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Author: Gul Bahar Basim Publisher: ISBN: Category : Languages : en Pages :
Book Description
ABSTRACT: Chemical mechanical polishing (CMP) is widely used in the microelectronics industry to achieve planarization and patterning of metal and dielectric layers for microelectronic device manufacturing. Rapid advances in the microelectronics industry demand a decrease in the sizes of the devices, resulting in the requirement of a very thin layer of material removal with atomically flat and clean surface finish by CMP. Furthermore, new materials, such as copper and polymeric dielectrics, are introduced to build faster microprocessors, which are more vulnerable to defect formation and also demand more complicated chemistries. These trends necessitate improved control of the CMP that can be achieved by studying the slurry chemical and particulate properties to gain better fundamental understanding on the process. In this study, the impacts of slurry particle size distribution and stability on pad-particle-surface interactions during polishing are investigated. One of the main problems in CMP is the scratch or pit formation as a result of the presence of larger size particles in the slurries. Therefore, in this investigation, impacts of hard and soft (transient) agglomerates on polishing performance are quantified in terms of the material removal rate and the quality of the surface finish. It is shown that the presence of both types of agglomerates must be avoided in CMP slurries and robust stabilization schemes are needed to prevent the transient agglomerate formation. To stabilize the CMP slurries at extreme pH and ionic strength environments, under applied shear and normal forces, repulsive force barriers provided by the self-assembled surfactant structures at the solid/liquid interface are utilized. A major finding of this work is that slurry stabilization has to be achieved by controlling not only the particle-particle interactions, but also the pad-particle-substrate interactions. Perfect lubrication of surfaces by surfactants prevented polishing. Thus, effective slurry formulations are developed by studying the frictional forces, which are representative of the particle-substrate interactions, while achieving stability by introducing adequate interparticle repulsion. Finally, optimal slurry particulate properties are examined by analyzing the material removal mechanisms for silica-silica polishing. Based on the reported findings, a slurry design criterion is developed to achieve optimal polishing performance.
Author: Gul Bahar Basim Publisher: ISBN: Category : Languages : en Pages :
Book Description
ABSTRACT: Chemical mechanical polishing (CMP) is widely used in the microelectronics industry to achieve planarization and patterning of metal and dielectric layers for microelectronic device manufacturing. Rapid advances in the microelectronics industry demand a decrease in the sizes of the devices, resulting in the requirement of a very thin layer of material removal with atomically flat and clean surface finish by CMP. Furthermore, new materials, such as copper and polymeric dielectrics, are introduced to build faster microprocessors, which are more vulnerable to defect formation and also demand more complicated chemistries. These trends necessitate improved control of the CMP that can be achieved by studying the slurry chemical and particulate properties to gain better fundamental understanding on the process. In this study, the impacts of slurry particle size distribution and stability on pad-particle-surface interactions during polishing are investigated. One of the main problems in CMP is the scratch or pit formation as a result of the presence of larger size particles in the slurries. Therefore, in this investigation, impacts of hard and soft (transient) agglomerates on polishing performance are quantified in terms of the material removal rate and the quality of the surface finish. It is shown that the presence of both types of agglomerates must be avoided in CMP slurries and robust stabilization schemes are needed to prevent the transient agglomerate formation. To stabilize the CMP slurries at extreme pH and ionic strength environments, under applied shear and normal forces, repulsive force barriers provided by the self-assembled surfactant structures at the solid/liquid interface are utilized. A major finding of this work is that slurry stabilization has to be achieved by controlling not only the particle-particle interactions, but also the pad-particle-substrate interactions. Perfect lubrication of surfaces by surfactants prevented polishing. Thus, effective slurry formulations are developed by studying the frictional forces, which are representative of the particle-substrate interactions, while achieving stability by introducing adequate interparticle repulsion. Finally, optimal slurry particulate properties are examined by analyzing the material removal mechanisms for silica-silica polishing. Based on the reported findings, a slurry design criterion is developed to achieve optimal polishing performance.
Author: G. Bahar Basim Publisher: LAP Lambert Academic Publishing ISBN: 9783843363464 Category : Languages : en Pages : 124
Book Description
Chemical mechanical polishing (CMP) is used in microelectronics industry to planarize and pattern metal and dielectric layers. Decrease in the sizes of the devices and introduction of new materials necessitate improved control of the CMP that can be achieved by studying the slurry chemical and particulate properties. In this study, the impacts of slurry particle size distribution and stability on pad-particle-surface interactions are investigated. Impacts of hard and soft (transient) agglomerates on polishing performance are quantified. To stabilize slurries, repulsive force barriers provided by the self-assembled surfactant structures at the solid/liquid interface are utilized. A major finding of this work is that slurry stabilization has to be achieved by controlling not only the particle-particle interactions, but also the pad- particle-substrate interactions. Effective slurry formulations are developed by studying the frictional forces representative of particle- substrate interactions, while achieving stability by introducing adequate interparticle repulsion. Optimal slurry properties are examined and a slurry design criterion is developed.
Author: A. Kumar Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 330
Book Description
Technology requirements associated with the progressive scaling of devices for future technology nodes, coupled with the aggressive introduction of new materials, places tremendous demands on chemical-mechanical polishing. The goal of this 2005 book, which is part of a popular series from MRS, is to bring together experts from a broad spectrum of research and technology groups currently working on CMP, to review advances made, and to offer a comprehensive discussion of future challenges that must be overcome. The book shows trends in the development of consumables, process modules, tool designs, process integration, modeling, defect characterization, and metrology. Topics include: planarization processes and applications; consumables -CMP pads and slurries; CMP equipment and metrology; and CMP modeling and simulation.
Author: Suryadevara V. Babu Publisher: Cambridge University Press ISBN: 9781107412187 Category : Technology & Engineering Languages : en Pages : 306
Book Description
With copper and barrier-layer integration firmly in place, several other exciting developments are occurring in the practice of chemical-mechanical polishing (CMP), and many advances are described in this book, first published in 2001. Discussions on CMP for shallow-trench isolation, abrasive-free slurries, improvements in pad and tool configurations including fixed abrasive pads, 'engineered' particles, effects of nanotopography, end-point studies, defect characterization and novel post-CMP cleaning methods are highlighted. Considerable progress has also been reported in modeling the complicated interactions that occur between the wafer surface and the pad and the slurry, whether containing abrasives or abrasive-free, and their influence on dishing and erosion and nonuniformity. These studies offer valuable insights for process improvements and yet many challenges remain and will provide a high level of interest for future books. Topics include: recent developments - pads and related issues; CMP abrasives; copper CMP/STI and planarization; STI and planarization - wear-rate models; low-k and integration issues - particle and process effects in CMP and issues in CMP cleaning.
Author: Babu Suryadevara Publisher: Woodhead Publishing ISBN: 0128218193 Category : Technology & Engineering Languages : en Pages : 650
Book Description
Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
Author: Publisher: ISBN: Category : Languages : en Pages : 6
Book Description
Chemical-Mechanical Polishing (CMP) has emerged as an enabling technology for manufacturing multi-level metal interconnects used in high-density Integrated Circuits (IC). In this work we present extension of CMP from sub-micron IC manufacturing to fabrication of complex surface-micromachined Micro-ElectroMechanical Systems (MEMS). This planarization technique alleviates processing problems associated with fabrication of multi-level polysilicon structures, eliminates design constraints linked with non-planar topography, and provides an avenue for integrating different process technologies. We discuss the CMP process and present examples of the use of CMP in fabricating MEMS devices such as microengines, pressures sensors, and proof masses for accelerometers along with its use for monolithically integrating MEMS devices with microelectronics.
Author: Gul Bahar Basim
Author: Gul Bahar Basim
Author: G. Bahar Basim
Author: A. Kumar
Author: 
Author: Suryadevara V. Babu
Author: Babu Suryadevara
Author: R. Rhoades
Author: Elon Jahdal Terrell
Author: 
Author: