Investigation of Growth, Structural and Electronic Properties of V_1tn2O_1tn3 Thin Films on Selected Substrates PDF Download

Author: Alexei Nateprov
Publisher:
ISBN:
Category :
Languages : en
Pages : 85

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Languages : en
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The present work is devoted to the experimental study of the MI transition in V2O3 thin films, grown on different substrates. The main goal of the work was to develop a technology of growth of V2O3 thin films on substrates with different electrical and structural properties (diamond and LiNbO3), designed for specific applications. The structural and electrical properties of the obtained films were characterized in detail with a special focus on their potential applications. The MIT of V2O3 was investigated by SAW using first directly deposited V2O3 thin film onto a LiNbO3 substrate.

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Category :
Languages : en
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Author: Lu Jiao
Publisher: Open Dissertation Press
ISBN: 9781361011973
Category : Science
Languages : en
Pages : 118

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This dissertation, "Growth of Transition Metal Dichalcogenide Thin Films by Molecular Beam Epitaxy" by Lu, Jiao, 焦璐, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Atomically thin transition metal dichalcogenides (TMD) have attracted intensive research interests due to their extraordinary properties and potential applications in electronics and optoelectronics. In this thesis, epitaxial growths of two-dimensional (2D) MoSe2 and WSe2 thin films were carried out in Molecular Beam Epitaxy (MBE). Multiple characterization techniques were employed to investigate thin films' structural, morphological, electronic and optical properties. A series of submonolayer MoSe2 coverage samples have been grown on highly ordered pyrolytic graphite (HOPG) substrate. Growth temperature and post-growth annealing temperature were seen to have obvious impacts on film's morphology and crystal quality. Layer-by-layer growth mode has been identified for the Van der Waals epitaxy of MoSe2 on HOPG. Dense networks of inversion domain boundaries (IDBs) have been observed in as-grown MoSe2 epifilms by scanning tunneling microscopy (STM) and transmission electron microscopy (TEM), and their density can be tuned by changing the MBE conditions. Scanning tunneling spectroscopy (STS) measurements reveal mid-gap electronic states associated with the IDB defects. STS measurements also reveal energy bandgaps of monolayer (ML) and bilayer (BL) MoSe2. ML WSe2 thin films were also grown at varying conditions on HOPG substrates through the Van der Waals epitaxy process and the growth characteristics were found similar to that of MoSe2. However, differences are also noted, particularly about the IDB defects. Contrary to MoSe2, as-grown WSe2 films do not contain the line defects. The reason behind such differences will be discussed. Finally, besides the STM/S studies about the morphological and electronic properties of MBE MoSe2 and WSe2 films, high quality samples have been synthesized on graphene-on-SiC substrate with reduced defect density and well-controlled thicknesses for some ex situ characterizations by photoluminescence and Raman spectroscopy methods. The results will be summarized and discussed in this thesis. Subjects: Molecular beam epitaxy Metallic films

Author: R.F.C. Farrow
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 572

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This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

Author: F. L. Vernon
Publisher:
ISBN:
Category :
Languages : en
Pages : 21

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The effects of a variety of parameters on the formation of metallic stearate films are discussed. Substrate cleaning techniques and the role of the spreading solvent are emphasized. A new method for the deposition of the initial organic monolayer is described; in many respects this method has proven superior to the original Langmuir-Blodgett technique. Reliable metaloxide tunneling junctions on the end of thin quartz rods were fabricated for configurations of the type Al-Al2O3-Mx. These junctions, used in studying the effect of microwave phonons on superconductive tunneling, proved difficult to make because of the small configurations required. Special techniques for handling these small structures are discussed. A new evaporator is described which will provide flexibility in fabricating thin film electronic devices. (Author).

Author: Klaus Wetzig
Publisher: John Wiley & Sons
ISBN: 3527606475
Category : Science
Languages : en
Pages : 390

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This up-to-date handbook covers the main topics of preparation, characterization and properties of complex metal-based layer systems. The authors -- an outstanding group of researchers -- discuss advanced methods for structure, chemical and electronic state characterization with reference to the properties of thin functional layers, such as metallization and barrier layers for microelectronics, magnetoresistive layers for GMR and TMR, sensor and resistance layers. As such, the book addresses materials specialists in industry, especially in microelectronics, as well as scientists, and can also be recommended for advanced studies in materials science, analytics, surface and solid state science.

Author: Nini Pryds
Publisher: Elsevier
ISBN: 9780128111666
Category : Technology & Engineering
Languages : en
Pages : 0

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Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena bridges the gap between thin film deposition and device development by exploring the synthesis, properties and applications of thin film interfaces. Part I deals with theoretical and experimental aspects of epitaxial growth, the structure and morphology of oxide-metal interfaces deposited with different deposition techniques and new developments in growth methods. Part II concerns analysis techniques for the electrical, optical, magnetic and structural properties of thin film interfaces. In Part III, the emphasis is on ionic and electronic transport at the interfaces of Metal-oxide thin films. Part IV discusses methods for tailoring metal oxide thin film interfaces for specific applications, including microelectronics, communication, optical electronics, catalysis, and energy generation and conservation. This book is an essential resource for anyone seeking to further their knowledge of metal oxide thin films and interfaces, including scientists and engineers working on electronic devices and energy systems and those engaged in research into electronic materials.

Author: Santosh Kumar Myana
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Transition metal oxide heterostructures are known to have shown a wide range of phenomenal properties such as superconductivity, colossal magnetoresistance and multiferroicity. The double perovskite Sr2FeMoO6 (SFMO) is reported to be a ferrimagnetic with high Curie temperature (410 - 450 K), which exhibits an appreciable low field magnetoresistance (LFMR) even at room temperature. Most of the thin film systems are prepared on single crystal substrates such as SrTiO3, LaAlO3, MgO and some limited compositions with few low index orientations available. Here, we used a throughput synthesis technique called Combinatorial Substrate Epitaxy , where we deposit thin films on isostructural polycrystalline substrates, using optimized deposition conditions. We investigate the deposition of SFMO thin films on three different polycrystalline substrates such as Sr2MgWO6 (SMWO), Ba2MgWO6 (BMWO) and Ca2MgWO6 (CMWO), and correlate the structural and electronic properties with the compositions, the strains and nature of defects.

Author: Xin Wang
Publisher:
ISBN: 9789178718078
Category :
Languages : en
Pages : 60

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