Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Smart Power ICs PDF full book. Access full book title Smart Power ICs by Bruno Murari. Download full books in PDF and EPUB format.
Author: Bruno Murari Publisher: Springer Science & Business Media ISBN: 9783540432388 Category : Design Languages : en Pages : 598
Book Description
This book provides a survey of the state of the art of technology and future trends in the new family of Smart Power ICs and describes design and applications in a variety of fields ranging from automotive to telecommunications, reliability evaluation and qualification procedures. The book is a valuable source of information and reference for both power IC design specialists and to all those concerned with applications, the development of digital circuits and with system architecture.
Author: Bruno Murari Publisher: Springer Science & Business Media ISBN: 9783540432388 Category : Design Languages : en Pages : 598
Book Description
This book provides a survey of the state of the art of technology and future trends in the new family of Smart Power ICs and describes design and applications in a variety of fields ranging from automotive to telecommunications, reliability evaluation and qualification procedures. The book is a valuable source of information and reference for both power IC design specialists and to all those concerned with applications, the development of digital circuits and with system architecture.
Author: Pietro Buccella Publisher: Springer ISBN: 3319743821 Category : Technology & Engineering Languages : en Pages : 195
Book Description
This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools. The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis. Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific protections.
Author: Muhammad H. Rashid Publisher: Elsevier ISBN: 0080467652 Category : Technology & Engineering Languages : en Pages : 1189
Book Description
Power electronics, which is a rapidly growing area in terms of research and applications, uses modern electronics technology to convert electric power from one form to another, such as ac-dc, dc-dc, dc-ac, and ac-ac with a variable output magnitude and frequency. Power electronics has many applications in our every day life such as air-conditioners, electric cars, sub-way trains, motor drives, renewable energy sources and power supplies for computers. This book covers all aspects of switching devices, converter circuit topologies, control techniques, analytical methods and some examples of their applications.* 25% new content* Reorganized and revised into 8 sections comprising 43 chapters* Coverage of numerous applications, including uninterruptable power supplies and automotive electrical systems* New content in power generation and distribution, including solar power, fuel cells, wind turbines, and flexible transmission
Author: Tobias Erlbacher Publisher: Springer ISBN: 3319005006 Category : Technology & Engineering Languages : en Pages : 235
Book Description
The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
Author: Ali Emadi Publisher: CRC Press ISBN: 135183679X Category : Technology & Engineering Languages : en Pages : 909
Book Description
Initially, the only electric loads encountered in an automobile were for lighting and the starter motor. Today, demands on performance, safety, emissions, comfort, convenience, entertainment, and communications have seen the working-in of seemingly innumerable advanced electronic devices. Consequently, vehicle electric systems require larger capacities and more complex configurations to deal with these demands. Covering applications in conventional, hybrid-electric, and electric vehicles, the Handbook of Automotive Power Electronics and Motor Drives provides a comprehensive reference for automotive electrical systems. This authoritative handbook features contributions from an outstanding international panel of experts from industry and academia, highlighting existing and emerging technologies. Divided into five parts, the Handbook of Automotive Power Electronics and Motor Drives offers an overview of automotive power systems, discusses semiconductor devices, sensors, and other components, explains different power electronic converters, examines electric machines and associated drives, and details various advanced electrical loads as well as battery technology for automobile applications. As we seek to answer the call for safer, more efficient, and lower-emission vehicles from regulators and consumer insistence on better performance, comfort, and entertainment, the technologies outlined in this book are vital for engineering advanced vehicles that will satisfy these criteria.
Author: Wai-Kai Chen Publisher: CRC Press ISBN: 0203011503 Category : Technology & Engineering Languages : en Pages : 390
Book Description
As their name implies, VLSI systems involve the integration of various component systems. While all of these components systems are rooted in semiconductor manufacturing, they involve a broad range of technologies. This volume of the Principles and Applications of Engineering series examines the technologies associated with VLSI systems, including
Author: Steven H. Voldman Publisher: John Wiley & Sons ISBN: 0470747269 Category : Technology & Engineering Languages : en Pages : 411
Book Description
Electrostatic discharge (ESD) failure mechanisms continue to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a failure analysis and case-study approach. It provides a clear insight into the physics of failure from a generalist perspective, followed by investigation of failure mechanisms in specific technologies, circuits, and systems. The book is unique in covering both the failure mechanism and the practical solutions to fix the problem from either a technology or circuit methodology. Look inside for extensive coverage on: failure analysis tools, EOS and ESD failure sources and failure models of semiconductor technology, and how to use failure analysis to design more robust semiconductor components and systems; electro-thermal models and technologies; the state-of-the-art technologies discussed include CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, gallium arsenide (GaAs), gallium nitride (GaN), magneto-resistive (MR) , giant magneto-resistors (GMR), tunneling magneto-resistor (TMR), devices; micro electro-mechanical (MEM) systems, and photo-masks and reticles; practical methods to use failure analysis for the understanding of ESD circuit operation, temperature analysis, power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics, (connecting the theoretical to the practical analysis); the failure of each key element of a technology from passives, active elements to the circuit, sub-system to package, highlighted by case studies of the elements, circuits and system-on-chip (SOC) in today’s products. ESD: Failure Mechanisms and Models is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic era.
Author: Yue Fu Publisher: CRC Press ISBN: 1466583835 Category : Technology & Engineering Languages : en Pages : 364
Book Description
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Author: Bruno Murari
Author: Bruno Murari
Author: Muhammed Ayman Shibib
Author: Pietro Buccella
Author: Muhammad H. Rashid
Author: Tobias Erlbacher
Author: 
Author: Ali Emadi
Author: Wai-Kai Chen
Author: Steven H. Voldman
Author: Yue Fu