Author: Shou-Chen KaoPublisher:
ISBN:
Category :
Languages : en
Pages : 237
Book Description
Growth Kinetics of SiO(sub 2) and the Ellipsometric Study of SiO(sub 2) Films on Silicon
Author: Shou-Chen KaoThe Growth Rate of SiO(sub 2) Films in Dry Thermal Oxidation and Effects of Annealing Using Ellipsometry
Author: Donald J. DelehantySpectroscopic Ellipsometry
Author: Hiroyuki FujiwaraPublisher: John Wiley & Sons
ISBN: 9780470060186
Category : Technology & Engineering
Languages : en
Pages : 388
Book Description
Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. This book deals with fundamental principles and applications of spectroscopic ellipsometry (SE). Beginning with an overview of SE technologies the text moves on to focus on the data analysis of results obtained from SE, Fundamental data analyses, principles and physical backgrounds and the various materials used in different fields from LSI industry to biotechnology are described. The final chapter describes the latest developments of real-time monitoring and process control which have attracted significant attention in various scientific and industrial fields.
Government Reports Announcements & Index
Author: Structure and Growth Kinetics of Ni 2 Si on Silicon
Author: W. K. ChuINIS Atomindex
Author: Etching of SiO Sub 2 Film by Synchrotron Radiation in Hydrogen and Its Application to Low-Temperature Surface Cleaning
Author: Yasuo NaraPublisher:
ISBN:
Category :
Languages : en
Pages : 4
Book Description
In order to grow silicon films with good crystal quality, it is important to remove oxygen and carbon contaminants on the surface and to obtain clean substrate surface immediately before growth. In conventional surface cleaning process, silicon substrate is heated up to about 1000 deg C and the surface contaminants are evaporated or gas-etched from the substrate surface. However, such high temperature treatment causes the redistribution of impurity atoms in the substrates and it makes difficult to fabricate fine structures. Recently, synchrotron radiation (SR) stimulated evaporation of SiO2 film and its application to surface cleaning at 650 deg C have been reported, and the usefulness of SR induced reactions for low-temperature process is being recognized. In this paper, we report on new SiO2 etching technique by the irradiation of SR in H2 atmosphere and on the application of this process to the pretreatment of Si film deposition. It is revealed that the addition of H2 gas during SR exposure is effective to increase the SiO2 etching rate and to reduce the carbon contamination on the Si substrate at low-temperature of 500 deg C.
Structural and Interfacial Characteristics of Thin ([10 Nm) SiO Sub 2 Films Grown by Electron Cyclotron Resonance Plasma Oxidation on (100) Si Substrates
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
The feasibility of fabricating ultra-thin SiO2 films on the order of a few nanometer thickness has been demonstrated. SiO2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on (100) Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the (100) substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve.
Author: 
Author: A. J. Hydes