Author: Ramakrishnan BashyamPublisher:
ISBN:
Category :
Languages : en
Pages : 318
Book Description
Growth and Characterization of Diamond Films Fabricated Using Hot Filament Chemical Vapor Desposition
Author: Ramakrishnan BashyamPublisher:
ISBN:
Category :
Languages : en
Pages : 318
Book Description
Growth and Characterization of Diamond Thin Films
Author: Sattar MirzakuchakiPublisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 272
Book Description
Chemical vapor deposited (CVD) diamond thin films grown homoepitaxially as well as on non-diamond substrates have been the subject of intense investigation since the beginning of the last decade. Diamond's remarkable properties such as physical hardness, chemical inertness, high thermal conductivity, high breakdown voltage, and high carrier mobility are the main factors for the attention it has received from many researchers around the world. Although these properties are somewhat degraded in polycrystalline diamond films, they are still superior to many other materials. One of the most potentially useful applications of diamond thin films is in the semiconductor industry. Although a few prototype devices such as field effect transistors and Schottky diodes have been fabricated on diamond, some major obstacles remain to be overcome before full scale commercial applications of diamond as a semiconductor is possible. The high cost of large area monocrystalline diamond substrates has forced researchers to look for alternative substrates for the heteroepitaxial growth of diamond. So far only marginal results have been reported on the growth of highly oriented diamond films and on the heteroepitaxial growth involving substrates that are as costly as diamond. Silicon, as the dominant material in semiconductor industry, has been the subject of much research as a substrate for the growth of polycrystalline diamond. Another problem in development of diamond as a semiconductor is the effective doping of diamond, particularly for n-type conductivity. Although many researchers have studied boron-doped (p-type) diamond thin films in the past several years, there have been few reports on the effects of doping diamond films with phosphorous (n-type). Once these two issues have been solved, other fabrication steps such as oxidation, etching, masking, etc. may be attempted. The present work is a study directed toward solving some of these problems by looking at in-situ doping of n-type hot filament CVD (HFCVD) grown diamond films on silicon substrates. The study includes electrical characterization, stable metallic contacts, effect of silicon substrate surface pretreatment, and selective area deposition. A number of different techniques for inducing diamond nucleation on Si substrates are studied and the resulting diamond films characterized by common techniques such as Raman spectroscopy, X-ray diffraction, optical and scanning electron microscopy, and profilometery. The effect of doping the diamond films with different concentrations of phosphorous as well as calculation of the activation energy by temperature measurement was also carried out in this work. A new technique is presented for the selective deposition of diamond films onto silicon substrates.
Growth and Characterization of Diamond and Diamond-like Films by Filament-assisted Chemical Vapor Deposition
Author: Yijian JinSynthesis and Characterization of Diamond Films Grown by the Hot Filament Chemical Vapor Deposition Technique
Author: Quan YouPublisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 336
Book Description
Hot Filament Assisted Chemical Vapor Deposition and Characterization of Diamond Films
Author: Suzette Renae BurckhardPublisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
Diamond Films
Author: Koji KobashiPublisher: Elsevier
ISBN: 0080525571
Category : Science
Languages : en
Pages : 350
Book Description
Discusses the most advanced techniques for diamond growth Assists diamond researchers in deciding on the most suitable process conditions Inspires readers to devise new CVD (chemical vapor deposition Ever since the early 1980s, and the discovery of the vapour growth methods of diamond film, heteroexpitaxial growth has become one of the most important and heavily discussed topics amongst the diamond research community. Kobashi has documented such discussions with a strong focus on how diamond films can be best utilised as an industrial material, working from the premise that crystal diamond films can be made by chemical vapour disposition. Kobashi provides information on the process and characterization technologies of oriented and heteroepitaxial growth of diamond films.
Growth and Characterization of Phosphorus-doped Diamond Films
Author: Rajat RoychoudhuryPublisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 126
Book Description
Diamond is one of the most technologically and scientifically valuable crystalline solids due to its extraordinary thermal, mechanical, optical, chemical and radiation resistant properties. This uniqueness makes diamond materials of great interest in the field of microelectronics. However, progress in this area has been limited because of difficulties associated with doping, uniformity of polycrystalline films, patterning and inconsistency in reproducibility. For application in electronics, both p- and n-type doping of diamond films must be realized. Both natural and synthetic p-type diamond exists, and boron doping of diamond films (for p-type conductivity) is readily obtainable during chemical vapor deposition. Devices such as field effect transistors and Schottky diodes have been fabricated from such films. However, the development of diamond-based electronic devices has been hindered by the inability to produce reasonably conductive n-type diamond. In this study, we have investigated in situ phosphorus doping of diamond films to obtain n-type conducting diamond films. The diamond films were obtained through hot-filament chemical vapor deposition. The films were identified as good quality polycrystalline diamond through X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The n-type dopant incorporation was established through Secondary Ion Mass Spectroscopy. Both lightly doped (resistive) and heavily doped (well conducting) n-type diamond films were obtained, and their electrical properties were established through Current-Voltage characteristics. The diamond interface characteristics with silicon substrate and metal contacts were studied through Voltage Contrast and Electron Beam Induced Current techniques. Devices such as Schottky diodes were fabricated from these phosphorus doped diamond films. These diamond films were found to be reproducible and their electrical characteristics repeatable, thus, setting a trend towards solving one of the main problems in realizing diamond as a material for the future in the semiconductor industry.
Diamond Films Handbook
Author: Jes AsmussenPublisher: CRC Press
ISBN: 9780203910603
Category : Science
Languages : en
Pages : 692
Book Description
The Diamond Films Handbook is an important source of information for readers involved in the new diamond film technology, emphasizing synthesis technologies and diamond film applications. Containing over 1600 references, drawings, photographs, micrographs, equations, and tables, and contributions by experts from both industry and academia, it inclu
Diamond Based-Materials
Author: Qiang HuPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The studies covered in this dissertation concentrate on the various forms of diamond films synthesized by chemical vapor deposition (CVD) method, including microwave CVD and hot filament CVD. According to crystallinity and grain size, a variety of diamond forms primarily including microcrystalline (most commonly referred to as polycrystalline) and nanocrystalline diamond films, diamond-like carbon (DLC) films were successfully synthesized. The as-grown diamond films were optimized by changing deposition pressure, volume of reactant gas hydrogen (H2) and carrier gas argon (Ar) in order to get high-quality diamond films with a smooth surface, low roughness, preferred growth orientation and high sp3 bond contents, etc. The characterization of diamond films was carried out by metrological and analytical techniques such as scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and Raman spectroscopy. The results of characterization served as feedback to optimize experimental parameters, so as to improve the quality of diamond films. A good understanding of the diamond film properties such as mechanical, electrical, optical and biological properties, which are determined by the qualities of diamond films, is necessary for the selection of diamond films for different applications. The nanocrystalline diamond nanowires grown by a combination of vapor-liquid-solid (VLS) method and CVD method in two stages, and the graphene grown on silicon substrate with nickel catalytic thin film by single CVD method were also investigated in a touch-on level.
Author: Zhiyong Xie