Investigation of Single-Section InAs/InP Quantum Dot Mode-Locked Lasers PDF Download

Author: Zhejing Jiao
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Jimyung Kim
Publisher:
ISBN:
Category : Mode-locked lasers
Languages : en
Pages : 115

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Book Description
In this dissertation, self-assembled InAs/InGaAs quantum dot Fabry-Pérot lasers and mode-locked lasers are investigated. The mode-locked lasers investigated include monolithic and curved two-section devices, and colliding pulse mode-locked diode lasers. Ridge waveguide semiconductor lasers have been designed and fabricated by wet etching processes. Electroluminescence of the quantum dot lasers is studied. Cavity length dependent lasing via ground state and/or excited state transitions is observed from quantum dot lasers and the optical gain from both transitions is measured. Stable optical pulse trains via ground and excited state transitions are generated using a grating coupled external cavity with a curved two-section device. Large differences in the applied reverse bias voltage on the saturable absorber are observed for stable mode-locking from the excited and ground state mode-locking regimes. The optical pulses from quantum dot mode-locked lasers are investigated in terms of chirp sign and linear chirp magnitude. Upchirped pulses with large linear chirp magnitude are observed from both ground and excited states. Externally compressed pulse widths from the ground and excited states are 1.2 ps and 970 fs, respectively. Ground state optical pulses from monolithic mode-locked lasers e.g., two-section devices and colliding pulse mode-locked lasers, are also studied. Transformed limited optical pulses (~4.5 ps) are generated from a colliding pulse mode-locked semiconductor laser. The above threshold linewidth enhancement factor of quantum dot Fabry-Pérot lasers is measured using the continuous wave injection locking method. A strong spectral dependence of the linewidth enhancement factor is observed around the gain peak. The measured linewidth enhancement factor is highest at the gain peak, but becomes lower 10 nm away from the gain peak. The lowest linewidth enhancement factor is observed on the anti-Stokes side. The spectral dependence of the pulse duration from quantum dot based mode-locked lasers is also observed. Shorter pulses and reduced linear chirp are observed on the anti-Stokes side and externally compressed 660 fs pulses are achieved in this spectral regime. A novel clock recovery technique using passively mode-locked quantum dot lasers is investigated. The clock signal (~4 GHz) is recovered by injecting an interband optical pulse train to the saturable absorber section. The excited state clock signal is recovered through the ground state transition and vice-versa. Asymmetry in the locking bandwidth is observed. The measured locking bandwidth is 10 times wider when the excited state clock signal is recovered from the ground state injection, as compared to recovering a ground state clock signal from excited state injection.

Author: Victor Mikhailovich Ustinov
Publisher:
ISBN: 9780198526797
Category : Science
Languages : en
Pages : 306

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The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.

Author: Sergey V. Gaponenko
Publisher: Cambridge University Press
ISBN: 1107145503
Category : Science
Languages : en
Pages : 453

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An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.

Author: Cunzhu Tong
Publisher: Elsevier
ISBN: 0128141638
Category : Science
Languages : en
Pages : 208

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Nanoscale Semiconductor Lasers focuses on specific issues relating to laser nanomaterials and their use in laser technology. The book presents both fundamental theory and a thorough overview of the diverse range of applications that have been developed using laser technology based on novel nanostructures and nanomaterials. Technologies covered include nanocavity lasers, carbon dot lasers, 2D material lasers, plasmonic lasers, spasers, quantum dot lasers, quantum dash and nanowire lasers. Each chapter outlines the fundamentals of the topic and examines material and optical properties set alongside device properties, challenges, issues and trends. Dealing with a scope of materials from organic to carbon nanostructures and nanowires to semiconductor quantum dots, this book will be of interest to graduate students, researchers and scientific professionals in a wide range of fields relating to laser development and semiconductor technologies. - Provides an overview of the active field of nanostructured lasers, illustrating the latest topics and applications - Demonstrates how to connect different classes of material to specific applications - Gives an overview of several approaches to confine and control light emission and amplification using nanostructured materials and nano-scale cavities

Author: Edik U. Rafailov
Publisher: John Wiley & Sons
ISBN: 3527634495
Category : Science
Languages : en
Pages : 243

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In this monograph, the authors address the physics and engineering together with the latest achievements of efficient and compact ultrafast lasers based on novel quantum-dot structures and devices. Their approach encompasses a broad range of laser systems, while taking into consideration not only the physical and experimental aspects but also the much needed modeling tools, thus providing a holistic understanding of this hot topic.

Author: Bozhang Dong
Publisher: Springer Nature
ISBN: 3031178270
Category : Technology & Engineering
Languages : en
Pages : 206

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This book provides guidelines and design rules for developing high-performance, low-cost, and energy-efficient quantum-dot (QD) lasers for silicon photonic integrated circuits (PIC), optical frequency comb generation, and quantum information systems. To this end, the nonlinear properties and dynamics of QD lasers on silicon are investigated in depth by both theoretical analysis and experiment. This book aims at addressing four issues encountered in developing silicon PIC: 1) The instability of laser emission caused by the chip-scale back-reflection. During photonic integration, the chip-scale back-reflection is usually responsible for the generation of severe instability (i.e., coherence collapse) from the on-chip source. As a consequence, the transmission performance of the chip could be largely degraded. To overcome this issue, we investigate the nonlinear properties and dynamics of QD laser on Si in this book to understand how can it be applied to isolator-free photonic integration in which the expensive optical isolator can be avoided. Results show that the QD laser exhibits a high degree of tolerance for chip-scale back-reflections in absence of any instability, which is a promising solution for isolator-free applications. 2) The degradation of laser performance at a high operating temperature. In this era of Internet-of-Thing (IoT), about 40% of energy is consumed for cooling in the data center. In this context, it is important to develop a high-temperature continuous-wave (CW) emitted laser source. In this book, we introduce a single-mode distributed feedback (DFB) QD laser with a design of optical wavelength detuning (OWD). By taking advantage of the OWD technique and the high-performance QD with high thermal stability, all the static and dynamical performances of the QD device are improved when the operating temperature is high. This study paves the way for developing uncooled and isolator-free PIC. 3) The limited phase noise level and optical bandwidth of the laser are the bottlenecks for further increasing the transmission capacity. To improve the transmission capacity and meet the requirement of the next generation of high-speed optical communication, we introduce the QD-based optical frequency comb (OFC) laser in this book. Benefiting from the gain broadening effect and the low-noise properties of QD, the OFC laser is realized with high optical bandwidth and low phase noise. We also provide approaches to further improve the laser performance, including the external optical feedback and the optical injection. 4) Platform with rich optical nonlinearities is highly desired by future integrated quantum technologies. In this book, we investigate the nonlinear properties and four-wave mixing (FWM) of QD laser on Si. This study reveals that the FWM efficiency of QD laser is more than ten times higher than that of quantum-well laser, which gives insight into developing a QD-based silicon platform for quantum states of light generation. Based on the results in this book, scientists, researchers, and engineers can come up with an informed judgment in utilizing the QD laser for applications ranging from classical silicon PIC to integrated quantum technologies.

Author: David Roy-Guay
Publisher:
ISBN:
Category : Polarization (Light)
Languages : en
Pages : 178

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Author: Emad Alkhazraji
Publisher: Emad Alkhazraji
ISBN: 3659845094
Category : Technology & Engineering
Languages : en
Pages : 201

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Wavelength division multiplexed passive optical networks are perceived as the ultimate form of next-generation passive optical network that show promising outlooks in meeting the ever-growing demand of telecommunication capacities and internet traffic. In this book, an InAs/InP quantum dash laser is investigated as an ideal contender to meeting this demand owing to is broadband emission, which allows for expanding the utilizable bandwidth away from the over-exhausted C-band and to accommodating more subscribers for less capital expenditure. Firstly, the device is inspected as a tunable light source with a total emission-wavelength tuning range of 30 nm due to its inhomogeneous active region. Thereafter, the device is investigated in two-sectioned configurations to realize other monolithic devices. Lastly, the quantum dash active region is examined in terms of its electro-absorption (EA) and electro-optic (EO) characteristics. On another front, the quantum dash laser is employed to achieve the first demonstration of WDM transmission in the L-band over a single transmitter with an aggregate data rate of 384 Gbit/s with three simultaneous channels in DP-QPSK modulation scheme.

Author: Zhiming M. Wang
Publisher: Springer Science & Business Media
ISBN: 1461435706
Category : Science
Languages : en
Pages : 375

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Quantum dots as nanomaterials have been extensively investigated in the past several decades from growth to characterization to applications. As the basis of future developments in the field, this book collects a series of state-of-the-art chapters on the current status of quantum dot devices and how these devices take advantage of quantum features. Written by 56 leading experts from 14 countries, the chapters cover numerous quantum dot applications, including lasers, LEDs, detectors, amplifiers, switches, transistors, and solar cells. Quantum Dot Devices is appropriate for researchers of all levels of experience with an interest in epitaxial and/or colloidal quantum dots. It provides the beginner with the necessary overview of this exciting field and those more experienced with a comprehensive reference source.