Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning PDF Download

Author: Xiaodong Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 306

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Author: Kristopher Dan Matthews
Publisher:
ISBN:
Category :
Languages : en
Pages : 153

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This thesis work features the exploration of the capabilities and limitations of devices based on MBE (Molecular Beam Epitaxy) grown IIInitride materials under three principal applications: photovoltaics, high electron mobility transistors (HEMTs), and terahertz emitters. InGaN solar cells covering the deep UV to the red ranges of the solar spectrum were fabricated. The increase in indium composition in the alloys to absorb longer wavelengths resulted in considerable leakage and series resistance caused by a combination of surface electron accumulation and electrically active line defects. A combination of thermal annealing, improved ohmic contact metal selection, electrochemical anodization, and grain coarsening resulted in improved performance. Higher sheet densities and sheet current with minimal leakage was obtained in an AlGaN/GaN HEMT by optimizing the design to include a GaN cap as a tunneling barrier and an AlN interbarrier to increase 2DEG confinement. Furthermore, a novel technique using a 325 nm, surface sensitive laser to perform micro-Raman thermal mapping on HEMTs was developed. The technique utilized higher order A1(LO) phonons for higher thermal sensitivity. Lastly, progress was made toward GaN THz emitter development by achieving low series resistance operation through improved metal contact selection and ultra high Ge donor doping via MBE.

Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0080455999
Category : Technology & Engineering
Languages : en
Pages : 648

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Book Description
- This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics - Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field - Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790

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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Author: Erin Christina Hix Kyle
Publisher:
ISBN: 9781339671918
Category :
Languages : en
Pages : 200

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Immense work on the III-nitrides has taken place over the past quarter century. Nevertheless, many properties still remain poorly understood. Further knowledge and improvements of these materials will lead to superior device performance and realization of new device structures. In this work, III-nitrides were grown by molecular beam epitaxy and studied by multiple characterization techniques. Systematic studies examined the effect of different growth conditions on material properties of n-type GaN, p-type GaN and InAlN.

Author: Takashi Matsuoka
Publisher: Springer
ISBN: 3319766414
Category : Technology & Engineering
Languages : en
Pages : 228

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Book Description
This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Author: T. D. Moustakas
Publisher: The Electrochemical Society
ISBN: 9781566771634
Category : Science
Languages : en
Pages : 250

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Author: T. D. Moustakas
Publisher: The Electrochemical Society
ISBN: 9781566772129
Category : Technology & Engineering
Languages : en
Pages : 246

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Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2668

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Book Description

Author: Michael William Moseley
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages :

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Book Description
Since the initial breakthroughs in structural quality and p-type conductivity in GaN during the late 1980s, the group-III nitride material system has attracted an enormous amount of interest because of its properties and applications in both electronics and optoelectronics. Although blue light-emitting diodes have been commercialized based on this success, much less progress has been made in ultraviolet emitters, green emitters, and photovoltaics. This lack of development has been attributed to insufficient structural and electrical material quality, which is directly linked to the growth of the material. The objective of this work is to expand the understanding of III-nitride growth towards the improvement of current device capabilities and the facilitation of novel device designs. :Group-III nitride thin films are grown by molecular-beam epitaxy in a pulsed, metal-rich environment. The growths of nitride binaries and ternaries are observed in situ by transient reflection high-energy electron diffraction (RHEED) intensities, which respond to the behavior of atoms on the growing surface. By analyzing and interpreting these RHEED signatures, a comprehensive understanding of nitride thin film growth is obtained. :The growth kinetics of unintentionally doped GaN by metal-rich MBE are elucidated, and a novel method of in situ growth rate measurement is discovered. This technique is expanded to InN, highlighting the similarity in molecular-beam epitaxy growth kinetics between III-nitride binaries. The growth of Mg-doped GaN is then explored to increase Mg incorporation and electrical activation. The growth of InxGa1-xN alloys are investigated with the goal of eliminating phase separation, which enables single-phase material for use in photovoltaics. Finally, the growth of unintentionally doped and Mg-doped AlGaN is investigated towards higher efficiency light emitting diodes. :These advancements in the understanding of III-nitride growth will address several critical problems and enable devices relying on consistent growth in production, single-phase material, and practical hole concentrations in materials with high carrier activation energies.