Laser Annealing of Ion Implanted HgCdTe PDF Download

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Laser Annealing of Ion Implanted HgCdTe

Laser Annealing of Ion Implanted HgCdTe PDF Author: R. Kalish
Publisher:
ISBN:
Category :
Languages : en
Pages : 29

Book Description
The Structural and electrical changes caused by the implantation and annealing of donor and acceptor ions into Hg1-xCdxTe (x=0.2-0.3) were studied by a variety of ion-beam probing (RBS or PIXE combined with channeling) and electrical (C-V, Hall, photodiodes) techniques. Several annealing procedures (Furnace, Q switched Ruby laser and CW CO2 laser) were tried. Best annealing was obtained when the implanted HgCdTe was heated for 0.4 seconds to 380 deg C by exposing it to a flash of photons delivered by a CW CO2 laser. This novel mode of Rapid Thermal Annealing is shown to recover the crystal structure without causing changes in stoichiometry and to electrically activate both donor (B) and acceptor (P) implants Mesa and planar p on n photodiodes, sensitive to IR radiation (3.5-5 micrometers, were obtained when this annealing procedure was employed to P implanted (200KeV, 2X10 to the 14th power/sq.cm) n-Hg. 71Cd. 29Te. Originator supplied keywords include: Ion implantation, Laser annealing, HgCdTe, Radiation damage, Defects in semiconductors.
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