Ion Implantation Lattice Damage in Silicon and Gallium Arsenide PDF Download

Author: Wesley Harold Weisenberger
Publisher:
ISBN:
Category : Ion bombardment
Languages : en
Pages : 136

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Author: T. Ambridge
Publisher:
ISBN:
Category :
Languages : en
Pages : 16

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Author: Robert Ell Tremain
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 93

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Author: Bruce R. Pecor (CAPT, USAF.)
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ISBN:
Category :
Languages : en
Pages :

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Author: Stuart Hutchinson
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Category :
Languages : en
Pages :

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Author: Susumu Namba
Publisher: Springer Science & Business Media
ISBN: 1468421514
Category : Science
Languages : en
Pages : 716

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The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.

Author: Fred Chernow
Publisher: Springer Science & Business Media
ISBN: 1461341965
Category : Science
Languages : en
Pages : 733

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The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976. Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries. As has become the custom at these conferences, the sessions were intense with the coffee breaks and evenings given to informal meetings among the participants. It was a time to renew old friendships, begin new ones, exchange ideas, personally question authors of papers that appeared in the literature since the last conference and find out what was generally happening in Ion Implantation. In recent years it has beome more difficult to get funding to travel to such meetings. To assist the participating authors financial aid was solicited from industry and the Office of Naval Research. We are most grateful for their positive response to our requests. The success of the conference was in part due to their generous contributions. The Program Committee had the unhappy task of the reviewing of more than 170 abstracts. The result of their labors was well worth their effort. Much thanks goes to them for molding the conference into an accurate representation of activities in the field. Behind the scenes in Boulder, local arrangements were handled ably by Graeme Eldridge. The difficulty of this task cannot be overemphasized. Our thanks to him for a job well done.

Author: Jacek Jasiński (fizyka)
Publisher:
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Category :
Languages : en
Pages :

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Author: Michael Wayne Bench
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Category :
Languages : en
Pages :

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The crystalline-to-amorphous transition induced by ion implantation was investigated in GaAs and GaP using transmission electron microscopy. The experiments included those performed in situ using the HVEM-Tandem Accelerator Facility at Argonne National Laboratory and also those performed using high-resolution TEM. The implantations were made with Ar$sp+$, Kr$sp+$, Xe$sp+$, and Au$sp+$ ions (energy 50 or 80 keV) at 30 and 300 K. The high-resolution experiments confirmed the amorphous nature of the damage produced in individual displacement cascades. The in situ experiments at 30 K showed that amorphous zones are produced within isolated cascades with high probability. It was found that the efficiency of production of amorphous damage increases with increasing ion mass. The probability that an individual cascade will generate an amorphous region decreases when the implantation is performed at room temperature in GaAs but remains the same for GaP. Annealing experiments in the 30-300 K range demonstrated that there is significant damage recovery below 300 K in GaAs but none in GaP. Calculations of the energy density deposited in the cascades, determined through Monte-Carlo simulations, suggest that the formation and subsequent quenching of a molten zone may be responsible for the production of the amorphous damage. In addition to the experiments on damage production, electron beam induced recrystallization of isolated amorphous zones was investigated in GaAs, GaP, Si, and Ge. Regrowth was induced in all materials at electron energies below the threshold displacement energy. However, a minimum energy threshold was found only in Si. Results in the other three materials, particularly Ge, suggest that beam-induced ionization may be playing a role in the solid-phase epitaxial regrowth process in each of those materials.

Author:
Publisher: INSPEC
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 370

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