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Author: Emanuele Rimini Publisher: Springer Science & Business Media ISBN: 1461522595 Category : Technology & Engineering Languages : en Pages : 400
Book Description
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Author: Emanuele Rimini Publisher: Springer Science & Business Media ISBN: 1461522595 Category : Technology & Engineering Languages : en Pages : 400
Book Description
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Author: A. H. Agajanian Publisher: Springer ISBN: Category : Reference Languages : en Pages : 282
Book Description
During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index. The volumes and numbers of the abstracts are given to pro vide access to the abstracts.
Author: Michael Nastasi Publisher: Springer Science & Business Media ISBN: 3540452982 Category : Science Languages : en Pages : 271
Book Description
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Author: P. D. Townsend Publisher: Cambridge University Press ISBN: 9780521394307 Category : Science Languages : en Pages : 296
Book Description
This book is the first to give a detailed description of the factors and processes that govern the optical properties of ion implanted materials, as well as an overview of the variety of devices that can be produced in this way. Beginning with an overview of the basic physics and practical methods involved in ion implantation, the topics of optical absorption and luminescence are then discussed. A chapter on waveguide analysis then provides the background for a description of particular optical devices, such as waveguide lasers, mirrors, and novel nonlinear materials. The book concludes with a survey of the exciting range of potential applications.
Author: Richard C. Jaeger Publisher: Pearson ISBN: 9780201444940 Category : Integrated circuit Languages : en Pages : 0
Book Description
For courses in Theory and Fabrication of Integrated Circuits. The author's goal in writing this text was to present a concise survey of the most up-to-date techniques in the field. It is devoted exclusively to processing, and is highlighted by careful explanations, clear, simple language, and numerous fully-solved example problems. This work assumes a minimal knowledge of integrated circuits and of terminal behavior of electronic components such as resistors, diodes, and MOS and bipolar transistors.
Author: J. S. Williams Publisher: Academic Press ISBN: 1483220648 Category : Technology & Engineering Languages : en Pages : 432
Book Description
Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
Author: Androula G. Nassiopoulou Publisher: World Scientific ISBN: 9810247699 Category : Technology & Engineering Languages : en Pages : 409
Book Description
This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics; nanotechnology; nanodevices, sensors and microsystems. The latest news and future challenges in these fields are presented in invited papers.
Author: Stephen A. Campbell Publisher: Oxford University Press, USA ISBN: Category : Technology & Engineering Languages : en Pages : 572
Book Description
The Science and Engineering of Microelectronic Fabrication provides an introduction to microelectronic processing. Geared towards a wide audience, it may be used as a textbook for both first year graduate and upper level undergraduate courses and as a handy reference for professionals. The text covers all the basic unit processes used to fabricate integrated circuits including photolithography, plasma and reactive ion etching, ion implantation, diffusion, oxidation, evaporation, vapor phase epitaxial growth, sputtering and chemical vapor deposition. Advanced processing topics such as rapid thermal processing, nonoptical lithography, molecular beam epitaxy, and metal organic chemical vapor deposition are also presented. The physics and chemistry of each process is introduced along with descriptions of the equipment used for the manufacturing of integrated circuits. The text also discusses the integration of these processes into common technologies such as CMOS, double poly bipolar, and GaAs MESFETs. Complexity/performance tradeoffs are evaluated along with a description of the current state-of-the-art devices. Each chapter includes sample problems with solutions. The book also makes use of the process simulation package SUPREM to demonstrate impurity profiles of practical interest.
Author: Emanuele Rimini
Author: Emanuele Rimini
Author: A. H. Agajanian
Author: Michael Nastasi
Author: 
Author: P. D. Townsend
Author: Michael Nastasi
Author: Richard C. Jaeger
Author: J. S. Williams
Author: Androula G. Nassiopoulou
Author: Stephen A. Campbell