Author: Ross UlbrichtPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Growth of EuO Thin Films by Molecular Beam Epitaxy
Author: Ross UlbrichtGrowth of LiTaO3 and LiNbO3 Thin Films by Molecular Beam Epitaxy
Author: Frank GitmansEpitaxy
Author: Marian A. HermanPublisher: Springer Science & Business Media
ISBN: 3662070642
Category : Science
Languages : en
Pages : 530
Book Description
In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.
Molecular Beam Epitaxy Growth and Electrochemical Investigations of La2CuO4 Thin-films
Author: Antoine DaridonGrowth Kinetics of III-V Semiconductor Thin Films by Molecular Beam Epitaxy with Gas Sources
Author: Bingwen LiangGrowth of Transition Metal Dichalcogenide Thin Films by Molecular Beam Epitaxy
Author: 焦璐Growth of Transition Metal Dichalcogenide Thin Films by Molecular Beam Epitaxy
Author: Lu JiaoPublisher: Open Dissertation Press
ISBN: 9781361011959
Category :
Languages : en
Pages :
Book Description
This dissertation, "Growth of Transition Metal Dichalcogenide Thin Films by Molecular Beam Epitaxy" by Lu, Jiao, 焦璐, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Atomically thin transition metal dichalcogenides (TMD) have attracted intensive research interests due to their extraordinary properties and potential applications in electronics and optoelectronics. In this thesis, epitaxial growths of two-dimensional (2D) MoSe2 and WSe2 thin films were carried out in Molecular Beam Epitaxy (MBE). Multiple characterization techniques were employed to investigate thin films' structural, morphological, electronic and optical properties. A series of submonolayer MoSe2 coverage samples have been grown on highly ordered pyrolytic graphite (HOPG) substrate. Growth temperature and post-growth annealing temperature were seen to have obvious impacts on film's morphology and crystal quality. Layer-by-layer growth mode has been identified for the Van der Waals epitaxy of MoSe2 on HOPG. Dense networks of inversion domain boundaries (IDBs) have been observed in as-grown MoSe2 epifilms by scanning tunneling microscopy (STM) and transmission electron microscopy (TEM), and their density can be tuned by changing the MBE conditions. Scanning tunneling spectroscopy (STS) measurements reveal mid-gap electronic states associated with the IDB defects. STS measurements also reveal energy bandgaps of monolayer (ML) and bilayer (BL) MoSe2. ML WSe2 thin films were also grown at varying conditions on HOPG substrates through the Van der Waals epitaxy process and the growth characteristics were found similar to that of MoSe2. However, differences are also noted, particularly about the IDB defects. Contrary to MoSe2, as-grown WSe2 films do not contain the line defects. The reason behind such differences will be discussed. Finally, besides the STM/S studies about the morphological and electronic properties of MBE MoSe2 and WSe2 films, high quality samples have been synthesized on graphene-on-SiC substrate with reduced defect density and well-controlled thicknesses for some ex situ characterizations by photoluminescence and Raman spectroscopy methods. The results will be summarized and discussed in this thesis. Subjects: Molecular beam epitaxy Metallic films
Growth of III-nitride Thin Films and Heterostructures by Gas-source Molecular Beam Epitaxy
Author: Li-Kang LiElucidating the Growth Kinetics of Hybrid Molecular Beam Epitaxy
Author: Benazir Fazlioglu YalcinPublisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Since their discovery, thin films have attracted tremendous attention due to their wide range of application areas. The advancements in thin films and thin film growth allow for the study of various electronic phenomena, including transport properties, magnetic ground states, and structural polarization-linked states such as piezoelectricity, pyroelectricity, and ferroelectricity. The remarkable surge in thin film development is expected to persist, given their pivotal role in driving technological progress. However, achieving high-quality and defect-free thin films, which is essential to unlock the full potential of these materials, remains a challenge, despite the utilization of a wide range of growth techniques. This need for better-quality thin films has driven scientists to explore new growth strategies and study ways to improve thin film growth in general. Here, hybrid Molecular Beam Epitaxy stands out as the strategy that has been shown to provide superior control over cation stoichiometry and thus produce higher-quality materials. The primary aim of this dissertation is to uncover ways to enhance the quality of thin films, specifically focusing on BaTiO3 and SrTiO3. Although these materials have been extensively studied, there is still much to discover to fully exploit their potential. As described in this dissertation, 45 nm thick BaTiO3 thin films grown through hybrid molecular beam epitaxy have shown promising optical constants (refractive index= 2.42 and extinction coefficient=0.056) resembling bulk-like BaTiO3. To gain further insights into the decomposition patterns of the metal-organic substance, titanium(IV) isopropoxide, used in growing titanate perovskite structures (BaTiO3, SrTiO3) via hybrid molecular beam epitaxy systems, reactive force field molecular dynamics simulations were employed. Reaction pathways were extracted, and ways to facilitate the decomposition of titanium(IV) isopropoxide molecules were investigated, along with bond energies to determine the rates ratios of bond dissociation reactions. Additionally, titanium(IV) isopropoxide molecules were simulated on SrTiO3 surfaces in a reactive force field simulation environment to study hybrid molecular beam epitaxy growth kinetics on an atomic scale for the first time. In addition, thermogravimetric analysis was performed on metal-organic substances that have been and can potentially be used in thin film growth. Using benzoic acid as a calibration standard, vapor pressure curves were extracted from thermogravimetric measurements using the Langmuir equation. The resulting data was used to discuss the suitability of these metal-organic precursors in chemical vapor deposition-based thin film growth approaches in general, and hybrid molecular beam epitaxy in particular.
Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy
Author: Nikolai N. LedentsovPublisher: Springer Science & Business Media
ISBN: 9783540657941
Category : Technology & Engineering
Languages : en
Pages : 114
Book Description
The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.