Investigation of Dose Rate Dependent Electrical Activation of Implanted Dopants in Gallium Arsenide PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages : 27
Book Description
In references 1 and 2 the principal investigator and his collaborators have documented that a surprisingly large improvement in the electrical properties of silicon and sulfur implanted GaAs are realized if the implantations are carried out at low dose-rates. This work is the subject of a Navy Patent application (case 72,812). It seems likely that these phenomena are related to a dose-rate dependent damage accumulation mechanism in GaAs that has recently been reported on by a group at Oak Ridge National Laboratories. While the dose-rate effects can now be expected there is no understanding as to exactly why they occur nor can they be accurately predicted. This study seeks to shed light on these issues by performing spectroscopic measurements on silicon implanted GaAs samples and correlating these results with the implantation parameters and electrical properties of the samples.
Author: Publisher: ISBN: Category : Languages : en Pages : 27
Book Description
In references 1 and 2 the principal investigator and his collaborators have documented that a surprisingly large improvement in the electrical properties of silicon and sulfur implanted GaAs are realized if the implantations are carried out at low dose-rates. This work is the subject of a Navy Patent application (case 72,812). It seems likely that these phenomena are related to a dose-rate dependent damage accumulation mechanism in GaAs that has recently been reported on by a group at Oak Ridge National Laboratories. While the dose-rate effects can now be expected there is no understanding as to exactly why they occur nor can they be accurately predicted. This study seeks to shed light on these issues by performing spectroscopic measurements on silicon implanted GaAs samples and correlating these results with the implantation parameters and electrical properties of the samples.
Author: Publisher: ISBN: Category : Research Languages : en Pages : 1686
Book Description
Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.
Author: I. Yamada Publisher: Elsevier ISBN: 1483164047 Category : Technology & Engineering Languages : en Pages : 646
Book Description
Laser and Ion Beam Modification of Materials is a compilation of materials from the proceedings of the symposium U: Material Synthesis and Modification by Ion beams and Laser Beams. This collection discusses the founding of the KANSAI Science City in Japan, and the structures, equipment, and research projects of two institutions are discussed pertaining to eV-MeV ion beams. A description of ion beams as used in materials research and in manufacturing processes, along with trends in ion implantation technology in semiconductors, is discussed. Research into ion beams by China and its industrial uses in non-semiconductor area is noted. For industrial applications, developing technology in terms of high speed, large surface modifications and use of high doses is important. Thus, the development of different ion beam approaches is examined. Industrial applications of ion and laser processing are discussed as cluster beams are used in solid state physics and chemistry. Mention is made on a high power discharge pumped solid state physics (ArF) excimer laser as a potential light source for better material processing. Under ion beam material processing is nanofabrication using focused ion beams, important for research work in mesoscopic systems. Progress in the use of ion-beam mixing using kinetic energy of ion-beams to mingle with pre-deposited surface layers of substrate materials has shown promise. Advanced materials researchers and scientists, as well as academicians in the field of nuclear physics, will find this collection helpful.
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Author: I. Yamada
Author: American Ceramic Society
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