Author: 楊宸權Publisher:
ISBN:
Category :
Languages : en
Pages : 111
Book Description
Investigation of Zinc Tin Oxide Thin Films and Their Optoelectrical Applications Fabricated by RF Sputtering System
Author: 楊宸權Investigation of Silicon Zinc Tin Oxide Thin Films and Their Optoelectrical Applications Fabricated by RF Sputtering
Author: Investigation of Zinc Tin Oxide Thin Films and Their UV Optoelectrical Devices Fabricated by RF Sputtering
Author: Fabrication of Zinc Nitride Thin Films Using RF Magnetron Sputtering Deposition for Optoelectronic Applications
Author: Ting WenPublisher:
ISBN:
Category : Optoelectronics
Languages : en
Pages : 122
Book Description
Zinc nitride thin films possess a small optical band gap with direct transition, low resistivity, high mobility and carrier concentration. Therefore, it may be suitable as an optoelectronic material for infrared sensors, smart windows and energy conversion devices. The objective of this work is to grow zinc nitride thin films using RF magnetron sputtering, understand its mechanical, optical, and electrical properties, and investigate its performance as light sensing devices. Synthesis and characterization of zinc nitride thin films has been investigated in this work. An RF magnetron sputtering deposition was employed to synthesize zinc nitride thin films using pure metal zinc target in either N2-Ar or N2-Ar-H2 mixtures. The microstructural, optical and electrical characterizations of the representative films were investigated with stylus profilometry, XRD, AFM, SEM, TEM, UV-VIS-NIR double beam spectrometry, and Hall effect measurement. The photoresponse of the zinc nitride photoconductors was also studied under the irradiation of white light and NIR light. The as-deposited zinc nitride thin films were relatively soft and densely packed with smooth surface. It possesses a narrow optical band gap in the NIR range with direct transition. The zinc nitride showed n-type conductivity with low resistivity and high carrier concentration. To study the RF discharge power effect, the zinc nitride thin films were synthesized at different discharge powers densities. With discharge power density increasing, the film deposition rate increased, and the zinc nitride films acquired better crystalline structure, smaller optical band gap and less oxygen contaminations. After thermal annealing at moderate temperatures in either air or O2, the annealed zinc nitride thin films were photoconductive under irradiation of both NIR light and white light. The largest photoresponse and fastest response times were measured at the room temperature for the zinc nitride thin films annealed at 300 degree in the air. Hydrogen inclusion can modify the electrical and optical properties of crystalline semiconductor films by introducing impurity donor states. The ZnNx:H films deposited in N2-Ar-H2 mixture acquired less oxygen contamination and higher relative nitrogen atom concentration than the ZnNx films deposited in N2-Ar mixture. The as-deposited ZnNx:H films showed a clear photonic behavior under white light irradiation, and the annealed ZnNx:H films exhibited a pronounced change in resistance under both white light and NIR light irradiation comparing to the annealed ZnNx films. This was the first time to report photoresponse of zinc nitride thin films fabricated by reactive sputtering method. The photoconductivity was gradually improved by optimization of deposition conditions, annealing conditions and film compositions.
Investigation of Indium Tungsten Oxide Thin Film Fabricated by RF Sputtering System and Their Applications
Author: 陳冠吟Investigation of Magnesium Indium Oxide Thin Film Fabricated by RF Sputtering System and Their Optoelectronics Applications
Author: 陳維德Zinc Oxide Bulk, Thin Films and Nanostructures
Author: Chennupati JagadishPublisher: Elsevier
ISBN: 0080464033
Category : Science
Languages : en
Pages : 600
Book Description
With an in-depth exploration of the following topics, this book covers the broad uses of zinc oxide within the fields of materials science and engineering:- Recent advances in bulk , thin film and nanowire growth of ZnO (including MBE, MOCVD and PLD), - The characterization of the resulting material (including the related ternary systems ZgMgO and ZnCdO), - Improvements in device processing modules (including ion implantation for doping and isolation ,Ohmic and Schottky contacts , wet and dry etching), - The role of impurities and defects on materials properties - Applications of ZnO in UV light emitters/detectors, gas, biological and chemical-sensing, transparent electronics, spintronics and thin film
Zinc Oxide - A Material for Micro- and Optoelectronic Applications
Author: Norbert H. NickelPublisher: Springer Science & Business Media
ISBN: 140203475X
Category : Science
Languages : en
Pages : 245
Book Description
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 – 40 meV and 60 – 70 meV.
Chemical Solution Deposition of Functional Oxide Thin Films
Author: Theodor SchnellerPublisher: Springer Science & Business Media
ISBN: 3211993118
Category : Technology & Engineering
Languages : en
Pages : 801
Book Description
This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980’s. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed “cooking recipes” for selected material systems are offered.
Optimisation of ZnO Thin Films
Author: Saurabh NagarPublisher: Springer
ISBN: 9811008094
Category : Technology & Engineering
Languages : en
Pages : 101
Book Description
This monograph describes the different implantation mechanisms which can be used to achieve strong, reliable and stable p-type ZnO thin films. The results will prove useful in the field of optoelectronics in the UV region. This book will prove useful to research scholars and professionals working on doping and implantation of ZnO thin films and subsequently fabricating optoelectronic devices. The first chapter of the monograph emphasises the importance of ZnO in the field of optoelectronics for ultraviolet (UV) region and also discusses the material, electronic and optical properties of ZnO. The book then goes on to discuss the optimization of pulsed laser deposited (PLD) ZnO thin films in order to make successful p-type films. This can enable achievement of high optical output required for high-efficiency devices. The book also discusses a hydrogen implantation study on the optimized films to confirm whether the implantation leads to improvement in the optimized results.