Author: Bobby Lee PittsPublisher:
ISBN:
Category :
Languages : en
Pages : 324
Book Description
Growth and Characterization of GaInAsP on GaAs Using Flow Modulation Epitaxy
Author: Bobby Lee PittsThe Growth and Characterization of GaAs, AlGaAs and Their Heterostructures by Organometallic Vapor Phase Epitaxy
Author: James Richard ShealyPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 548
Book Description
OMVPE Synthesis and Characterization of Heterostructures Containing Arsenide/phosphide Interfaces
Author: David Todd EmersonPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 808
Book Description
The MOCVD Challenge
Author: Manijeh RazeghiPublisher: CRC Press
ISBN: 1482289385
Category : Science
Languages : en
Pages : 460
Book Description
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering
Advances in the OMVPE Growth of InGaP/GaAs(P) Heterostructures for Optical and Electronic Devices
Author: Keith Laurence WhittinghamPublisher:
ISBN:
Category :
Languages : en
Pages : 548
Book Description
Epitaxial Growth and Characterization of GaAs-based Type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum Well Heterostructures and Lasers
Author: Christian FuchsGrowth and Characterization of GaAs/Ge Epilayers Grown on Si Substrates by Molecular Beam Epitaxy
Author: Peter SheldonPublisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 256
Book Description
Successful Molecular Beam Epitaxy Growth and Characterization of (110) GaAs/GaAs and (110) AlGaAs/GaAs
Author: Lisa Parechanian AllenPublisher:
ISBN:
Category :
Languages : en
Pages : 224
Book Description
American Doctoral Dissertations
Author: Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 800
Book Description
Epitaxial Growth and Characterization of GaAs on Spinel
Author: Chih-Chun WangPublisher:
ISBN:
Category :
Languages : en
Pages : 119
Book Description
Research on the epitaxial growth and characterization of GaAs on magnesium aluminate spinel has been carried out. Single crystal GaAs films (unintentionally doped) with thicknesses up to 70 micrometers have been grown on a spinel substrate using the vapor phase reaction between (CH3)3Ga and AsH3. The effect of growth conditions on the layer characteristics has been studied in order to achieve optimization of the film properties. Growth parameters studied include substrate orientation, substrate surface preparation, growth temperature, gas flow conditions, reactor geometry, and source material purification. The purity of the source material has been found to play a critically important role in determining both the crystallinity and the electrical properties of the films. Films with electron and hold mobilities up to, respectively, 4000 and 300 sq cm/V-sec have been prepared. Epitaxial growth of GaAs on GaAs/spinel composite using vapor phase and liquid phase techniques was explored with encouraging results. The epitaxial GaAs-spinel composites have been characterized by x-ray diffraction, electron diffraction, electron microscopy, and optical techniques. Information on the crystalline perfection, epitaxial orientation relationships, surface structures, and optical constants has been obtained. The overall single crystalline GaAs deposits are composed of crystallites which are misoriented by plus or minus 0.1 degree from the nominal orientation of the layer. The stress in the epitaxial GaAs was determined to be 1x10 to the 9th power dyne/sq cm. (Author).