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Author: Seng Ghee Tan Publisher: Elsevier ISBN: 0857095889 Category : Technology & Engineering Languages : en Pages : 308
Book Description
This book provides an introduction to the physics of nanoelectronics, with a focus on the theoretical aspects of nanoscale devices. The book begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics, to facilitate the understanding of subsequent chapters. It goes on to encompass quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices.Theoretical methodology is developed using quantum mechanical and non-equilibrium Green's function (NEGF) techniques to calculate electronic currents and elucidate their transport properties at the atomic scale. The spin Hall effect is explained and its application to the emerging field of spintronics – where an electron's spin as well as its charge is utilised – is discussed. Topological dynamics and gauge potential are introduced with the relevant mathematics, and their application in nanoelectronic systems is explained. Graphene, one of the most promising carbon-based nanostructures for nanoelectronics, is also explored. - Begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics - Encompasses quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices - Comprehensively introduces topological dynamics and gauge potential with the relevant mathematics, and extensively discusses their application in nanoelectronic systems
Author: Seng Ghee Tan Publisher: Elsevier ISBN: 0857095889 Category : Technology & Engineering Languages : en Pages : 308
Book Description
This book provides an introduction to the physics of nanoelectronics, with a focus on the theoretical aspects of nanoscale devices. The book begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics, to facilitate the understanding of subsequent chapters. It goes on to encompass quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices.Theoretical methodology is developed using quantum mechanical and non-equilibrium Green's function (NEGF) techniques to calculate electronic currents and elucidate their transport properties at the atomic scale. The spin Hall effect is explained and its application to the emerging field of spintronics – where an electron's spin as well as its charge is utilised – is discussed. Topological dynamics and gauge potential are introduced with the relevant mathematics, and their application in nanoelectronic systems is explained. Graphene, one of the most promising carbon-based nanostructures for nanoelectronics, is also explored. - Begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics - Encompasses quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices - Comprehensively introduces topological dynamics and gauge potential with the relevant mathematics, and extensively discusses their application in nanoelectronic systems
Author: Tero T. Heikkilä Publisher: OUP Oxford ISBN: 0191654469 Category : Science Languages : en Pages : 296
Book Description
Advances in nanotechnology have allowed physicists and engineers to miniaturize electronic structures to the limit where finite-size related phenomena start to impact their properties. This book discusses such phenomena and models made for their description. The book starts from the semiclassical description of nonequilibrium effects, details the scattering theory used for quantum transport calculations, and explains the main interference effects. It also describes how to treat fluctuations and correlations, how interactions affect transport through small islands, and how superconductivity modifies these effects. The last two chapters describe new emerging fields related with graphene and nanoelectromechanics. The focus of the book is on the phenomena rather than formalism, but the book still explains in detail the main models constructed for these phenomena. It also introduces a number of electronic devices, including the single-electron transistor, the superconducting tunnel junction refrigerator, and the superconducting quantum bit.
Author: Vinod Kumar Khanna Publisher: CRC Press ISBN: 1351204653 Category : Science Languages : en Pages : 753
Book Description
This introductory text develops the reader’s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems such as quantum dots, quantum wires, and quantum wells together with Landauer-Büttiker formalism and non-equilibrium Green’s function approach. The coverage encompasses nanofabrication techniques and characterization tools followed by a comprehensive exposition of nanoelectronic devices including resonant tunneling diodes, nanoscale MOSFETs, carbon nanotube FETs, high-electron-mobility transistors, single-electron transistors, and heterostructure optoelectronic devices. The writing throughout is simple and straightforward, with clearly drawn illustrations and extensive self-study exercises for each chapter. Introduces the basic concepts underlying the operation of nanoelectronic devices. Offers a broad overview of the field, including state-of-the-art developments. Covers the relevant quantum and solid-state physics and nanoelectronic device principles. Written in lucid language with accessible mathematical treatment. Includes extensive end-of-chapter exercises and many insightful diagrams.
Author: Edward L. Wolf Publisher: John Wiley & Sons ISBN: 3527684182 Category : Technology & Engineering Languages : en Pages : 336
Book Description
Long awaited new edition of this highly successful textbook, provides once more a unique introduction to the concepts, techniques and applications of nanoscale systems by covering its entire spectrum up to recent findings on graphene.
Author: Edward L. Wolf Publisher: John Wiley & Sons ISBN: 3527665382 Category : Technology & Engineering Languages : en Pages : 473
Book Description
A tutorial coverage of electronic technology, starting from the basics of condensed matter and quantum physics. Experienced author Ed Wolf presents established and novel devices like Field Effect and Single Electron Transistors, and leads the reader up to applications in data storage, quantum computing, and energy harvesting. Intended to be self-contained for students with two years of calculus-based college physics, with corresponding fundamental knowledge in mathematics, computing and chemistry.
Author: Manoj Kumar Majumder Publisher: CRC Press ISBN: 1000223078 Category : Science Languages : en Pages : 373
Book Description
Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.
Author: Jaap Hoekstra Publisher: CRC Press ISBN: 981474557X Category : Science Languages : en Pages : 349
Book Description
Today, the concepts of single-electron tunneling (SET) are used to understand and model single-atom and single-molecule nanoelectronics. The characteristics of nanoelectronic devices, especially SET transistors, can be understood on the basis of the physics of nanoelectronic devices and circuit models. A circuit theory approach is necessary for considering possible integration with current microelectronic circuitry. To explain the properties and possibilities of SET devices, this book follows an approach to modeling these devices using electronic circuit theory. All models and equivalent circuits are derived from the first principles of circuit theory. Based on energy conservation, the circuit model of SET is an impulsive current source, and modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a single junction. In addition, this edition differs from the previous one by elaborating on the section on spice simulations and providing a spice simulation on the SET electron box circuit, including the spice netlist. Also, a complete, new proof of the two-capacitor problem in circuit theory is presented; the importance of this proof in understanding energy conservation in SET circuits cannot be underestimated. This book will be very useful for advanced undergraduate- and graduate-level students of electrical engineering and nanoelectronics and researchers in nanotechnology, nanoelectronic device physics, and computer science. Only book modeling both single-electron tunneling and many electron tunneling from the points of view of electronics; starting from experiments, via a physics description, working towards a circuit description; and based on energy conservation, in electrical circuits, developing the impulse circuit model for single-electron tunneling.
Author: Joachim Knoch Publisher: Walter de Gruyter GmbH & Co KG ISBN: 3110575558 Category : Science Languages : en Pages : 475
Book Description
The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.
Author: Hassan Raza Publisher: Springer Nature ISBN: 3030325733 Category : Science Languages : en Pages : 279
Book Description
This book covers the state of the art in the theoretical framework, computational modeling, and the fabrication and characterization of nanoelectronics devices. It addresses material properties, device physics, circuit analysis, system design, and a range of applications. A discussion on the nanoscale fabrication, characterization and metrology is also included. The book offers a valuable resource for researchers, graduate students, and senior undergraduate students in engineering and natural sciences, who are interested in exploring nanoelectronics from materials, devices, systems, and applications perspectives.
Author: Seng Ghee Tan
Author: Seng Ghee Tan
Author: Tero T. Heikkilä
Author: Vladimir V. Mitin
Author: Vinod Kumar Khanna
Author: Edward L. Wolf
Author: Edward L. Wolf
Author: Manoj Kumar Majumder
Author: Jaap Hoekstra
Author: Joachim Knoch
Author: Hassan Raza