Author: National Aeronautics and Space Administration (NASA) Publisher: Createspace Independent Publishing Platform ISBN: 9781722437343 Category : Languages : en Pages : 96
Book Description
A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW. Connolly, J. C. and Carlin, D. B. and Ettenberg, M. Unspecified Center...
Author: National Aeronautics and Space Administration (NASA) Publisher: Createspace Independent Publishing Platform ISBN: 9781723146428 Category : Languages : en Pages : 184
Book Description
A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described. Connolly, J. C. and Goldstein, B. and Pultz, G. N. and Slavin, S. E. and Carlin, D. B. and Ettenberg, M. Unspecified Center ALUMINUM GALLIUM ARSENIDES; COMPUTERIZED SIMULATION; DIODES; ELECTRO-OPTICS; HIGH POWER LASERS; LASER APPLICATIONS; ASTIGMATISM; BRAGG CELLS; ELECTRIC CURRENT; FAR FIELDS; MODULATION; SERVICE LIFE; SUBSTRATES...