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Author: R. Caudano Publisher: Springer Science & Business Media ISBN: 1468440586 Category : Science Languages : en Pages : 570
Book Description
This volume contains most of the invited and contributed papers presented at the second international conference devoted to the general topic "Vibrations at Surfaces" and which took place from 10 to 12 September 1980 at the Facu1tes Notre-Dame de 1a Paix in Namur, Belgium. The conference was organized to review the large amount of information gathered in this field over the late seventies as a result of th~ rapid improvements and dissemination of surface spectroscopic technique such a electron energy loss, infrared and Raman surface spectroscopies. Much time was devoted to Raman spectroscopy of adsorbed mo1e 'cu1es. After several years of vivid debate over the causes of the observed large enhancement of Raman cross section, a clearer pic ture emerges from the papers presented here: the actual value of the enhancement factor does depend in a complicated manner on long range surface roughness, atomic-scale roughness and the dielectric properties of the substrate as well as on the electronic structure of the molecule in its adsorbed state. Less controversial are the results obtained with electron energy loss spectroscopy (EELS) and several sessions of the con ference were devoted to the approach. As witnessed by the growing number of laboratories using the technique, EELS is now a mature spectroscopic tool for the characterization and analysis of the chemisorption bond.
Author: R. Caudano Publisher: Springer Science & Business Media ISBN: 1468440586 Category : Science Languages : en Pages : 570
Book Description
This volume contains most of the invited and contributed papers presented at the second international conference devoted to the general topic "Vibrations at Surfaces" and which took place from 10 to 12 September 1980 at the Facu1tes Notre-Dame de 1a Paix in Namur, Belgium. The conference was organized to review the large amount of information gathered in this field over the late seventies as a result of th~ rapid improvements and dissemination of surface spectroscopic technique such a electron energy loss, infrared and Raman surface spectroscopies. Much time was devoted to Raman spectroscopy of adsorbed mo1e 'cu1es. After several years of vivid debate over the causes of the observed large enhancement of Raman cross section, a clearer pic ture emerges from the papers presented here: the actual value of the enhancement factor does depend in a complicated manner on long range surface roughness, atomic-scale roughness and the dielectric properties of the substrate as well as on the electronic structure of the molecule in its adsorbed state. Less controversial are the results obtained with electron energy loss spectroscopy (EELS) and several sessions of the con ference were devoted to the approach. As witnessed by the growing number of laboratories using the technique, EELS is now a mature spectroscopic tool for the characterization and analysis of the chemisorption bond.
Author: H. Adam Publisher: Elsevier ISBN: 1483164934 Category : Technology & Engineering Languages : en Pages : 304
Book Description
1965 Transactions of the Third International Vacuum Congress, Volume 2, Part I documents the proceedings on the Third International Vacuum Congress held in Stuttgart, Germany on June 28-July 2, 1965. This compilation is divided into four sessions. Session 1 focuses on evaporation and thin films, while Session 2 deals with the flow of gases. The components and materials of orthodox vacuum pumps are covered in Session 3. The last session concentrates on pressure measurement and leak detection. The topics discussed include developments in the vacuum deposition of electronic film circuits; bulk sublimation of titanium; transmission probability determination with directed mass motion and with mean free path considerations; measuring the density and direction of gas molecular flow using an ionization detector; and porous metal isolation traps and cryosorbents in vacuum technique. The factors influencing the performance and design of water-cooled condensers; electrode dimensions of the Bayard-Alpert ionization gauge and its sensitivity; and analysis of the changes in Pirani gauge characteristics are also deliberated in this text. This volume is beneficial to students and researchers conducting work on vacuum, including other related subjects such as etymology, electromagnetism, and quantum mechanics.
Author: Helmut Bannwarth Publisher: John Wiley & Sons ISBN: 3527604723 Category : Science Languages : en Pages : 512
Book Description
Based on the very successful German editions, this English version has been thoroughly updated and revised to reflect the developments of the last years and the latest innovations in the field. Throughout, the author makes excellent use of real-life examples and highly praised didactics to disseminate his expert knowledge needed by vacuum technology users and engineers in their daily work at industrial plants, as consultants or in design offices. He covers in detail the most modern liquid ring pumps, with chapters dedicated to maintenance, explosion prevention and general procedures for safety at work with this technology. The whole is backed by a large repository of frequently needed technical data, unit conversions, formulae and current industrial, technical and legal norms without drawing on unnecessary complex or theoretical mathematics. The result is the ideal hands-on introduction to vacuum technology, ranging from fundamentals to in-depth expert knowledge on liquid-ring vacuum pumps.
Author: A. Berman Publisher: Academic Press ISBN: 1483273792 Category : Science Languages : en Pages : 413
Book Description
Total Pressure Measurements in Vacuum Technology focuses on the measurement of low total pressure in hostile environments or in the presence of magnetic fields. This book emphasizes the general processes and problems involved in measurement techniques and physical principles on which vacuum gauges operate, rather than on the detailed description of the gauges. The design and techniques involved in the use of special instruments that determine "pressure or gas density, such as pressure converters or radioactive gauges, are also described. This publication is mainly intended for graduate students and research scientists who have a good general background in physics and engineering.
Author: B.E. Deal Publisher: Springer Science & Business Media ISBN: 1489907742 Category : Science Languages : en Pages : 543
Book Description
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Author: A.G. Cullis Publisher: CRC Press ISBN: 1000157016 Category : Science Languages : en Pages : 836
Book Description
The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.
Author: R. Caudano
Author: R. Caudano
Author: United States. National Bureau of Standards
Author: H. Adam
Author: 
Author: National Institute of Standards and Technology (U.S.)
Author: Helmut Bannwarth
Author: A. Berman
Author: United States. National Bureau of Standards
Author: B.E. Deal
Author: A.G. Cullis