In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide PDF full book. Access full book title In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide by . Download full books in PDF and EPUB format.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEM - Ion Accelerator Facility at Argonne National Laboratory. The ion bombardments (50 keV Ar and Kr) and the microscopy have been carried out at temperatures ranging from 30 to 300°K. Ion fluences ranged from 2 x 1011 to 5 x 1013 ions cm−2. Direct-impact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30°K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250°K. Post-implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears. 14 refs., 3 figs., 1 tab.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEM - Ion Accelerator Facility at Argonne National Laboratory. The ion bombardments (50 keV Ar and Kr) and the microscopy have been carried out at temperatures ranging from 30 to 300°K. Ion fluences ranged from 2 x 1011 to 5 x 1013 ions cm−2. Direct-impact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30°K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250°K. Post-implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears. 14 refs., 3 figs., 1 tab.
Author: Publisher: ISBN: Category : Aeronautics Languages : en Pages : 380
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Britt Anne Turkot Publisher: ISBN: Category : Languages : en Pages :
Book Description
The implantation damage behavior of GaAs/Al$sb{0.6}$Ga$sb{0.4}$As multilayer structures has been investigated by implanting samples with 1 MeV Kr$sp+$, 1.5 MeV Kr$sp+$, 1 MeV Ar$sp+$, and 1.5 MeV Kr$sp{++}$ at 77 K. The resulting damage state was analyzed using low-, room-, and high-temperature Rutherford backscattering spectrometry ion channeling and room-temperature transmission electron microscopy techniques. In all implantations the level of damage produced in these structures was found to increase with depth, and the damage state produced in samples containing single- and double-layers of $rm Alsb{0.6}Gasb{0.4}As$ was independent of the internal interfaces. The observed damage can be explained using a model which relates the amount of implantation-induced disorder to the number of cascade-producing events in a given region. This model can also account for results in the GaAs/AlAs system, such as the greater amount of mixing which is observed to occur at deeper AlAs interfaces and also that amorphization of AlAs layers initiates at the interfaces. Room temperature recovery of partially crystalline $rm Alsb{0.6}Gasb{0.4}As$ was observed to occur following low temperature implantation. Depending on the implantation condition, this room temperature recovery can lead to the development of planar defects. In addition, the extent of recovery in $rm Alsb{0.6}Gasb{0.4}As$ was found to be related to the original damage state, with more complex damage requiring higher annealing temperatures. Misoriented crystallites were produced by the recrystallization of GaAs implanted at room temperature to a dose far exceeding that required for low temperature amorphization. Continued ion impacts produced crystalline nucler which increased in size as a result of the enhanced atomic motion produced by the energetic ions. Similar crystallites were found in TEM foils which remained in the as-thinned condition for several months. In these samples, recrystallization resulted from a mechanism involving low energy events with the ability to induce bond rearrangement.
Author: 
Author: 
Author: 
Author: 
Author: Britt Anne Turkot
Author: 
Author: 
Author: 
Author: 
Author: 
Author: Michael J. Aziz