Author: Abdul-Azeez Sulaiman Al-OmarPublisher:
ISBN:
Category : Electron transport
Languages : en
Pages : 754
Book Description
Hot Electron Transport in Nanometer Scale Graded Ternary III-V Semiconductor Devices
Author: Abdul-Azeez Sulaiman Al-OmarPublisher:
ISBN:
Category : Electron transport
Languages : en
Pages : 754
Book Description
Hot electron transport in nanometer scale grated ternary III - V semiconductor devices
Author: Abdul Azeez Sulaiman al-OmarPublisher:
ISBN:
Category :
Languages : en
Pages : 370
Book Description
Two Dimensional Monte Carlo Simulations of Submicron Unipolar and Bipolar Compound Semiconductor Devices with Ballistic Injection Cathodes
Author: Steven Richard WeinzierlPublisher:
ISBN:
Category :
Languages : en
Pages : 552
Book Description
American Doctoral Dissertations
Author: Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 728
Book Description
Electron Transport in III-V Semiconductor Devices
Author: D. A. PooleIndex to American Doctoral Dissertations
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 1252
Book Description
Chemical Abstracts
Author: Physics Briefs
Author: Physical Properties of III-V Semiconductor Compounds
Author: Sadao AdachiPublisher: John Wiley & Sons
ISBN: 9780471573296
Category : Science
Languages : en
Pages : 342
Book Description
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Polarization Effects in Semiconductors
Author: Debdeep JenaPublisher: Springer Science & Business Media
ISBN: 0387368310
Category : Science
Languages : en
Pages : 523
Book Description
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.