Gunn-effect Electronics PDF Download

Author: B. G. Bosch
Publisher: John Wiley & Sons
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 456

View

Book Description

Author: Berthold G. Bosch
Publisher:
ISBN:
Category : Gunn effect
Languages : de
Pages : 90

View

Book Description

Author: Hans Hartnagel
Publisher: Heinemann Educational Publishers
ISBN:
Category : Gunn effect
Languages : en
Pages : 160

View

Book Description

Author: Melvin Shaw
Publisher: Elsevier
ISBN: 0323141552
Category : Technology & Engineering
Languages : en
Pages : 269

View

Book Description
The Gunn-Hilsum Effect covers the physical principles controlling the operation of transferred electron devices. These devices have been proven quite useful in the generation, amplification, and processing of microwave signals well into tens of gigahertz range. Organized into seven chapters, the book focuses on the analytical and numerical approaches of the two vital aspects of device behavior for a given bulk semiconductor: boundary conditions or contacts and the local circuit environment. The opening chapter of this book discusses the negative differential mobility (NDM) characteristics for a range of electric fields in the velocity-field relation of specific semiconductors and the response of such a sample to a charge fluctuation, leading to the growth of stationary and/or traveling high electric field domains. The next two chapters describe how the boundary conditions and the circuit control the manifestation of current instabilities in such systems and how this control can be understood in a simple manner. Chapters 4 and 5 discuss the numerical and experimental investigations of comparatively long bulk samples, with an emphasis on the essential NDM semiconductor n-GaAs. These chapters also examine the production of different current-voltage relationships and instabilities by cathode contacts and the control of the oscillatory characteristics of an electrically unstable sample by different circuit conditions. Chapter 6 presents both time-independent and time-dependent computations, with the latter focusing on the small-signal impedance and stability aspects. The last chapter of this book addresses the construction and evaluation of typical short devices, describes how their oscillatory characteristics compare with the long samples studied in the first six chapters, and discusses the use of short devices as amplifiers. This book is an ideal source for device engineers and designers wishing to apply transferred electron devices in creative ways.

Author: G. S. Hobson
Publisher: Oxford University Press, USA
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 152

View

Book Description

Author: Michael S. Shur
Publisher: Springer Science & Business Media
ISBN: 1489919899
Category : Technology & Engineering
Languages : en
Pages : 677

View

Book Description
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Author: P. J. Bulman
Publisher:
ISBN: 9780121408503
Category : Electronic equipment: Gunn effect diodes
Languages : en
Pages : 402

View

Book Description

Author: Wên-tsuan Chʻên
Publisher:
ISBN:
Category : Gunn effect
Languages : en
Pages : 306

View

Book Description
The electronic characteristics of a quenched mode Gunn effect oscillator has been studied both theoretically and experimentally. The theoretical work is based on a large signal analysis and a computer program is used to simulate the Gunn diode in a resonant circuit to predict the domain dynamics, the i-v characteristics and the overall electrical behavior of a quenched mode Gunn oscillator. Good agreement of this theory with many experimental observations is shown. A simple method for measuring the i-v characteristics and electronic admittance of an oscillating Gunn diode operating in a quenched mode is described. A P-shape i-v characteristic and admittance measurements show that the diode equivalent circuit is a series combination of a negative conductance in shunt with a capacitive susceptance and the impedance of the low-field region. The microwave performance of a quenched mode Gunn oscillator and the effect on this performance of varying the bias voltage and the external circuit loads have been investigated experimentally and the results are presented. (Author).

Author: Seid Hossein Izadpanah
Publisher:
ISBN:
Category :
Languages : en
Pages :

View

Book Description

Author: Alois Allen Slepicka
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 78

View

Book Description
The Gunn effect is a recently (1963) observed phenomenon in the electrical properties of certain compound semiconductors. It is characterized by a sudden onset of oscillations in current through the material when a critical value of electric field is exceeded. The oscillations are not greatly affected by external circuit conditions, are at microwave frequencies, and occur as a bulk property at room temperature in gallium arsenide and certain other materials with the proper conduction band structure. The intervalley transfer of electrons in the conduction band from a lower energy high mobility sub-band, to a higher energy low mobility sub-band with the application of an increasing electric field gives rise to a negative differential resistance in the material. It is this mechanism which is accepted as the cause of the instabilities. A brief theoretical explanation is given. The preparation of samples of gallium arsenide is described and discussed. Sample mounting is described, and the results of various tests reported. The value of the effect lies in the ability to directly convert pulse of DC power into microwave power at usable levels and at reasonable efficiencies. (Author).