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Author: Peng Cheng Publisher: ISBN: Category : Bipolar transistors Languages : en Pages :
Book Description
The importance of high frequency noise performance is increasing in advanced bipolar and complementary metal-oxide semiconductor (BiCMOS) technologies because of the high demands of radio frequency (RF) and mixed-signal integrated circuits used in the 5G communication, automatic-driving sensors and internet of things (IOT) applications. While the characterization and modeling of high frequency noise of BiCMOS transistors have been a topic for many years, some important issues have not been clarified. For example, the noise correlation is not well predicted for bipolar devices, the excess noise factor is not well understood for MOSFET devices and the temperature dependence of high frequency noise in BiCMOS devices is not well studied. Focused on these issues, this research establishes the approach to extract the noise transit time from the high current compact model (HICUM), demonstrates an efficient methodology for high frequency noise prediction for silicon-germanium heterojunction bipolar transistors (SiGe HBTs) and validates the prediction methodology over size, bias and temperature. One of the issues of high frequency noise modeling of bipolar transistors is the noise correlation effect. This research explores the physical origin of high frequency noise correlation, studies the noise model of SiGe HBTs and creates an approach to extract the noise transit time from the HICUM compact model. The extracted noise transit time is validated by the tuner-based noise measurement results of sample SiGe HBTs by comparing the four noise parameters between the calculated and measured data over transistor size, bias and temperature. The results show that the noise transit time can be independent of frequency but dependent on bias and temperature. Furthermore, a complete high frequency noise prediction system is established. Based on the extraction methodology of the noise transit time from the HICUM model, this dissertation demonstrates a low-cost and time-friendly methodology to predict the full high frequency noise properties of the bipolar devices directly from the S-parameter measurement, DC measurement and the parameters from the HICUM model without the tuner-based noise measurement. Compared with the conventional tuner-based noise measurement, this methodology can save the measurement time as well as achieve a good accuracy. For MOSFET devices, the importance of excess noise factor is increasing with the transistor size scaling down to sub-100nm for high frequency noise modeling, but it has not been well studied so far. This research analyzes the excess noise factor based on the device physics and characterization results, investigates the noise sources contribution and models the high frequency noise based on Y-parameter methodology.
Author: Peng Cheng Publisher: ISBN: Category : Bipolar transistors Languages : en Pages :
Book Description
The importance of high frequency noise performance is increasing in advanced bipolar and complementary metal-oxide semiconductor (BiCMOS) technologies because of the high demands of radio frequency (RF) and mixed-signal integrated circuits used in the 5G communication, automatic-driving sensors and internet of things (IOT) applications. While the characterization and modeling of high frequency noise of BiCMOS transistors have been a topic for many years, some important issues have not been clarified. For example, the noise correlation is not well predicted for bipolar devices, the excess noise factor is not well understood for MOSFET devices and the temperature dependence of high frequency noise in BiCMOS devices is not well studied. Focused on these issues, this research establishes the approach to extract the noise transit time from the high current compact model (HICUM), demonstrates an efficient methodology for high frequency noise prediction for silicon-germanium heterojunction bipolar transistors (SiGe HBTs) and validates the prediction methodology over size, bias and temperature. One of the issues of high frequency noise modeling of bipolar transistors is the noise correlation effect. This research explores the physical origin of high frequency noise correlation, studies the noise model of SiGe HBTs and creates an approach to extract the noise transit time from the HICUM compact model. The extracted noise transit time is validated by the tuner-based noise measurement results of sample SiGe HBTs by comparing the four noise parameters between the calculated and measured data over transistor size, bias and temperature. The results show that the noise transit time can be independent of frequency but dependent on bias and temperature. Furthermore, a complete high frequency noise prediction system is established. Based on the extraction methodology of the noise transit time from the HICUM model, this dissertation demonstrates a low-cost and time-friendly methodology to predict the full high frequency noise properties of the bipolar devices directly from the S-parameter measurement, DC measurement and the parameters from the HICUM model without the tuner-based noise measurement. Compared with the conventional tuner-based noise measurement, this methodology can save the measurement time as well as achieve a good accuracy. For MOSFET devices, the importance of excess noise factor is increasing with the transistor size scaling down to sub-100nm for high frequency noise modeling, but it has not been well studied so far. This research analyzes the excess noise factor based on the device physics and characterization results, investigates the noise sources contribution and models the high frequency noise based on Y-parameter methodology.
Author: Michael Reisch Publisher: Springer Science & Business Media ISBN: 364255900X Category : Technology & Engineering Languages : en Pages : 671
Book Description
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author: Peter Ashburn Publisher: John Wiley & Sons ISBN: 0470090731 Category : Technology & Engineering Languages : en Pages : 286
Book Description
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Author: Niccolò Rinaldi Publisher: River Publishers ISBN: 8793519613 Category : Technology & Engineering Languages : en Pages : 378
Book Description
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author: John D. Cressler Publisher: Artech House ISBN: 9781580535991 Category : Science Languages : en Pages : 592
Book Description
This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Author: Michael Schrter Publisher: World Scientific ISBN: 981427321X Category : Technology & Engineering Languages : en Pages : 753
Book Description
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Author: John D. Cressler Publisher: CRC Press ISBN: 1351834762 Category : Technology & Engineering Languages : en Pages : 195
Book Description
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
Author: Peng Cheng
Author: Peng Cheng
Author: Francesco Vitale
Author: Michael Reisch
Author: Peter Ashburn
Author: Niccolò Rinaldi
Author: B. Gunnar Malm
Author: John D. Cressler
Author: Michael Schrter
Author: Staffan Bruce
Author: John D. Cressler