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Author: Wên-tsuan Chʻên Publisher: ISBN: Category : Gunn effect Languages : en Pages : 306
Book Description
The electronic characteristics of a quenched mode Gunn effect oscillator has been studied both theoretically and experimentally. The theoretical work is based on a large signal analysis and a computer program is used to simulate the Gunn diode in a resonant circuit to predict the domain dynamics, the i-v characteristics and the overall electrical behavior of a quenched mode Gunn oscillator. Good agreement of this theory with many experimental observations is shown. A simple method for measuring the i-v characteristics and electronic admittance of an oscillating Gunn diode operating in a quenched mode is described. A P-shape i-v characteristic and admittance measurements show that the diode equivalent circuit is a series combination of a negative conductance in shunt with a capacitive susceptance and the impedance of the low-field region. The microwave performance of a quenched mode Gunn oscillator and the effect on this performance of varying the bias voltage and the external circuit loads have been investigated experimentally and the results are presented. (Author).
Author: Wên-tsuan Chʻên Publisher: ISBN: Category : Gunn effect Languages : en Pages : 306
Book Description
The electronic characteristics of a quenched mode Gunn effect oscillator has been studied both theoretically and experimentally. The theoretical work is based on a large signal analysis and a computer program is used to simulate the Gunn diode in a resonant circuit to predict the domain dynamics, the i-v characteristics and the overall electrical behavior of a quenched mode Gunn oscillator. Good agreement of this theory with many experimental observations is shown. A simple method for measuring the i-v characteristics and electronic admittance of an oscillating Gunn diode operating in a quenched mode is described. A P-shape i-v characteristic and admittance measurements show that the diode equivalent circuit is a series combination of a negative conductance in shunt with a capacitive susceptance and the impedance of the low-field region. The microwave performance of a quenched mode Gunn oscillator and the effect on this performance of varying the bias voltage and the external circuit loads have been investigated experimentally and the results are presented. (Author).
Author: Juras Pozhela Publisher: Elsevier ISBN: 1483189384 Category : Science Languages : en Pages : 319
Book Description
Plasma and Current Instabilities in Semiconductors details the main ideas in the physics of plasma and current instabilities in semiconductors. The title first covers plasma in semiconductors, and then proceeds to tackling waves in plasma. Next, the selection details wave instabilities in plasma and drift instabilities. The text also discusses hot electrons, along with the instabilities due to inter-valley electron transfer. The next chapters talks about avalanche and recombination instabilities. The last chapter deals with plasma streams. The book will be of great use to student and professional electronics engineers and technicians.
Author: Halid Bikkin Publisher: Walter de Gruyter GmbH & Co KG ISBN: 3110373009 Category : Science Languages : en Pages : 425
Book Description
This graduate textbook covers contemporary directions of non-equilibrium statistical mechanics as well as classical methods of kinetics. Starting from phenomenological non-equilibrium thermodynamics, the kinetic equation method discussed and demonstrated with electrons and phonons in conducting crystals. Linear response theory as well as the non-equilibrium statistical operator and the master equation approach are discussed in the course of the book. With one of the main propositions being to avoid terms such as "obviously" and "it is easy to show", this treatise is an easy-to-read introduction into this traditional, yet vibrant field. Problems and their well-documented solutions included at appropriate points of the narrative allow the reader to actively develop essential parts of the theory himself. From the content: Phenomenological thermodynamics of irreversible processes Brownian motion Kinetic equations in non-equilibrium thermodynamics Kinetic equation for electrons and phonons in conducting crystals Theory of non-linear response to an external mechanical pertubation Non-equilibrium statistical operator method Response of a highly non-equilibrium system to a weakly measuring field Master equation approach
Author: Herbert Kroemer Publisher: World Scientific ISBN: 9812709010 Category : Technology & Engineering Languages : en Pages : 385
Book Description
Information technology has changed our society radically. Just as the integrated circuits have been the prime mover for electronics, high-speed transistors and semiconductor lasers based on heterostructures are now playing the same role in modern telecommunications. Professor Kroemer's conceptual work on heterostructures began in the early 1950s as he was looking for a way to improve transistor speed and performance. In the 1960s, he applied the same principles to the development of lasers and light-emitting diodes, showing that they could achieve continuous operation at room temperature ? something thought impossible at that time. His deep fundamental scientific work has had a profound effect on technology and society, transforming and improving our lives.This reprint collection brings together Professor Kroemer's most important papers, presenting a comprehensive perspective of the field. It covers topics ranging from substrate materials, electronic properties, process technology, and devices, to circuits and applications. This reprint collection will help the reader identify the key stages in the development of heterostructure devices and lasers from early research through to its integration in current manufacturing. Devoted to R&D engineers and scientists who are actively involved in extending the nano- and microelectronics roadmap mainly via heterostructure engineering, this volume may also serve as a reference for postgraduate and research students.
Author: L. W. Turner Publisher: Butterworth-Heinemann ISBN: 1483161277 Category : Technology & Engineering Languages : en Pages : 1492
Book Description
Electronics Engineer's Reference Book, 4th Edition is a reference book for electronic engineers that reviews the knowledge and techniques in electronics engineering and covers topics ranging from basics to materials and components, devices, circuits, measurements, and applications. This edition is comprised of 27 chapters; the first of which presents general information on electronics engineering, including terminology, mathematical equations, mathematical signs and symbols, and Greek alphabet and symbols. Attention then turns to the history of electronics; electromagnetic and nuclear radiation; the influence of the ionosphere and the troposphere on the propagation of radio waves; and basic electronic circuits. The reader is also introduced to devices such as electron valves and tubes, integrated circuits, and solid-state devices. The remaining chapters focus on other areas of electronics engineering, including sound and video recording; electronic music and radio astronomy; and applications of electronics in weather forecasting, space exploration, and education. This book will be of value to electronics engineers and professionals in other engineering disciplines, as well as to scientists, students, management personnel, educators, and readers with a general interest in electronics and their applications.
Author: Karl W. Böer Publisher: Springer Science & Business Media ISBN: 3642034403 Category : Science Languages : en Pages : 130
Book Description
This book describes the basic principles that relate to field and current inhomogeneities in semiconductors and their kinetics that occur in the regime of negative differential conductances of semiconductors.
Author: Marius Bazu Publisher: John Wiley & Sons ISBN: 1119990009 Category : Technology & Engineering Languages : en Pages : 372
Book Description
Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.
Author: Wên-tsuan Chʻên
Author: Wên-tsuan Chʻên
Author: Juras Pozhela
Author: International Gallium Arsenide Symposium, 2nd, Dallas, 1968
Author: C. I. Pedersen
Author: Halid Bikkin
Author: Herbert Kroemer
Author: 
Author: L. W. Turner
Author: Karl W. Böer
Author: Marius Bazu