Growth and Characterization of Silicon Carbide for MEMS Pressure Sensors PDF Download

Author: Chien Hung Wu (Ph. D.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 424

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Author: Lunet Estefany Luna
Publisher:
ISBN:
Category :
Languages : en
Pages : 109

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Book Description
Silicon carbide (SiC) based electronics and sensors hold promise for pushing past the limits of current technology to achieve small, durable devices that can function in high-temperature, high-voltage, corrosive, and biological environments. SiC is an ideal material for such conditions due to its high mechanical strength, excellent chemical stability, and its biocompatibility. Consequently, SiC thin films and nanowires have attracted interest in applications such as micro- and nano-electromechanical systems, biological sensors, field emission cathodes, and energy storage devices. In terms of high-temperature microdevices, maintaining low-resistance electrical contact between metal and SiC remains a challenge. Although SiC itself maintains structural and electrical stability at high temperatures, the metallization schemes on SiC can suffer from silicide formation and oxidation when exposed to air. The second chapter presents efforts to develop stable metallization schemes to SiC. A stack consisting of Ni-induced solid-state graphitization of SiC and an atomic layer deposited layer of alumina is shown to yield low contact resistivity of Pt/Ti to polycrystalline n-type 3C-SiC films that is stable in air at 450 oC for 500 hours. The subsequent chapters focus on the growth and structural characterization of SiC nanowires. In addition to its structural stability in harsh-environments, there is interest in controlling SiC crystal structure or polytype formation. Over 200 different polytypes have been reported for SiC, with the most common being 3C, 4H, and 2H. In terms of SiC nanowire growth, the 3C or cubic phase is the most prevalent. However, as the stacking fault energy for SiC is on the order of a few meV, it is common to have a high density of stacking faults within a given SiC crystal structure. Thus, to enable reliable performance of SiC nanowires, a growth method that can promote a specific polytype or reduce stacking faults is of importance. Ni-catalyzed chemical vapor deposition method is employed for the growth of the nanowires. The effects of substrate structure and quality as well as the various growth parameters such as temperature, pressure, and post-deposition annealing are investigated. Most significant has been the growth and characterization of vertically aligned hexagonal phase (or 4H-like) SiC nanowires grown on commercially available 4H-SiC (0001). The studies presented in this thesis tackle issues in SiC metallization and nanowire growth in efforts to expand the versatility of SiC as a material platform for novel devices.

Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313550
Category : Technology & Engineering
Languages : en
Pages : 565

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A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Author: Kenneth George Irvine
Publisher:
ISBN:
Category :
Languages : en
Pages : 170

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Author: Mariana Amorim Fraga
Publisher:
ISBN: 9781613247747
Category : Amorphous semiconductors
Languages : en
Pages : 0

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Book Description
Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.

Author: Muthu Wijesundara
Publisher: Springer Science & Business Media
ISBN: 1441971211
Category : Technology & Engineering
Languages : en
Pages : 247

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Book Description
Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods towards system level integration of components and key challenges are evaluated and discussed based on the current state of SiC materials processing and device technology. Issues such as temperature mismatch, process compatibility and temperature stability of individual components and how these issues manifest when building the system receive thorough investigation. The material covered not only reviews the state-of-the-art MEMS devices, provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules.

Author: Peter Friedrichs
Publisher: John Wiley & Sons
ISBN: 3527629068
Category : Science
Languages : en
Pages : 528

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Book Description
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Author: Peter Friedrichs
Publisher: Wiley-VCH
ISBN: 9783527409532
Category : Science
Languages : en
Pages : 528

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Book Description
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Author: Kenneth George Irvine
Publisher:
ISBN:
Category :
Languages : en
Pages : 170

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Author: Hoang-Phuong Phan
Publisher: Springer
ISBN: 3319555448
Category : Technology & Engineering
Languages : en
Pages : 156

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Book Description
This book addresses the piezoresistance in p-type 3C-SiC, which it investigates using experimental characterization and theoretical analysis. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nanocrystalline SiC, along with the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also discussed. Silicon carbide (SiC) is an excellent material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical properties and extreme chemical inertness. Among the numerous polytypes of SiC, the cubic single crystal, which is also well known as 3C-SiC, is the most promising platform for microelectromechanical (MEMS) applications, as it can be epitaxially grown on an Si substrate with diameters of up to several hundred millimeters. This feature makes 3C-SiC compatible with the conventional Si-based micro/nano processing and also cuts down the cost of SiC wafers. The investigation into the piezoresistive effect in 3C-SiC is of significant interest for the development of mechanical transducers such as pressure sensors and strain sensors used for controlling combustion and deep well drilling. Although a number of studies have focused on the piezoresistive effect in n-type 3C-SiC, 4H-SiC and 6H-SiC, comparatively little attention has been paid to piezoresistance in p-type 3C-SiC. In addition, the book investigates the piezoresistive effect of top-down fabricated SiC nanowires, revealing a high degree of sensitivity in nanowires employing an innovative nano strain-amplifier. The large gauge factors of the p-type 3C-SiC at both room temperature and high temperatures found here indicate that this polytype could be suitable for the development of mechanical sensing devices operating in harsh environments with high temperatures.