Laser Annealing of Semiconductors PDF Download

Author: J Poate
Publisher: Elsevier
ISBN: 0323145426
Category : Technology & Engineering
Languages : en
Pages : 577

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Book Description
Laser Annealing of Semiconductors deals with the materials science of surfaces that have been subjected to ultrafast heating by intense laser or electron beams. This book is organized into 13 chapters that specifically tackle transient annealing of compound semiconductors. After briefly dealing with an overview of laser annealing, this book goes on discussing the concepts of solidification and crystallization pertinent to the field. These topics are followed by discussions on the main mechanisms of interaction of photon and electron beams with condensed matter; the calculation of thermophysical properties of crystalline materials; and high-speed crystal growth by laser annealing of ion-implanted silicon. The subsequent chapters describe the microstructural and topographical properties of annealed semiconductor layers and the epitaxy of ion-implanted silicon irradiated with a laser or electron beam single pulse. This text also explores the electronic and surface properties and the continuous-wave beam processing of semiconductors. The concluding chapters cover various reactions in metal-semiconductor systems, such as fast and laser-induced melting, solidification, mixing, and quenching. Laser-induced interactions in metal-semiconductor systems and the factors involved in control of the heat treatment process are also discussed in these chapters. Materials scientists and researchers and device engineers will find this book invaluable.

Author: Fuccio Cristiano
Publisher: Woodhead Publishing
ISBN: 0128202564
Category : Technology & Engineering
Languages : en
Pages : 428

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Book Description
Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. - Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena - Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations - Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors

Author: Fred Chernow
Publisher: Springer Science & Business Media
ISBN: 1461341965
Category : Science
Languages : en
Pages : 733

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Book Description
The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976. Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries. As has become the custom at these conferences, the sessions were intense with the coffee breaks and evenings given to informal meetings among the participants. It was a time to renew old friendships, begin new ones, exchange ideas, personally question authors of papers that appeared in the literature since the last conference and find out what was generally happening in Ion Implantation. In recent years it has beome more difficult to get funding to travel to such meetings. To assist the participating authors financial aid was solicited from industry and the Office of Naval Research. We are most grateful for their positive response to our requests. The success of the conference was in part due to their generous contributions. The Program Committee had the unhappy task of the reviewing of more than 170 abstracts. The result of their labors was well worth their effort. Much thanks goes to them for molding the conference into an accurate representation of activities in the field. Behind the scenes in Boulder, local arrangements were handled ably by Graeme Eldridge. The difficulty of this task cannot be overemphasized. Our thanks to him for a job well done.

Author:
Publisher: Academic Press
ISBN: 0080864430
Category : Technology & Engineering
Languages : en
Pages : 335

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Book Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Author: J. M. Poate
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 584

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Author:
Publisher: Academic Press
ISBN: 0080864422
Category : Technology & Engineering
Languages : en
Pages : 321

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Book Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Author: H. Ryssel
Publisher: Springer Science & Business Media
ISBN: 3642691560
Category : Science
Languages : en
Pages : 564

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Book Description
The Fourth International Conference on Ion Implantation: Equipment and Tech niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.

Author: S. Coffa
Publisher: Newnes
ISBN: 044459972X
Category : Science
Languages : en
Pages : 1031

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Book Description
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.

Author: United States. Department of Energy. Office of Basic Energy Sciences
Publisher:
ISBN:
Category : Conservation of natural resources
Languages : en
Pages : 188

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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1346

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