Author: G. L. OlsonPublisher:
ISBN:
Category :
Languages : en
Pages : 77
Book Description
Kinetics of Solid Phase Crystallization in Amorphous Silicon
Author: G. L. OlsonKinetics of Solids Phase Crystallization in Amorphous Silicon
Author: G.L. OlsonGrowth and Segregation Kinetics During Thermal and Ion Beam Induced Epitaxial Crystallization of Amorphous Silicon
Author: Jonathan S. CusterSolid Phase Epitaxy in Amorphous Silicon
Author: Min WuPublisher:
ISBN:
Category :
Languages : en
Pages : 57
Book Description
The kinetics and mechanism for solid phase epitaxy (SPE) in has been widely studied due to its critical use in the semiconductor industry. Extensive studies have established the kinetics of this transformation over a wide range of temperatures and time scales; however, careful exploration of the behavior under millisecond thermal annealing is limited. As laser spike annealing is now a widely adopted processing tool for semiconductor manufacturing, comparison and understanding of the kinetics in this time regime is critical. In this work, the lateral-gradient laser spike annealing method was used to investigate the solid phase epitaxy of amorphous silicon over dwell times from 250 ms to 10 ms using CO2 laser irradiation. Silicon samples, amorphized by Si self-implantation, were annealed under varying dwell times and peak temperatures. Transformations from amorphous to crystalline Si, and ultimately melt, were observed using white light and narrow band LED microscope imaging. The width of fully crystallized zone, and the width of the melted area were recorded to determine threshold laser powers for the onset of full crystallization and melting. Partially crystallized areas (partial SPE) was observed at the boundary of the fully crystallized zone; to understand the SPE kinetics in this region, visible light spectroscopy was used to measure the reflectance as a function of wavelength to quantify the degree of SPE growth. These rates are compared with previous estimates using estimated peak temperatures from earlier calibrations of the LSA system. SPE rates are exponentially dependent on temperature and thus also provide a means of calibrating the temperature reached during LSA as a function of the laser power. Based on measured and estimated SPE rates in the LSA timescale, the peak temperature as a function of laser power was estimated for the current LSA configuration. Results of this calibration are compared with earlier temperature calibrations.
Crystallization Kinetics in Amorphous Silicon Thin Films
Author: Brenda D. KingPublisher:
ISBN:
Category : Amorphous substances
Languages : en
Pages : 88
Book Description
Oriented Crystallization on Amorphous Substrates
Author: E.I. GivargizovPublisher: Springer Science & Business Media
ISBN: 1489925600
Category : Technology & Engineering
Languages : en
Pages : 377
Book Description
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.
Kinetics of Crystallization of Selected Amorphous Silicon Films
Author: Franklin David Van GiesonPublisher:
ISBN:
Category : Amorphous substances
Languages : en
Pages : 150
Book Description
Solid Phase Crystallization of Amorphous Semiconductors and Ion Mixing Effects in Metal/Si Systems
Author: Chien-Shing PaiPublisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 496
Book Description
Solid-Phase Crystallization of Amorphous Silicon Films
Author: Dong Nyung LeePublisher:
ISBN:
Category : Science
Languages : en
Pages :
Book Description
Solid-Phase Crystallization of Amorphous Silicon Films.
Author: