Author: Boon Tong GohPublisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 378
Book Description
Hydrogenated Amorphous Silicon by Pulsed Plasma Enhanced Chemical Vapour Deposition Technique
Author: Boon Tong GohPublisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 378
Book Description
Structural Properties of Hydrogenated Amorphous Silicon (a-Si:H) Thin Film Grown Via Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD)
Author: Hasbullah Anthony HasbiPublisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages :
Book Description
Plasma Deposition of Amorphous Silicon-Based Materials
Author: Pio CapezzutoPublisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Carbide, Nitride and Boride Materials Synthesis and Processing
Author: A.W. WeimerPublisher: Springer Science & Business Media
ISBN: 9400900716
Category : Technology & Engineering
Languages : en
Pages : 675
Book Description
Carbide, Nitride and Boride Materials Synthesis and Processing is a major reference text addressing methods for the synthesis of non-oxides. Each chapter has been written by an expert practising in the subject area, affiliated with industry, academia or government research, thus providing a broad perspective of information for the reader. The subject matter ranges from materials properties and applications to methods of synthesis including pre- and post-synthesis processing. Although most of the text is concerned with the synthesis of powders, chapters are included for other materials such as whiskers, platelets, fibres and coatings. Carbide, Nitride and Boride Materials Synthesis and Processing is a comprehensive overview of the subject and is suitable for practitioners in the industry as well as those looking for an introduction to the field. It will be of interest to chemical, mechanical and ceramic engineers, materials scientists and chemists in both university and industrial environments working on or with refractory carbides, nitrides and borides.
High-rate growth of hydrogenated amorphous and microcrystalline silicon for thin-film silicon solar cells using dynamic very-high frequency plasma-enhanced chemical vapor deposition
Author: Thomas ZimmermannPublisher: Forschungszentrum Jülich
ISBN: 3893368922
Category :
Languages : en
Pages : 143
Book Description
Dependence of Intrinsic Stress in Hydrogenated Amorphous Silicon on Excitation Frequency in a Plasma-enhanced Chemical Vapor Deposition Process
Author: Hydrogenated Amorphous Silicon Prepared by D.c. Plasma Enhanced Chemical Vapour Deposition of Helium Diluted Silane
Author: Roszairi HaronPublisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 320
Book Description
Growth and Characterization of Hydrogenated Amorphous Silicon Prepared Using a Combined Hot Wire and Electron Cyclotron Resonance Plasma Deposition Technique
Author: Matthew Alan RingPublisher:
ISBN:
Category :
Languages : en
Pages : 94
Book Description
Hot Wire Chemical Vapor Deposition (HWCVD) is an emerging technology in semiconductor materials thin film deposition due to the high growth rates and reasonable electronic properties attainable using this method. To improve the electronic characteristics of material grown by the HWCVD method, neutral ion bombardment during growth was introduced as it is shown to be beneficial in Plasma Enhanced Chemical Vapor Deposition (PECVD). Neutral ion bombardment was accomplished by using remote Electron Cyclotron Resonance (ECR) plasma and the entire deposition technique is termed ECR-HWCVD. The ECR-HWCVD films were compared to HWCVD materials deposited without ion bombardment grown at similar conditions in the same reactor using a 10.5 cm filament to substrate distance to minimize substrate heating by radiation during deposition. The growth rate is halved when ion bombardment is added to HWCVD, however it remains four times greater than the highest quality ECR-PECVD films. Also, ECR-HWCVD material exhibited better electronic properties as shown by Urbach energy, photosensitivity, hydrogen content, microstructure parameters, and space charge limited current defect measurements. In addition, the effect of substrate temperature on hydrogen content and material microstructure was investigated. Both hydrogen content and the microstructure parameter R decreased as substrate temperature increased; and when ion bombardment was added to the deposition conditions, the microstructure parameter decreased regardless of substrate temperature.
Plasma Deposition of Amorphous Silicon-based Materials
Author: Giovanni BrunoPublisher:
ISBN: 9780121379407
Category : Science
Languages : en
Pages : 324
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
High-quality Amorphous-crystalline Silicon Heterostructures Using the Grid-based Triode Radio-frequency Plasma Enhanced Chemical Vapour Deposition Method
Author: Pratish MahtaniPublisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
The amorphous - crystalline silicon heterojunction (SHJ) represents a new paradigm in crystalline silicon (c-Si) photovoltaics (PV). To achieve the 27% efficiency target for SHJ PV, defects in the silicon heterointerface must be minimized by growing high-quality hydrogenated amorphous silicon (a-Si:H) onto the c-Si surfaces without deposition-related damage. Typically, a-Si:H is deposited using radio-frequency (RF) plasma enhanced chemical vapour deposition (PECVD), which in its conventional configuration directly exposes the c-Si growth surface to the ignited plasma. In this thesis, silicon heterostructures prepared by the grid-based triode RF PECVD method is investigated for the first time. The triode method allows for high-quality a-Si:H growth with the c-Si surfaces shielded from any potential plasma damage. Using a custom-built configurable PECVD facility, a systematic study was conducted and it was demonstrated that the triode method affords the preparation of a-Si:H with excellent bulk film quality and state-of-the-art passivation for c-Si surfaces. Using the triode method, an effective minority carrier lifetime (