Index of Conference Proceedings PDF Download

Author: British Library. Document Supply Centre
Publisher:
ISBN:
Category : Conference proceedings
Languages : en
Pages : 870

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Author:
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ISBN:
Category : Physics
Languages : en
Pages : 1170

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Category : Electrical engineering
Languages : en
Pages : 1860

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Author: N. Miura
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 960

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As the proceedings of the most important and prestigious conference in the field of semiconductor physics, this book contains the latest information on the progress of semiconductor physics. Almost 1000 contributed papers address the full range of current topics. The special symposium deals with the interface between the fundamentals and device applications and tries to predict the developments in semiconductor physics, semiconductor materials and device applications in the 21st century. A wide range of contributions represent the forefront of academic and industrial research.

Author:
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Category : Electric engineering
Languages : en
Pages : 2332

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Author: Debashis Dutta
Publisher: Springer Nature
ISBN: 9813297751
Category : Technology & Engineering
Languages : en
Pages : 1004

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This book comprises select proceedings of the International Conference on VLSI, Communication and Signal processing (VCAS 2018). It looks at latest research findings in VLSI design and applications. The book covers a wide range of topics in electronics and communication engineering, especially in the area of microelectronics and VLSI design, communication systems and networks, and image and signal processing. The contents of this book will be useful to researchers and professionals alike.

Author: Alev Devrim Güçlü
Publisher: Springer
ISBN: 3662446111
Category : Science
Languages : en
Pages : 181

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This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of graphene quantum dots, electron-electron interaction, magnetic properties and optical properties of gated graphene nanostructures. The electronic, optical and magnetic properties of the graphene quantum dots as a function of size, shape, type of edge and carrier density are considered. Special attention is paid to the understanding of edges and the emergence of edge states for zigzag edges. Atomistic tight binding and effective mass approaches to single particle calculations are performed. Furthermore, the theoretical and numerical treatment of electron-electron interactions at the mean-field, HF, DFT and configuration-interaction level is described in detail.

Author: Hans-Christian Stahl
Publisher: Springer Science & Business Media
ISBN: 3540231641
Category : Technology & Engineering
Languages : en
Pages : 579

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Presents experiment, theory and technology in a unified manner. Contains numerous illustrations, tables and references as well as carefully selected problems for students. Surveys the fascinating historical development of the field.

Author: Cristian Zambelli
Publisher: Mdpi AG
ISBN: 9783036530123
Category : Technology & Engineering
Languages : en
Pages : 144

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Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today "3D" means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement.

Author: Zhe Chuan Feng
Publisher: Springer Science & Business Media
ISBN: 9783540206668
Category : Science
Languages : en
Pages : 480

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In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.