Investigation of Electromigration in Thin Film Aluminum at Low Temperatures PDF Download

Author: David W. Banton (CAPT, USAF.)
Publisher:
ISBN:
Category : Aluminum
Languages : en
Pages :

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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 892

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Author: David W. Banton
Publisher:
ISBN:
Category :
Languages : en
Pages : 109

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Book Description
This thesis project collects electromigration induced time to failure data from unglassed and glassed one percent silicon doped aluminum test patterns at four current densities: 4.5, 4.75, 5.5, and 6.25 mega-amps per square centimeter. At 4.5 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative thirteen and seventy degrees centigrade. From the data, the activation energy is calculated to be approximately 0.3 electron-volts. At 4.75 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative fifty and eighty degrees centigrade. From the data, the activation energy is calculated to be between approximately 0.3 electron-volts between ten and eighty degrees centigrade. At 5.5 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative fifty and twenty degrees centigrade. From the data, the activation energy is calculated to be between 0.35 and 0.43 volts for temperatures between negative seven and twenty degrees centigrade. At 6.25 mega-amps per square centimeter, glassed pattern time to failure data is collected between negative thirteen and eighty degrees centigrade. From the data, the activation energy is calculated to be approximately 0.3 electronvolts at temperatures between twenty and eighty degress centigrade. These ranges of activation energies indicate that surface electromigration is the dominant failure mechanism. Keywords: Electromigration; Low temperature; Silicon doped aluminum; Thin films; Aluminum.

Author: A. Gangulee
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 566

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Author: Georg Hass
Publisher: Elsevier
ISBN: 1483103315
Category : Science
Languages : en
Pages : 436

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Book Description
Physics of Thin Films: Advances in Research and Development, Volume 7 is a collection of papers about film growth and structure, optical properties, and semiconducting films. The book covers topics such as diffraction theory; film support and filter fabrication; aging, usage, and cleaning of filters; and properties and applications of III-V compound films. It also discusses topics such as the preparation of use and unbacked metal filters; electromigration in thin films; and the built-up molecular films and their applications. The text is recommended for physicists and engineers involved in thin film physics, especially those who would like to know more about the progresses in the field.

Author:
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ISBN:
Category : Power resources
Languages : en
Pages : 762

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Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.

Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 412

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Author: Klaus Wetzig
Publisher: John Wiley & Sons
ISBN: 3527606475
Category : Science
Languages : en
Pages : 388

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This up-to-date handbook covers the main topics of preparation, characterization and properties of complex metal-based layer systems. The authors -- an outstanding group of researchers -- discuss advanced methods for structure, chemical and electronic state characterization with reference to the properties of thin functional layers, such as metallization and barrier layers for microelectronics, magnetoresistive layers for GMR and TMR, sensor and resistance layers. As such, the book addresses materials specialists in industry, especially in microelectronics, as well as scientists, and can also be recommended for advanced studies in materials science, analytics, surface and solid state science.

Author: Jens Lienig
Publisher: Springer
ISBN: 3319735586
Category : Technology & Engineering
Languages : en
Pages : 171

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Book Description
The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.

Author: Wade H. Shafer
Publisher: Springer
ISBN:
Category : Education
Languages : en
Pages : 400

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Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thougtit that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 31 (thesis year 1986) a total of 11 ,480 theses titles trom 24 Canadian and 182 United States universities. We are sure that this broader base tor these titles reported will greatly enhance the value ot this important annual reterence work. While Volume 31 reports theses submitted in 1986, on occasion, certain univer sities do re port theses submitted in previousyears but not reported at the time.