Fundamentals of III-V Semiconductor MOSFETs PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Fundamentals of III-V Semiconductor MOSFETs PDF full book. Access full book title Fundamentals of III-V Semiconductor MOSFETs by Serge Oktyabrsky. Download full books in PDF and EPUB format.
Author: Serge Oktyabrsky Publisher: Springer Science & Business Media ISBN: 1441915478 Category : Technology & Engineering Languages : en Pages : 451
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: Serge Oktyabrsky Publisher: Springer Science & Business Media ISBN: 1441915478 Category : Technology & Engineering Languages : en Pages : 451
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: Keh Yung Cheng Publisher: Springer Nature ISBN: 3030519031 Category : Technology & Engineering Languages : en Pages : 537
Book Description
This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Author: Shiban Tiku Publisher: CRC Press ISBN: 9814669318 Category : Science Languages : en Pages : 706
Book Description
GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing
Author: Sneh Saurabh Publisher: CRC Press ISBN: 1315350262 Category : Science Languages : en Pages : 216
Book Description
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Author: D. Nirmal Publisher: CRC Press ISBN: 0429862539 Category : Science Languages : en Pages : 430
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Jan Valdman Publisher: BoD – Books on Demand ISBN: 1839682493 Category : Computers Languages : en Pages : 242
Book Description
The general aim of this book is to present selected chapters of the following types: chapters with more focus on modeling with some necessary simulation details and chapters with less focus on modeling but with more simulation details. This book contains eleven chapters divided into two sections: Modeling in Continuum Mechanics and Modeling in Electronics and Engineering. We hope our book entitled "Modeling and Simulation in Engineering - Selected Problems" will serve as a useful reference to students, scientists, and engineers.
Author: Raj, Balwinder Publisher: IGI Global ISBN: 1799864693 Category : Technology & Engineering Languages : en Pages : 263
Book Description
Nanowires are an important sector of circuit design whose applications in very-large-scale integration design (VLSI) have huge impacts for bringing revolutionary advancements in nanoscale devices, circuits, and systems due to improved electronic properties of the nanowires. Nanowires are potential devices for VLSI circuits and system applications and are highly preferred in novel nanoscale devices due to their high mobility and high-driving capacity. Although the knowledge and resources for the fabrication of nanowires is currently limited, it is predicted that, with the advancement of technology, conventional fabrication flow can be used for nanoscale devices, specifically nanowires. Innovative Applications of Nanowires for Circuit Design provides relevant theoretical frameworks that include device physics, modeling, circuit design, and the latest developments in experimental fabrication in the field of nanotechnology. The book covers advanced modeling concepts of nanowires along with their role as a key enabler for innovation in GLSI devices, circuits, and systems. While highlighting topics such as design, simulation, types and applications, and performance analysis of nanowires, this book is ideally intended for engineers, practitioners, stakeholders, academicians, researchers, and students interested in electronics engineering, nanoscience, and nanotechnology.
Author: Publisher: ISBN: Category : Languages : en Pages : 0
Book Description
The application of Al-bearing III-V compound semiconductor native oxides ton Ga As-based metal oxide semiconductor (MOS) electronic devices has been explored. An insulated-gate buried-channel high electron mobility transistor (HEMT) using an AlGaAs native oxide and modulation-doped InGaAs channel has been demonstrated. InAlP native oxides have been shown to have superior electrical properties compared to those of AlGaAs, with insulating quality comparable to that of SiO2 on Si. We have demonstrated the formation of an inversion layer in heterostructure MOS capacitors employing an InAlP native oxide gate insulator. Transmission electron microscopy has been used to examine the oxide/semiconductor interface region. The use of a thin InGaP oxidation barrier layer is shown to improve native oxide uniformity and electrical quality. The InAlP oxide is found to be sufficiently dense to 'cap' and suppress the oxidation of GaAs. X-ray absorption fine-structure spectroscopy (XAFS) and x-ray reflectivity techniques were applied to III-V native oxides using a beamline at the Argonne National Laboratory Advanced Photon Source. Residual As atoms in oxidized AlGaAs films have been found to be coordinated with oxygen in the form of amorphous As oxides. The density profiles of thin surface-oxidized AlGaAs films are obtained by applying a model-independent fitting method to x-ray reflectivity data.
Author: Mark S Lundstrom Publisher: World Scientific Publishing Company ISBN: 981457175X Category : Technology & Engineering Languages : en Pages : 389
Book Description
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Author: Serge Oktyabrsky
Author: Serge Oktyabrsky
Author: Keh Yung Cheng
Author: Andrew M. Greene
Author: Shiban Tiku
Author: Sneh Saurabh
Author: D. Nirmal
Author: Jan Valdman
Author: Raj, Balwinder
Author: 
Author: Mark S Lundstrom