a low temperature, 375-500 °C, we suggest the presence of new relaxation mechanism since the previous mechanism, dislocation nucleation and glide, would require a much higher temperature to fully relax the lattice mismatch strain. Therefore, we hypothesize that the strain induced by the lattice mismatch can be relaxed by extending the preexisting misfit dislocations and that lateral growth can "build in" dislocations as it grows. Furthermore, this thesis proposes a simple model to describe the relation between the catalyst (Au) area and the area of the film in plan-view SEM; a film's size can thus be estimated by the size and shape of the Au catalyst. It has been found that a large Au catalyst can absorb more Ge due to its larger vapor-liquid interface, but more Ge is required to saturate the Au. This thesis also presents a study of the optimum growth condition of Ge lateral growth. The results show that high temperature and high GeH4 partial pressure can boost the growth rate and thus increase the film size within a specified period of time. However, high growth rate can cause more uncatalyzed, vapor-solid Ge growth on Si as well. A relatively lower growth rate and a longer growth time are thus required to simultaneously increase the size of the films and reduce the uncatalyzed growth." --
Thin Film Processes II
Author: Werner KernPublisher: Elsevier
ISBN: 0080524214
Category : Technology & Engineering
Languages : en
Pages : 881
Book Description
This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. - Provides an all-new sequel to the 1978 classic, Thin Film Processes - Introduces new topics, and several key topics presented in the original volume are updated - Emphasizes practical applications of major thin film deposition and etching processes - Helps readers find the appropriate technology for a particular application
Low Temperature Epitaxial Growth of Rare Earth Doped Silicon and Silicon Germanium Alloys
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
This document reports on the progress towards the growth of rare earth dope Si by low temperature plasma enhanced chemical vapor deposition (PECVD). The goal of this investigation is to develop a commercially compatible technique to deposit thick, high concentration, precipitation free, rare earth doped Si films. The low temperature growth technique used is plasma enhanced chemical vapor deposition with an electron cyclotron resonance(ECR) source. Low temperature processing is needed to avoid the formation of ErSi2 precipitates which are known to be optically inactive. Epitaxial Si films doped with varying concentrations of Er have been grown in this investigation at low substrate temperatures (
SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
Author: John D. CresslerPublisher: CRC Press
ISBN: 1420066862
Category : Technology & Engineering
Languages : en
Pages : 264
Book Description
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Silicon-Germanium Alloys for Photovoltaic Applications
Author: Ammar NayfehPublisher: Elsevier
ISBN: 0323856314
Category : Technology & Engineering
Languages : en
Pages : 214
Book Description
Silicon-Germanium Alloys for Photovoltaic Applications provides a comprehensive look at the use of Silicon-Germanium alloys Si1-xGex in photovoltaics. Different methods of Si1-xGex alloy deposition are reviewed, including their optical and material properties as function of Ge% are summarized, with SiGe use in photovoltaic applications analyzed. Fabrication and characterization of single junction Si1-xGex solar cells on Si using a-Si as emitter is discussed, with a focus on the effect of different Ge%. Further, the book highlights the use Si1-xGex as a template for lattice matched deposition of III-V layers on Si, along with its challenges and benefits, including financial aspects. Finally, fabrication and characterization of single junction GaAsxP1-x cells on Si via Si1-xGex is discussed, along with the simulation and modeling of graded SiGe layers and experimental model verification. - Includes a summary of SiGe alloys material properties relevant for solar research, all compiled at one place - Presents various simulation models and analysis of SiGe material properties on solar cell performance - Includes a cost-analysis for III-V/Si solar cells via SiGe alloys
Handbook of Crystal Growth
Author: Tom KuechPublisher: Elsevier
ISBN: 0444633057
Category : Science
Languages : en
Pages : 1384
Book Description
Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Scientific and Technical Aerospace Reports
Author: Crystal Growth Bibliography
Author: Publisher: Springer Nature
ISBN: 1461596181
Category :
Languages : en
Pages : 270
Book Description