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High Efficiency RF Power Amplifiers in CMOS for Low Power Wireless Communication

High Efficiency RF Power Amplifiers in CMOS for Low Power Wireless Communication PDF Author: Iqbal Singh Bhatti
Publisher:
ISBN:
Category :
Languages : en
Pages : 158

Book Description


High Efficiency RF Power Amplifiers in CMOS for Low Power Wireless Communication

High Efficiency RF Power Amplifiers in CMOS for Low Power Wireless Communication PDF Author: Iqbal Singh Bhatti
Publisher:
ISBN:
Category :
Languages : en
Pages : 158

Book Description


RF Power Amplifiers for Mobile Communications

RF Power Amplifiers for Mobile Communications PDF Author: Patrick Reynaert
Publisher: Springer Science & Business Media
ISBN: 1402051174
Category : Technology & Engineering
Languages : en
Pages : 259

Book Description
This book tackles both high efficiency and high linearity power amplifier (PA) design in low-voltage CMOS. With its emphasis on theory, design and implementation, the book offers a guide for those actively involved in the design of fully integrated CMOS wireless transceivers. Offering mathematical background, as well as intuitive insight, the book is essential reading for RF design engineers and researchers and is also suitable as a text book.

Linear CMOS RF Power Amplifiers for Wireless Applications

Linear CMOS RF Power Amplifiers for Wireless Applications PDF Author: Paulo Augusto Dal Fabbro
Publisher: Springer Science & Business Media
ISBN: 9048193613
Category : Technology & Engineering
Languages : en
Pages : 171

Book Description
Advances in electronics have pushed mankind to create devices, ranging from - credible gadgets to medical equipment to spacecraft instruments. More than that, modern society is getting used to—if not dependent on—the comfort, solutions, and astonishing amount of information brought by these devices. One ?eld that has continuously bene?tted from those advances is the radio frequency integrated c- cuit (RFIC) design, which in its turn has promoted countless bene?ts to the mankind as a payback. Wireless communications is one prominent example of what the - vances in electronics have enabled and their consequences to our daily life. How could anyone back in the eighties think of the possibilities opened by the wireless local area networks (WLANs) that can be found today in a host of places, such as public libraries, coffee shops, trains, to name just a few? How can a youngster, who lives this true WLAN experience nowadays, imagine a world without it? This book dealswith the design oflinearCMOS RF PowerAmpli?ers(PAs). The RF PA is a very important part of the RF transceiver, the device that enables wireless communications. Two important aspects that are key to keep the advances in RF PA design at an accelerate pace are treated: ef?ciency enhancement and frequen- tunable capability. For this purpose, the design of two different integrated circuits realizedina0. 11μmtechnologyispresented,eachoneaddressingadifferentaspect. With respect to ef?ciency enhancement, the design of a dynamic supply RF power ampli?er is treated, making up the material of Chaps. 2 to 4.

Advances in Analog and RF IC Design for Wireless Communication Systems

Advances in Analog and RF IC Design for Wireless Communication Systems PDF Author: Mustafa Acar
Publisher: Elsevier Inc. Chapters
ISBN: 0128064501
Category : Technology & Engineering
Languages : en
Pages : 51

Book Description
This chapter presents high-efficiency power amplifiers (PAs) for wireless infrastructure. It starts by stating the importance of high efficiency and the historical evolution in base station PA concepts. It then introduces the current solution, the Doherty PA. After explaining the fundamentals of the Doherty PA, a novel implementation achieving more than 35% drain efficiency across a 6dB power back-off range and up to 20W peak power between 1.7 and 2.3GHz is given. Afterwards, a future PA concept, switch-mode outphasing PA, is introduced. Theory and implementation details of a class-E outphasing PA achieving more than 60% drain efficiency across a 6dB power back-off range and up to 19W peak power between 1800 and 2050MHz is explained. By the end of the chapter, an essential part of switch-mode PAs, high voltage (up to 10V) and high frequency (up to 4GHz) drivers are presented.

High-Linearity CMOS RF Front-End Circuits

High-Linearity CMOS RF Front-End Circuits PDF Author: Yongwang Ding
Publisher: Springer Science & Business Media
ISBN: 0387238018
Category : Technology & Engineering
Languages : en
Pages : 142

Book Description
This book focuses on high performance radio frequency integrated circuits (RF IC) design in CMOS. 1. Development of radio frequency ICs Wireless communications has been advancing rapidly in the past two decades. Many high performance systems have been developed, such as cellular systems (AMPS, GSM, TDMA, CDMA, W-CDMA, etc. ), GPS system (global po- tioning system) and WLAN (wireless local area network) systems. The rapid growth of VLSI technology in both digital circuits and analog circuits provides benefits for wireless communication systems. Twenty years ago not many p- ple could imagine millions of transistors in a single chip or a complete radio for size of a penny. Now not only complete radios have been put in a single chip, but also more and more functions have been realized by a single chip and at a much lower price. A radio transmits and receives electro-magnetic signals through the air. The signals are usually transmitted on high frequency carriers. For example, a t- ical voice signal requires only 30 Kilohertz bandwidth. When it is transmitted by a FM radio station, it is often carried by a frequency in the range of tens of megahertz to hundreds of megahertz. Usually a radio is categorized by its carrier frequency, such as 900 MHz radio or 5 GHz radio. In general, the higher the carrier frequency, the better the directivity, but the more difficult the radio design.

RF CMOS Power Amplifiers: Theory, Design and Implementation

RF CMOS Power Amplifiers: Theory, Design and Implementation PDF Author: Mona M. Hella
Publisher: Springer Science & Business Media
ISBN: 0306473208
Category : Technology & Engineering
Languages : en
Pages : 107

Book Description
RF CMOS Power Amplifiers: Theory Design and Implementation focuses on the design procedure and the testing issues of CMOS RF power amplifiers. This is the first monograph addressing RF CMOS power amplifier design for emerging wireless standards. The focus on power amplifiers for short is distance wireless personal and local area networks (PAN and LAN), however the design techniques are also applicable to emerging wide area networks (WAN) infrastructure using micro or pico cell networks. The book discusses CMOS power amplifier design principles and theory and describes the architectures and tardeoffs in designing linear and nonlinear power amplifiers. It then details design examples of RF CMOS power amplifiers for short distance wireless applications (e, g., Bluetooth, WLAN) including designs for multi-standard platforms. Design aspects of RF circuits in deep submicron CMOS are also discussed. RF CMOS Power Amplifiers: Theory Design and Implementation serves as a reference for RF IC design engineers and RD and R&D managers in industry, and for graduate students conducting research in wireless semiconductor IC design in general and with CMOS technology in particular.

High Efficiency CMOS Power Amplifiers for Drain Modulation Based RF Transmitters

High Efficiency CMOS Power Amplifiers for Drain Modulation Based RF Transmitters PDF Author: Mohammad Reza Ghajar
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description


Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets

Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets PDF Author: Laurent Leyssenne
Publisher: Springer Science & Business Media
ISBN: 9400704259
Category : Technology & Engineering
Languages : en
Pages : 180

Book Description
Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets is intended to designers and researchers who have to tackle the efficiency/linearity trade-off in modern RF transmitters so as to extend their battery lifetime. High data rate 3G/4G standards feature broad channel bandwidths, high dynamic range and critical envelope variations which generally forces the power amplifier (PA) to operate in a low efficiency “backed-off” regime. Classic efficiency enhancement techniques such as Envelope Elimination and Restoration reveal to be little compliant with handset-dedicated PA implementation due to their channel-bandwidth-limited behavior and their increased die area consumption and/or bill-of-material. The architectural advances that are proposed in this book circumvent these issues since they put the stress on low die-area /low power-consumption control circuitry. The advantages of silicon over III/V technologies are highlighted by several analogue signal processing techniques that can be implemented on-chip with a power amplifier. System-level and transistor-level simulations are combined to illustrate the principles of the proposed power adaptive solutions. Measurement on BICMOS demonstrators allows validating the functionality of dynamic linearity/efficiency management. In Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets, PA designers will find a review of technologies, architectures and theoretical formalisms (Volterra series...) that are traditionally related to PA design. Specific issues that one encounters in power amplifiers (such as thermal / memory effects, stability, VSWR sensitivity...) and the way of overcoming them are also extensively considered throughout this book.

CMOS Radio-frequency Power Amplifiers for Multi-standard Wireless Communications

CMOS Radio-frequency Power Amplifiers for Multi-standard Wireless Communications PDF Author: Hyungwook Kim
Publisher:
ISBN:
Category : Metal oxide semiconductors, Complementary
Languages : en
Pages :

Book Description
The development of multi-standard wireless communication systems with low cost and high integration is continuously requested and accompanied by the explosive growth of the wireless communication market. Although CMOS technology can provide most building blocks in RF transceivers, the implementation of CMOS RF power amplifiers is still a challenging task. The objective of this research is to develop design techniques to implement fully-integrated multi-mode power amplifiers using CMOS technology. In this dissertation, a load modulation technique with tunable matching networks and a pre-distortion technique in a multi-stage PA are proposed to support multi-communication standards with a single PA. A fully-integrated dual-mode GSM/EDGE PA was designed and implemented in a 0.18 um CMOS technology to achieve high output power for the GSM application and high linearity for the EDGE application. With the suggested power amplifier design techniques, fully-integrated PAs have been successfully demonstrated in GSM and EDGE applications. In Addition to the proposed techniques, a body-switched cascode PA core is also proposed to utilize a single PA in multi-mode applications without hurting the performance. With the proposed techniques, a fully-integrated multi-mode PA has been implemented in a 0.18 um CMOS technology, and the power amplifier has been demonstrated successfully for GSM/EDGE/WCDMA applications. In conclusion, the research in this dissertation provides CMOS RF power amplifier solutions for multiple standards in mobile wireless communications with low cost and high integration.

Highly Efficient CMOS Power Amplifiers at C- and S-Band for Low Supply Voltages

Highly Efficient CMOS Power Amplifiers at C- and S-Band for Low Supply Voltages PDF Author: Jörg Carls
Publisher: Jörg Vogt Verlag
ISBN: 3938860243
Category :
Languages : en
Pages : 162

Book Description