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Growth of InP-based Materials and Heterostructures Using Metalorganic Vapor Phase Epitaxy for High Frequency Device Applications

Growth of InP-based Materials and Heterostructures Using Metalorganic Vapor Phase Epitaxy for High Frequency Device Applications PDF Author: Kyushik Hong
Publisher:
ISBN:
Category :
Languages : en
Pages : 532

Book Description


Growth of InP-based Materials and Heterostructures Using Metalorganic Vapor Phase Epitaxy for High Frequency Device Applications

Growth of InP-based Materials and Heterostructures Using Metalorganic Vapor Phase Epitaxy for High Frequency Device Applications PDF Author: Kyushik Hong
Publisher:
ISBN:
Category :
Languages : en
Pages : 532

Book Description


Metalorganic Vapor Phase Epitaxy (MOVPE)

Metalorganic Vapor Phase Epitaxy (MOVPE) PDF Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 111931304X
Category : Technology & Engineering
Languages : en
Pages : 586

Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits

InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits PDF Author: Delong Cui
Publisher:
ISBN:
Category :
Languages : en
Pages : 658

Book Description


Metalorganic Vapor Phase Epitaxy (MOVPE)

Metalorganic Vapor Phase Epitaxy (MOVPE) PDF Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582

Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

First International Conference on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

First International Conference on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices PDF Author: Rajendra Singh
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 672

Book Description


Coopertive Research Associateships Tenable at the Naval Research Laboratory, Washington

Coopertive Research Associateships Tenable at the Naval Research Laboratory, Washington PDF Author:
Publisher: National Academies
ISBN:
Category : Engineering
Languages : en
Pages : 320

Book Description


Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702

Book Description


InP-based NPN and PNP Heterojunction Bipolar Transistor Design, Technology, and Characterization for Enhanced High-frequency Power Amplification

InP-based NPN and PNP Heterojunction Bipolar Transistor Design, Technology, and Characterization for Enhanced High-frequency Power Amplification PDF Author: Donald James Sawdai
Publisher:
ISBN:
Category :
Languages : en
Pages : 602

Book Description


International Conference on Indium Phosphide and Related Materials

International Conference on Indium Phosphide and Related Materials PDF Author:
Publisher:
ISBN:
Category : Electrooptical devices
Languages : en
Pages : 478

Book Description


InP-Based Materials and Devices

InP-Based Materials and Devices PDF Author: Osamu Wada
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 616

Book Description
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.