Author: Yee-Chia YeoPublisher:
ISBN:
Category :
Languages : en
Pages : 358
Book Description
Gate-stack and Channel Engineering for Advanced CMOS Technology
Author: Yee-Chia YeoAdvanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS
Author: Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 658
Book Description
Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2
Author: Fred RoozeboomPublisher: The Electrochemical Society
ISBN: 1566775027
Category : Gate array circuits
Languages : en
Pages : 472
Book Description
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment
Author: P. J. TimansPublisher: The Electrochemical Society
ISBN: 1566776260
Category : Gate array circuits
Languages : en
Pages : 488
Book Description
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment
Author: V. NarayananPublisher: The Electrochemical Society
ISBN: 1566777097
Category : Gate array circuits
Languages : en
Pages : 367
Book Description
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment
Author: E. P. GusevPublisher: The Electrochemical Society
ISBN: 1566777917
Category : Science
Languages : en
Pages : 426
Book Description
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
High-k Gate Dielectrics for CMOS Technology
Author: Gang HePublisher: John Wiley & Sons
ISBN: 3527646361
Category : Technology & Engineering
Languages : en
Pages : 560
Book Description
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Technology Evolution for Silicon Nano-Electronics
Author: Seiichi MiyazakiPublisher: Trans Tech Publications Ltd
ISBN: 3038134945
Category : Technology & Engineering
Languages : en
Pages : 245
Book Description
Selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan
Chimie en microélectronique
Author: LE TIEC YannickPublisher: Lavoisier
ISBN: 2746289180
Category : Chemical detectors
Languages : en
Pages : 386
Book Description
La microélectronique est un monde complexe dans lequel plusieurs sciences comme la physique, l’électronique, l’optique ou la mécanique, contribuent à créer des nano-objets fonctionnels. La chimie est particulièrement impliquée dans de nombreux domaines tels que la synthèse des matériaux, la pureté des fluides, des gaz, des sels, le suivi des réactions chimiques et de leurs équilibres ainsi que la préparation de surfaces optimisées et la gravure sélective de couches spécifiques. Au cours des dernières décennies, la taille des transistors s’est considérablement réduite et la fonctionnalité des circuits électroniques s’est accrue. Cette évolution a conduit à une interpénétration de la chimie et de la microélectronique exposée dans cet ouvrage. Chimie en microélectronique présente les chimies et les séquences utilisées lors des procédés de production de la microélectronique, des nettoyages jusqu’aux gravures des plaquettes de silicium, du rôle et de l’impact de leur niveau de pureté jusqu’aux procédés d’interconnexion des millions de transistors composant un circuit électronique. Afin d’illustrer la convergence avec le domaine de la santé, l’ouvrage expose les nouvelles fonctionnalisations spécifiques, tels que les capteurs biologiques ou les capteurs sur la personne.
Stress and Strain Engineering at Nanoscale in Semiconductor Devices
Author: Chinmay K. MaitiPublisher: CRC Press
ISBN: 1000404935
Category : Science
Languages : en
Pages : 275
Book Description
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.